1998 Fiscal Year Annual Research Report

ナノ構造の表面・界面の制御と単電子トンネル障壁の最適化

Research Project

Project/Area Number	08247101
Research Category	Grant-in-Aid for Scientific Research on Priority Areas (A)
Research Institution	Hokkaido University
Principal Investigator	長谷川英機北海道大学, 工学研究科, 教授 (60001781)
Co-Investigator(Kenkyū-buntansha)	菅野卓雄東洋大学, 工学部, 教授 (50010707) 安田幸夫名古屋大学, 工学研究科, 教授 (60126951) 澤木宣彦名古屋大学, 工学研究科, 教授 (70023330) 小間篤東京大学, 理学系研究科, 教授 (00010950) 岩見基弘岡山大学, 理学部, 教授 (80029123)
Keywords	単電子デバイス / ナノ構造 / 表面・界面 / トンネル障壁 / 量子ドット / 原子スケール制御
Research Abstract	本研究は、平成8〜11年度にわたり設定された特定領域研究(A)「電子デバイスとその高度集積化の計画研究として、その主要研究項目(A02)「ナノ構造の表面・界面の制御と単電子トンネル障壁の最適化」を担当するものである。本年度における主要な成果を以下にまとめる。 1) ショットキーラップゲートを利用した3ゲート単電子トランジスタを作製し、電圧利得1以上を実現した。また、インプレーンゲート量子細線トランジスタとナノ金属ドットアレーを組み合わせた新しい単電子メモリー素子を提案し、帯電特性の理論的検討と作製プロセスの開発を行った。 2) 超高真空中での熱処理によって、六方晶SiCのSi面およびC面の表面構造を明らかにした。また、六方晶SiC表面にNiを堆積し、600-800℃の超高真空熱処理で、Ni_2Si微粒子の形成に成功した。 3) GaSc,InScなどの層状薄膜上に選択的にC_<60>微粒子を堆積させることに成功した。さらに、水素終端Si上にGaScをファンデアワールスエピタキシー法で成長してチャネルとし、リソグラフィーでGaSeの一部を窓あけし、選択的にC_<60>微粒子を堆積する単電子素子作製プロセスを開発した。 4) シュレジンガー方程式を数値的に解く手法で、ドット構造における電子波のモード形成と不純物散乱の関係を詳細に調べた。また、結合量子井戸中における電子のエネルギー緩和過程をフェムト秒時間分解フォトレフレクタンス法で調べ、LOフォノンを放出する緩和過程、トンネル効果による電子散逸過程等の存在を見いだした 5) SiMOS構造を基本とし、集束Gaイオンビームを利用して3端子素子を作製した。ホッピング伝導に起因するクーロン振動を観測し、クーロンダイアモンド特性より、トンネル障壁幅として14-17nmの値が得られた。 6) Al/Al_2O_3/Al構造の超伝導素子を作製し、単電子デバイスのための基本特性の測定を行った。また、リセス部分にドレイン・ソースを形成したSi単電子デバイスを試作し、室温におけるFET動作を確認した。 7) シランガスパルスプラズマCVD法とEBリソグラフィーを組み合わせて、シリコン微粒子を含む単電子デバイスを作製し、明確なクーロン振動、クーロンブロッケード現象を観測した。また、単電子メモリ効果についても確認した。

Research Products

(51 results)

All Other

All Publications (51 results)

[Publications] H.Hasegawa: "Electrochemical formation and characterization of Schottky in-plane and wrap gate structures for realization of GaAs-and InP-based quantum wires and dots" Applied Surface Science. 123/124. 335 (1998)
[Publications] T.Hashizume: "Surface passivation of GaAs with ultrathin Si_3Ni_4/Si interface control layer formed by MBE and in situ ECR plasma nitridation" Applied Surface Science. 123/124. 599 (1998)
[Publications] H.Takahashi: "Novel InP metal-insulator-semiconductor structure having an ultrathin silicon interface control layer"" Applied Surface Science. 123/124. 615 (1998)
[Publications] B.Adamowicz: "Photoluminescence characterization of air exposed AlGaAs surface and passivated ex situ by ultrathin silicon interface control layer" PhysicaE. 2. 261 (1998)
[Publications] N.Tsurumi: "In-Situ Tunneling Microscope Study of Formation Process of Ultrathin Si Layer by Molecular Beam Epitaxy on GaAs (001)-(2x4) Surface" Japanese Journal of Applied Physics. 37. 1501 (1998)
[Publications] Y.Sato: "Computer Simulation and Experimental Characterization of Single Electron Transistors Based on Schottky Wrap Gate Control of 2DEG" Japanese Journal of Applied Physics. 37. 1584 (1998)
[Publications] H.Fujikura: "Controlled Formation of Narrow and Uniform InP-Based In_<0.53>Ga_<0.47>As Ridge Quantum Wire Arrays by Selective Molecular Beam Epitaxy" Japanese Journal of Applied Physics. 37. 1532 (1998)
[Publications] T.Hashizume: "In-Situ Contactless Characterization of Microscopic and Macroscopic Properties of Si-doped MBE-Grown (2x4) GaAs Surface" Japananese Journal of Applied Physics. 37. 1626 (1998)
[Publications] B.Adamowicz: "Computer Analysis of Surface Recombination Process at Si and Compound Semiconductor Surface and Behavior of Surface Recombination Velocity" Japanese Journal of Applied Physics. 37. 1631 (1998)
[Publications] Y.Hanada: "Direct Formation of InGaAs Coupled Quantum Wire-Dot Structured by Selective Molecular Beam Expitaxy on InP Patterned Substrates" Solid State Electronics. 42. 1413 (1998)
[Publications] H.Okada: "A Novel Wrap-Gate-Controlled Single Electron Transistor Formed on an InGaAs Ridge Quantum Wire Grown by Selective MBE" Solid State Electronics. 42. 1419 (1998)
[Publications] S.Chkraborty: "Formation of ultrathin oxynitride layers on Si (100) by low-temperature electron cyclotron resonance N_2O plasma oxynitridation process" Journal of Vacuum Science and Technology. B16. 2159 (1998)
[Publications] Y.Ishikawa: "Scanning tunneling microscopy and x-ray photoelectron spectroscopy studies of atomic level structure and Fermi level pinning on GaAs (110) surfaces grown by molecular beam epitaxy" Journal of Vacuum Science and Technology. B16. 2387 (1998)
[Publications] Y.Sato: "Voltage Gain in GaAs-Based Lateral Single-Electron Transistors Having Three Schottky Wrap Wrap Gates" Japanese Journal of Applied Physics. 38(in press). (1999)
[Publications] H.Fujikawa: "Control of Dot Size and Tunneling Barrier Profile in In_<0.53>Ga_<0.47>As Coupled Quantum Wire-Dot Structures Grown by Selective Molecular Beam Epitaxy on Patterned InP Substrates" Japanese Journal of Applied Physics. 38(in press). (1999)
[Publications] T.Muranaka: "Size-Controlled Formation of Decananometer InGaAs Quantum Wires by Selective Molecular Beam Epitaxy on InP Patterned Substrates" Japanese Journal of Applied Physics. 38(in press). (1999)
[Publications] H.Fujikura: "Extra-Side-Facet Control in Selective Molecular Beam Epitaxial Growth of InGaAs Ridge Quantum Wires for Improvement of Wire Uniformity" Japanese Journal of Applied Physics. 38(in press). (1999)
[Publications] M.B.Takeyama: "Interfacial Reaction and Electrical Properties in the Sputter-Deposited Al/Ti Ohmic Contact to n-InP" Japanese Journal of Applied Physics. 38(in press). (1999)
[Publications] T.Sato: "Strong Correlation Between Interface Microstructure and Barrier Height in n-InP Schottky Contacts Formed by In Situ Electrochemical Process" Japanese Journal of Applied Physics. 38(in press). (1999)
[Publications] C.Kaneshiro: "Electrochemical Etching of Indium Phosphide Surfaces Studied by Voltammetry and Scanned Probe Microscopes" Japanese Journal of Applied Physics. 38(in press). (1999)
[Publications] H.Takahashi: "XPS and UHV Contactless C-V Characterization of Novel Oxide-Free InP Passivation Process Using Silicon Surface Quantum Well" Japanese Journal of Applied Physics. 38(in press). (1999)
[Publications] H.Fujikura: "Formation of Highly Uniform InGsAs Ridge Quantum Wire by Selective Molecular Beam Epitaxy on Novel InP Patterned Substrates" Thin Solid Film. (in press). (1999)
[Publications] H.Fujikura: "Selective MBE Growth of Quantum Wire-Dot Coupled Structures with Novel High Index Facets for InGaAs Single Electron Transistor Arrays" Microelectronics. (in press). (1999)
[Publications] J.Nakamura: "Transport Properties of Schottky In-Plane-Gate GaAs Single and Coupled Quantum Wire Transistors" IOP conference series. (in press). (1999)
[Publications] N.Ono: "N.Ono. H.Fujikura and H.Hasegawa : “Study of Selective MBE Growth on Patterned (001) InP Substrates Toward Realization of <100>-Oriented InGaAs Ridge Quantum Wires" IOP conference series. (in press). (1999)
[Publications] C.Kaneshiro: "Realization of Strongly Metal-Dependent Schottky Barrier Heights on n-GaAs by In Situ Electrochemical Process" IOP conference series. (in press). (1999)
[Publications] T.Muranaka: "Realization of InP-Based InGaAs Single Electron Transistors on Wires and Dots Grown by Selective MBE" Microelectronic Engineering. (in press). (1999)
[Publications] H.Okada: "GaAs-Based Single Electron Logic and Memory Devices Using Electro-Deposited Nanometer Schottky Gates" Microelectronic Engineering. (in press). (1999)
[Publications] H.Sai: "Growth of Device Quality InGaP/GaAs Heterostructures by Gas Source Molecular Beam Epitaxy using Tertiarybutylphosphine" Solid State Electronics. (in press). (1999)
[Publications] H.Sai: "Study of Reflection Highly-Energy Electron Diffraction Oscillation for Optimization of Tertiarybutylphosphine-Based Molecular Beam Epitaxial Growth of In_<0.48>Ga_<0.52>P on GaAs" Japanese Journal of Applied Physics. 38(in press). (1999)
[Publications] H.Sai: "H.Sai, H.Fujikura and Hasegawa : “Gas Source Molecular Beam Epitaxial Growth of In_<1-x>Ga_xP on GaAs Using Tertiarybutylphosphine" Japanese Journal of Applied Physics. 38(in press). (1999)
[Publications] H.Hasegawa: "Properties of Metal-Semiconductor Interfaces Formed on n-type GaN" Japanese Journal of Applied Physics. 38(in press). (1999)
[Publications] T.Sato: "Formation of Size- and Position-Controlled Nanometer Size Pt Dots on GaAsand InP Substrates by Pulsed electrochemical Depositionc" Japanese Journal of Applied Physics. 38(in press). (1999)
[Publications] T.Yoshida: "A Novel Non-Destructive Characterization Method of Electronic Properties of Pre- and Post-Prosessing Silicon Surfaces Based on Ultrahigh-Vacuum Contactless Capacitance-Voltage Measurements" Japanese Journal of Applied Physics. 38(in press). (1999)
[Publications] M.Mutoh: "Effects of Initial Surface Reconstruction on Silicon Interface Control Layer Based Passivation of (001) GaAs Surfaces Studied in an Ultrahigh-Vacuum Multichamber System" Japanese Journal of Applied Physics. 38(in press). (1999)
[Publications] H.Takahashi: "In-Situ Characterization Technique of Compound Semiconductor Heterostructure Growth and Device Processing Steps Based on UHV Contactless Capacitance-Voltage Measurement" Solid-State Electron.(in press). (1999)
[Publications] Y.Koyama: "Formation Processes and Properties of Schottky and Ohmic Contacts on n-type GaN form Field Effect Transistor Applications" Solid-State Electron.(in press). (1999)
[Publications] A.Hamamatsu: "Formation of <001>-Aligned Nano-Scale Pores on (001)n-InP Surfaces by Photoelectrochemical Anodization in HCl" Journal of Electroanalytical Chemistry. (in press). (1999)
[Publications] J.L.Wang: "Mn (thin-film)/Si(substrate) conacts : Analysis of the buried interface by sofy X-ray emission spectroscopy" Japanese Journal of Applied Physics. 38. 198 (1999)
[Publications] K.Ueno: "A novel method to fabricate a molecular quantum structure : Selective growth of C60 on layered metarial heterostructures" Japanese Journal of Applied Physics. 38. 511 (1999)
[Publications] N.Sawaki: "Electron tunneling time into a quantum disk" Microelectronic Engineering. (in press). (1999)
[Publications] H.Kondo: "Conductance oscillations in low-dimensional ion implanted regions annealead by rapid thermal annealing" Japanese Journal of Applied Physics. 38(in press). (1999)
[Publications] S.Nomura: "Enhancement of photoluminescence near Fermi level in bias voltage controlled quantum dot array" Solid-State Communications. 106. 815 (1998)
[Publications] M.Otobe: "Observation of single electron charging effect in nanocrystalline silicon at room temperature using atomic force microscopy" Applied Physics Letters. 72. 1089 (1998)
[Publications] B.Ullrich: "Optical and Hybrid the Propertiesof the ZnSe/InSe Heterojunctions" Solid State Commun.107. 209 (1998)
[Publications] T.Loher: "Van der Waals Type Buffer Layers : Epitaxial Growth of the Large Lattice Mismatch System CdS/InSe/H-Si (100)" Appl.Sur.Sci.130-132. 334 (1998)
[Publications] Y.Kawaguchi: "Selective area growth of GaN on Si substrates using SiO2 mask by MOVPE" Japanese Journal of Applied Physics. 37. L966 (1998)
[Publications] M.Ishida: "Computer simulation of tunneling transfer and formation of resonant states in a GaAs/AlGaAs 2DEG disk" Japanese Journal of Applied Physics. 38(in press). (1999)
[Publications] H.Iwano: "Hopping conduction and localized states in p-Si wires formed by focused ion beam implantations" Journal of Vacuum Science & Technology B. 16. 2558 (1998)
[Publications] J.P.Bird: "Intrinsic stable orbits in open quantum dots" Semicond.Sci.Technol.13. A4 (1998)
[Publications] K.Ishibashi: "Characterization of SET electrometer coupled to the quantum dot in GaAs/AlGaAs 2DEG" Microelectronics Engineering. (in press). (1999)

1998 Fiscal Year Annual Research Report

ナノ構造の表面・界面の制御と単電子トンネル障壁の最適化

Principal Investigator

長谷川 英機 北海道大学, 工学研究科, 教授 (60001781)

Research Products

[Publications] H.Hasegawa: "Electrochemical formation and characterization of Schottky in-plane and wrap gate structures for realization of GaAs-and InP-based quantum wires and dots" Applied Surface Science. 123/124. 335 (1998)

[Publications] T.Hashizume: "Surface passivation of GaAs with ultrathin Si_3Ni_4/Si interface control layer formed by MBE and in situ ECR plasma nitridation" Applied Surface Science. 123/124. 599 (1998)

[Publications] H.Takahashi: "Novel InP metal-insulator-semiconductor structure having an ultrathin silicon interface control layer"" Applied Surface Science. 123/124. 615 (1998)

[Publications] B.Adamowicz: "Photoluminescence characterization of air exposed AlGaAs surface and passivated ex situ by ultrathin silicon interface control layer" PhysicaE. 2. 261 (1998)

[Publications] N.Tsurumi: "In-Situ Tunneling Microscope Study of Formation Process of Ultrathin Si Layer by Molecular Beam Epitaxy on GaAs (001)-(2x4) Surface" Japanese Journal of Applied Physics. 37. 1501 (1998)

[Publications] Y.Sato: "Computer Simulation and Experimental Characterization of Single Electron Transistors Based on Schottky Wrap Gate Control of 2DEG" Japanese Journal of Applied Physics. 37. 1584 (1998)

[Publications] H.Fujikura: "Controlled Formation of Narrow and Uniform InP-Based In_<0.53>Ga_<0.47>As Ridge Quantum Wire Arrays by Selective Molecular Beam Epitaxy" Japanese Journal of Applied Physics. 37. 1532 (1998)

[Publications] T.Hashizume: "In-Situ Contactless Characterization of Microscopic and Macroscopic Properties of Si-doped MBE-Grown (2x4) GaAs Surface" Japananese Journal of Applied Physics. 37. 1626 (1998)

[Publications] B.Adamowicz: "Computer Analysis of Surface Recombination Process at Si and Compound Semiconductor Surface and Behavior of Surface Recombination Velocity" Japanese Journal of Applied Physics. 37. 1631 (1998)

[Publications] Y.Hanada: "Direct Formation of InGaAs Coupled Quantum Wire-Dot Structured by Selective Molecular Beam Expitaxy on InP Patterned Substrates" Solid State Electronics. 42. 1413 (1998)

[Publications] H.Okada: "A Novel Wrap-Gate-Controlled Single Electron Transistor Formed on an InGaAs Ridge Quantum Wire Grown by Selective MBE" Solid State Electronics. 42. 1419 (1998)

[Publications] S.Chkraborty: "Formation of ultrathin oxynitride layers on Si (100) by low-temperature electron cyclotron resonance N_2O plasma oxynitridation process" Journal of Vacuum Science and Technology. B16. 2159 (1998)

[Publications] Y.Ishikawa: "Scanning tunneling microscopy and x-ray photoelectron spectroscopy studies of atomic level structure and Fermi level pinning on GaAs (110) surfaces grown by molecular beam epitaxy" Journal of Vacuum Science and Technology. B16. 2387 (1998)

[Publications] Y.Sato: "Voltage Gain in GaAs-Based Lateral Single-Electron Transistors Having Three Schottky Wrap Wrap Gates" Japanese Journal of Applied Physics. 38(in press). (1999)

[Publications] H.Fujikawa: "Control of Dot Size and Tunneling Barrier Profile in In_<0.53>Ga_<0.47>As Coupled Quantum Wire-Dot Structures Grown by Selective Molecular Beam Epitaxy on Patterned InP Substrates" Japanese Journal of Applied Physics. 38(in press). (1999)

[Publications] T.Muranaka: "Size-Controlled Formation of Decananometer InGaAs Quantum Wires by Selective Molecular Beam Epitaxy on InP Patterned Substrates" Japanese Journal of Applied Physics. 38(in press). (1999)

[Publications] H.Fujikura: "Extra-Side-Facet Control in Selective Molecular Beam Epitaxial Growth of InGaAs Ridge Quantum Wires for Improvement of Wire Uniformity" Japanese Journal of Applied Physics. 38(in press). (1999)

[Publications] M.B.Takeyama: "Interfacial Reaction and Electrical Properties in the Sputter-Deposited Al/Ti Ohmic Contact to n-InP" Japanese Journal of Applied Physics. 38(in press). (1999)

[Publications] T.Sato: "Strong Correlation Between Interface Microstructure and Barrier Height in n-InP Schottky Contacts Formed by In Situ Electrochemical Process" Japanese Journal of Applied Physics. 38(in press). (1999)

[Publications] C.Kaneshiro: "Electrochemical Etching of Indium Phosphide Surfaces Studied by Voltammetry and Scanned Probe Microscopes" Japanese Journal of Applied Physics. 38(in press). (1999)

[Publications] H.Takahashi: "XPS and UHV Contactless C-V Characterization of Novel Oxide-Free InP Passivation Process Using Silicon Surface Quantum Well" Japanese Journal of Applied Physics. 38(in press). (1999)

[Publications] H.Fujikura: "Formation of Highly Uniform InGsAs Ridge Quantum Wire by Selective Molecular Beam Epitaxy on Novel InP Patterned Substrates" Thin Solid Film. (in press). (1999)

[Publications] H.Fujikura: "Selective MBE Growth of Quantum Wire-Dot Coupled Structures with Novel High Index Facets for InGaAs Single Electron Transistor Arrays" Microelectronics. (in press). (1999)

[Publications] J.Nakamura: "Transport Properties of Schottky In-Plane-Gate GaAs Single and Coupled Quantum Wire Transistors" IOP conference series. (in press). (1999)

[Publications] N.Ono: "N.Ono. H.Fujikura and H.Hasegawa : “Study of Selective MBE Growth on Patterned (001) InP Substrates Toward Realization of <100>-Oriented InGaAs Ridge Quantum Wires" IOP conference series. (in press). (1999)

[Publications] C.Kaneshiro: "Realization of Strongly Metal-Dependent Schottky Barrier Heights on n-GaAs by In Situ Electrochemical Process" IOP conference series. (in press). (1999)

[Publications] T.Muranaka: "Realization of InP-Based InGaAs Single Electron Transistors on Wires and Dots Grown by Selective MBE" Microelectronic Engineering. (in press). (1999)

[Publications] H.Okada: "GaAs-Based Single Electron Logic and Memory Devices Using Electro-Deposited Nanometer Schottky Gates" Microelectronic Engineering. (in press). (1999)

[Publications] H.Sai: "Growth of Device Quality InGaP/GaAs Heterostructures by Gas Source Molecular Beam Epitaxy using Tertiarybutylphosphine" Solid State Electronics. (in press). (1999)

[Publications] H.Sai: "Study of Reflection Highly-Energy Electron Diffraction Oscillation for Optimization of Tertiarybutylphosphine-Based Molecular Beam Epitaxial Growth of In_<0.48>Ga_<0.52>P on GaAs" Japanese Journal of Applied Physics. 38(in press). (1999)

[Publications] H.Sai: "H.Sai, H.Fujikura and Hasegawa : “Gas Source Molecular Beam Epitaxial Growth of In_<1-x>Ga_xP on GaAs Using Tertiarybutylphosphine" Japanese Journal of Applied Physics. 38(in press). (1999)

[Publications] H.Hasegawa: "Properties of Metal-Semiconductor Interfaces Formed on n-type GaN" Japanese Journal of Applied Physics. 38(in press). (1999)

[Publications] T.Sato: "Formation of Size- and Position-Controlled Nanometer Size Pt Dots on GaAsand InP Substrates by Pulsed electrochemical Depositionc" Japanese Journal of Applied Physics. 38(in press). (1999)

[Publications] T.Yoshida: "A Novel Non-Destructive Characterization Method of Electronic Properties of Pre- and Post-Prosessing Silicon Surfaces Based on Ultrahigh-Vacuum Contactless Capacitance-Voltage Measurements" Japanese Journal of Applied Physics. 38(in press). (1999)

[Publications] M.Mutoh: "Effects of Initial Surface Reconstruction on Silicon Interface Control Layer Based Passivation of (001) GaAs Surfaces Studied in an Ultrahigh-Vacuum Multichamber System" Japanese Journal of Applied Physics. 38(in press). (1999)

[Publications] H.Takahashi: "In-Situ Characterization Technique of Compound Semiconductor Heterostructure Growth and Device Processing Steps Based on UHV Contactless Capacitance-Voltage Measurement" Solid-State Electron.(in press). (1999)

[Publications] Y.Koyama: "Formation Processes and Properties of Schottky and Ohmic Contacts on n-type GaN form Field Effect Transistor Applications" Solid-State Electron.(in press). (1999)

[Publications] A.Hamamatsu: "Formation of <001>-Aligned Nano-Scale Pores on (001)n-InP Surfaces by Photoelectrochemical Anodization in HCl" Journal of Electroanalytical Chemistry. (in press). (1999)

[Publications] J.L.Wang: "Mn (thin-film)/Si(substrate) conacts : Analysis of the buried interface by sofy X-ray emission spectroscopy" Japanese Journal of Applied Physics. 38. 198 (1999)

[Publications] K.Ueno: "A novel method to fabricate a molecular quantum structure : Selective growth of C60 on layered metarial heterostructures" Japanese Journal of Applied Physics. 38. 511 (1999)

[Publications] N.Sawaki: "Electron tunneling time into a quantum disk" Microelectronic Engineering. (in press). (1999)

[Publications] H.Kondo: "Conductance oscillations in low-dimensional ion implanted regions annealead by rapid thermal annealing" Japanese Journal of Applied Physics. 38(in press). (1999)

[Publications] S.Nomura: "Enhancement of photoluminescence near Fermi level in bias voltage controlled quantum dot array" Solid-State Communications. 106. 815 (1998)

[Publications] M.Otobe: "Observation of single electron charging effect in nanocrystalline silicon at room temperature using atomic force microscopy" Applied Physics Letters. 72. 1089 (1998)

[Publications] B.Ullrich: "Optical and Hybrid the Propertiesof the ZnSe/InSe Heterojunctions" Solid State Commun.107. 209 (1998)

[Publications] T.Loher: "Van der Waals Type Buffer Layers : Epitaxial Growth of the Large Lattice Mismatch System CdS/InSe/H-Si (100)" Appl.Sur.Sci.130-132. 334 (1998)

[Publications] Y.Kawaguchi: "Selective area growth of GaN on Si substrates using SiO2 mask by MOVPE" Japanese Journal of Applied Physics. 37. L966 (1998)

[Publications] M.Ishida: "Computer simulation of tunneling transfer and formation of resonant states in a GaAs/AlGaAs 2DEG disk" Japanese Journal of Applied Physics. 38(in press). (1999)

[Publications] H.Iwano: "Hopping conduction and localized states in p-Si wires formed by focused ion beam implantations" Journal of Vacuum Science & Technology B. 16. 2558 (1998)

[Publications] J.P.Bird: "Intrinsic stable orbits in open quantum dots" Semicond.Sci.Technol.13. A4 (1998)

[Publications] K.Ishibashi: "Characterization of SET electrometer coupled to the quantum dot in GaAs/AlGaAs 2DEG" Microelectronics Engineering. (in press). (1999)

長谷川英機北海道大学, 工学研究科, 教授 (60001781)