1997 Fiscal Year Final Research Report Summary
Marangoni convection in the melt during crystal growth of compound semiconductor under Microgravity
| Project/Area Number |
08044175
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| Research Category |
Grant-in-Aid for international Scientific Research
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| Allocation Type | Single-year Grants |
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| Section | Joint Research |
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| Research Field |
化学工学一般
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| Research Institution | Waseda University |
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Principal Investigator |
HIRATA Akira Waseda Univ., Dept.of Chem.Eng., Prof., 理工学部, 教授 (00063610)
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| Co-Investigator(Kenkyū-buntansha) |
XINGーRU Zhon 中国科学院, 半導体研究所, 教授
SAKURAI Masato Research Fellow of the Japan Society for the Promotion of Science, 特別研究員
TSUNEDA Satoshi Waseda Univ., Dept.of Chem.Eng., Assistant Prof., 理工学部, 専任講師 (30281645)
HAYAKAWA Yasuhiro Shizuoka Univ., Res.Inst.of Electronics, Associate Prof., 電子工学研究所, 助教授 (00115453)
KUMAGAWA Masashi Shizuoka Univ., Res.Inst.of Electronics, Prof., 電子工学研究所, 教授 (30022130)
ZHONG Xing-Ru Chinese Academy of Sci., Prof.
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| Project Period (FY) |
1996 – 1997
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| Keywords | Microgravity / Single crystal growth / Compound semiconductor / Marangoni convection / Dissolution / Crystal orientation / Optical devices / Recoverable satellite |
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| Research Abstract |
To clarify the dependency of dissolution and growth processes on the crystal orientation, we carried out the In-Ga-Sb crystal growth using GaSb (111) A-InSb-GaSb (111) B sandwich samples under microgravity by the Chinese Recoverable Satellite and also under normal gravity.
The obtained results are ;
(1) GaSb with the (111) B plane dissolved in an In-Sb melt much more than the (111) A plane in both samples,
(2) the re-crystallized zone of InGaSb broadened toward gravitational direction in the sample processed on earth and a larger disolution of GaSb took place as In moved downward the bottom region of In-Ga-Sb solution due to gravity,
(3) the gravitational segregation did not occur in the space sample.
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