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1996 Fiscal Year Final Research Report Summary

Study of Carrier Transport Property in Amorphous Semiconductors by Light Excited Hall effect

Research Project

Project/Area Number 07650376
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionOsaka University

Principal Investigator

OKAMOTO Hiroaki  Osaka University, Faculty of Engineering Science, Professor, 基礎工学部, 教授 (90144443)

Co-Investigator(Kenkyū-buntansha) HATTORI Kiminori  Osaka University, Faculty of Engineering Science, Lecturer, 基礎工学部, 講師 (80228486)
Project Period (FY) 1995 – 1996
KeywordsAmorphous Semiconductor / Carrier Transport / Hall Effects / Polarized Electroabsorption / Mobility / Mean Free Path
Research Abstract

Carrier mobility is one of the fundamental physical quantities which largely impact the device performance. In this regard, the knowledge of the carrier mobility is indispensable for the refinements of material processing as well as device design. However, for amorphous semiconductors including amorphous silicon alloys (a-Si) which are of great interest in solar cell field, no simple means have been available for the direct measurement of the "free" carrier mobility, instead it is conventionally deduced from the temperature dependence of the TOF "total charge-carrier" mobility by relying on some specific models. The present work aims to establish a new tool for the determination of free carrier mobility near the band edge by the use of polarized electroaborption and Hall measurements, and to investigate how mobilities are affected by alloying, doping, preparation conditions and/or various treatments after preparation. Upon Phosphorous doping, the electron mobility decreases to about one-third of that in undoped case, while the hole mobility remains almost unchanged. If the long-range potential fluctuation plays a critical role in determining the transport property, then both the electron and hole mobilities should be equally reduced by the incorporation of charged impurities and/or defects, which is, however, in contradiction with our experimental observation. Furthermore, we have found on B doped materials a qualitatively identical behavior of mobilities ; drop in the electron mobility, but no significant reduction in the hole mobility. These findings seem to imply that the doping-induced change in mobilities should not be attributed to classical charge effects, but the incorporation of impurity atoms itself may be of central importance.

  • Research Products

    (14 results)

All Other

All Publications (14 results)

  • [Publications] 岡本博明: "Carrier Mobilities in Amorphous Silicon" Korea-Japan Joint Seminor on Photovoltaics. 1. 43-51 (1995)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 岡本博明: "Phenomenological Scaling of Optical Absorption" J. Non-Cryst. Solids. 198-200. 124-127 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 服部公則: "Modulated Photocurrent Spectroscopy of Defect States" J. Non-Cryst. Solids. 198-200. 288-293 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 清水耕作: "Reversible Photo-Induced Structural Change in a-Si : H" Jpn. J. Appl. Phys.36. 29-32 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Okamoto, K.Hattori and Y.Hamakawa: "Hall Effect near the Mobility Edge" 15th Intern.Conf.on Amorphous Semiconductors -Science & Technology, Cambridge, 1993 ; J.Non-Cryst.Solids. 164-166. 445-448 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Okamoto: "Carrier Mobilities in Amorphous Silicon Alloys" Korea-Japan Joint Seminar on Photovoltaics, Taedok Science Town, Korea. 43-51 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Hattori, M.Anzai, H.Okamoto and Y.Hamakawa: "Distribution of Light-induced Defect States in Undoped Amorphous Silicon" J.Appl.Phys.77. 2989-2992 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Toyama, K.Hiratsuka, H.Okamoto and Y.Hamakawa: "Hot-electron-induced Electro-luminescence and Avalanche Multiplication in Hydrogenated Amorphous Silicon" J.Appl.Phys.77. 6354-6357 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Okamoto, K.Hattori and Y.Hamakawa: "Phenomenological Scaling of Optical Absorption in Amorphous Semiconductors" 16th Intern.Conf.on Amorphous Semiconductors -Science & Technology, Kobe, 1995 ; J.Non-Cryst.Solids. 198-200. 124-127 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Shimizu, T.Shiba, T.Tabuchi and H.Okamoto: "A Study on Reversible Photo-induced Structural Change in a-Si : H by Polarized Electroabsorption" Tech.Digest of the 9th International Photovoltaci Science and Engineering Conference, Miyazaki. 563-564 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Hattori, H.Okamoto and Y.Hamakawa: "Modulated Photocurrent Spectroscopy of Defect States in Undoped a-Si : H" 16th Intern.Conf.on Amorphous Semiconductors -Science & Technology, Kobe, 1995 ; J.Non-Cryst.Solids. 198-200. 288-293 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Wahid Shams-Kolahi, M.Kobayashi, H.Hanzawa, H.Okamoto, S.Endo, Y.Kobayashi and Y.Hamakawa: "Pressure Effects on Electrical and Optical Properties of Si-As-Te Chalcogenaide Glasses Fabricated in the Gravity Environment and in a Microgravity Environment in Space" Jpn.J.Appl.Phys.35. 4713-4717 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Yoyama, T.Matsui, K.Hiratsuka, H.Okamoto and Y.Hamakawa: "Electro-luminescence and Avalanche Multiplication at Electric Fild Strength Exceeding 1 MV/cm in Hydrogenated Amorphous SiC Alloy" Jpn.J.Appl.Phys.35. 5975-5979 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Shimizu, T.Shiba, T.Tabuchi and H.Okamoto: "Reversible Photo-Induced Structural Change in Hydrogenated Amorphous Silicon" Jpn.J.Appl.Phys.36. 29-32 (1997)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1999-03-09  

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