1999 Fiscal Year Annual Research Report

ナノ構造の表面・界面の制御と単電子トンネル障壁の最適化

Research Project

Project/Area Number	08247101
Research Institution	Hokkaido University
Principal Investigator	長谷川英機北海道大学, 大学院・工学研究科, 教授 (60001781)
Co-Investigator(Kenkyū-buntansha)	澤木宣彦名古屋大学, 工学研究科, 教授 (70023330) 小間篤東京大学, 理学系研究科, 教授 (00010950) 岩見基弘岡山大学, 理学部, 教授 (80029123) 菅野卓雄東洋大学, 工学部, 教授 (50010707) 安田幸夫名古屋大学, 工学研究科, 教授 (60126951)
Keywords	単電子デバイス / ナノ構造 / 表面・界面 / トンネル障壁 / 量子ドット / 量子デバイス / 原子スケール制御 / 高密度集積化
Research Abstract	本研究は、平成8〜11年度に設定された特定領域研究(A)「単電子デバイスとその高密度集積化」の計画研究として、その主要研究項目(A02)「ナノ構造の表面・界面の制御と単電子トンネル障壁の最適化」を担当するものである。本年度の主要な成果を以下にまとめる。 (1)ナノサイズ金属-半導体界面形成プロセスを開発し、量子細線トランジスタとナノ金属ドットによる単電子メモリ回路を試作した。また、ラップゲート構造による単電子インバータ回路を作製し、反転動作を確認した。 (2)4H-SiC(0001)面上の原子配列を明らかにし、この表面にNi金属微粒子を室温で形成できることを示した。 (3)電子線照射によりCaF_2表面のF原子脱離を行い、その箇所にC_<60>分子を自己集積化させることに成功した。 (4)フェムト秒分光法と計算により、量子ドット内のトンネル過程、エネルギー緩和過程を明らかにした (5)集束イオンビームを用いたナノチャネルSiMOSFETを作製し、明瞭なクーロンブロッケード現象を観測した。 (6)Si微傾斜基板を超高真空中でアニールすることにより、2次元的周期構造を自然形成することに成功した。 (7)縦型トランジスタ構造により、1〜2個のSi量子ドットの単電子輸送特性を観測し、モデル化を行った。 (8)アンモニア添加のアルカンチオールにGaAsを浸漬するのみで、自己組織膜が容易に調製できることを示した。 (9)電場下のInP自己形成量子ドットの発光スペクトルより、キャリアの緩和ダイナミクスを詳細に評価した。 (10)スピンエコー法によりタンパク質内部の単電子移動過程を評価し、電子スピンの空間配置を決定した。 (11)MBE-STMを用い、Si表面でのGeドット形成機構やAsやGaのサーファクタントとしての役割を明らかにした。 (12)超高真空STM/STSを用いてInAs量子ドットのバンドギャップ測定を行い、そのサイズ依存性を評価した。 (13)TiO_2表面の光エッチングによりナノ構造を形成し、また、光制御によりAu表面にAuコロイドを配列させた。 (14)大環状イオウ分子を規則的に配列し、その分子空孔内に金属を析出させるプロセスを確立した。 (15)Geナノ結晶を分散したNylon11薄膜を形成し、200Kまで明瞭なクーロンステアケースを観測した。

Research Products

(58 results)

All Other

All Publications (58 results)

[Publications] H.Hasegawa: "Fermi Level Pinning and Schottky Barrier Height Control at Metal-Semiconductor Interfaces of InP and Related Materials"Japanese Journal of Applied Physics. 38. 1098-1102 (1999)
[Publications] T.Muranaka: "Size-Controlled Formation of Decananometer InGaAs Quantum Wires by Selective Molecular Beam Epitaxy on InP Patterned Substrates"Japanese Journal of Applied Physics. 38. 1071-1074 (1999)
[Publications] H.Fujikura: "Extra-Side-Facet Control in Selective Molecular Beam Epitaxial Growth of InGaAs Ridge Quantum Wires for Improvement of Wire Uniformity"Japanese Journal of Applied Physics. 38. 1067-1070 (1999)
[Publications] M.B.Takeyama: "Interfacial Reaction and Electrical Properties in the Sputter-Deposited Al/Ti Ohmic Contact to n-InP"Japanese Journal of Applied Physics. 38. 1115-1118 (1999)
[Publications] C.Kaneshiro: "Electrochemical Etching of Indium Phosphide Surfaces Studied by Voltammetry and Scanned Probe Microscopes"Japanese Journal of Applied Physics. 38. 1147-1152 (1999)
[Publications] T.Sato: "The Strong Correlation Between Interface Microstructure and Barrier Height in n-InP Schottky Contacts Formed by In Situ Electrochemical Process"Japanese Journal of Applied Physics. 38. 1103-1106 (1999)
[Publications] H.Takahashi: "X-ray Photoelectron Spectroscopy and Ultrahigh Vacuum Contactless Capacitance-Voltage Characterization of Novel Oxide-Free InP Passivation Process Using a Silicon Surface Quantum Well"Japanese Journal of Applied Physics. 38. 1128-1132 (1999)
[Publications] Y.Sato: "Voltage Gain in GaAs-Based Lateral Single-Electron Transistors Having Three Schottky Wrap Gates"Japanese Journal of Applied Physics. 38. 410-414 (1999)
[Publications] J.Nakamura: "Transport Properties of Schottky In-Plane-Gate GaAs Single and Coupled Quantum Wire Trasistors"IOP conference series. 162. 409-414 (1999)
[Publications] N.Ono: "Study of Selective MBE Growth on Patterned (001) InP Substrates Toward Realization of <100>-Oriented InGaAs Ridge Quantum Wires"IOP conference series. 162. 385-390 (1999)
[Publications] C.Kaneshiro: "Realization of Strongly Metal-Dependent Schottky Barrier Heights on n-GaAs by In Situ Electrochemical Process"IOP conference series. 162(in press). (1999)
[Publications] T.Muranaka: "Realization of InP-Based InGaAs Single Electron Transistors on Wires and Dots Groen by Selective MBE"Microelectronic Engineering. 47. 201-203 (1999)
[Publications] H.Okada: "GaAs-Based Single Electron Logic and Memory Devices Using Electro-Deposited Nanometer Schottky Gates"Microelectronic Engineering. 285-287 (1999)
[Publications] H.Sai: "Growth of Device Quality InGaP/GaAs Heterostructures by Gas Source Molecular Beam Epitaxy using Tertiarybutylphosphine"Solid State Electron. 1541-1546 (1999)
[Publications] H.Sai: "Study of Reflection High-Energy Electron Diffraction Oscillation for Optimization of Tertiarybutylphosphine-Based Molecular Beam Epitaxial Growth of In_<0.48>Ga_<0.52>P on GaAs"Japanese Journal of Applied Physics. 38. 824-831 (1999)
[Publications] H.Sai: "Gas Source Molecular Beam Epitaxial Growth of In_<1-x>Ga_xP on GaAs Using Tertiarybutylphosphine"Japanese Journal of Applied Physics. 38. 151-158 (1999)
[Publications] H.Hasegawa: "Properties of Metal-Semiconductor Interfaces Formed on n-type GaN"Japanese Journal of Applied Physics. 38. 2637-2639 (1999)
[Publications] T.Sato: "Formation of Size- and Position-Controlled Nanometer Size Pt Dots on GaAs and InP Substrates by Pulsed Electrochemical Deposition"Japanese Journal of Applied Physics. 38. 2448-2452 (1999)
[Publications] T.Yoshida: "A Novel Non-Destructive Characterization Method of Electronic Properties of Pre- and Post-Processing Silicon Surfaces Based on Ultrahigh-Vacuum Contactless Capacitance-Voltage Measurements"Japanese Journal of Applied Physics. 38. 2349-2354 (1999)
[Publications] M.Mutoh: "Effects of Initial Surface Reconstruction on Silicon Interface Control Layer Based Passivation of(001)GaAs Surfaces Studied in an Ultrahigh-Vacuum Multichamber System"Japanese Journal of Applied Physics. 38. 2538-2543 (1999)
[Publications] H.Takahashi: "In-situ Characterization Technique of Compound Semiconductor Heterostructure Growth and Device Processing Steps Based on UHV Contactless Capacitance-Voltage Measurement"Solid-State Electronics. 43. 1561-1570 (1999)
[Publications] Y.Koyama: "Formation Processes and Properties of Schottky and Ohmic Contacts on n-type GaN form Field Effect Transistor Applications"Solid-State Electronics. 43. 1483-1488 (1999)
[Publications] A.Hamamatsu: "A.Hamamatsu, C.Kaneshiro, H.Fujikura and H.Hasegawa, "Formation of <001>-Aligned Nano-Scale Pores on (001) n-InP Surfaces by Photoelectrochemical Anodization in HCI"Journal of Electroanalytical Chemistry. 223-229 (1999)
[Publications] B.Adamowicz: "Electronic Properties of Al_xGa_<1-x>As Surface Passivation by Ultrathin Silicon Interface Control Layer"Applied Surface Science. 141. 326-332 (1999)
[Publications] B.Adamowicz: "Computer simulation of the surface photovoltage on Si and GaAs surfaces with U-shaped surface state continuum"Vacuum. 54. 137-177 (1999)
[Publications] H.Hasegawa: "Molectular-Beam Epitaxy and Device Applications of III-V Semiconductor Nanowires"MRS Bulletin. 24. 25-30 (1999)
[Publications] H.Hasegawa: "Properties of nanometer-sized metal-semiconductor interfaces of GaAs and InP formed by an in situ electrochemical process"Journal of Vacuum Science and Techonolgy. B17. 1856-1866 (1999)
[Publications] H.Okada: "Characterization of GaAs Schottky in-plane gate quantum wire transistors fow switching of quantized conductance"Physica B. 272. 123-126 (1999)
[Publications] S.kasai: "Conductance oscillation characteristics of GaAs Schottky wrap-gate single-electron transistors"Physica B. 272. 88-91 (1999)
[Publications] H.Fujikura: "Selective growth of quantum wire-dot couple structures with novel high index facets for InGaAs single electron transistor arrays"Microelectronics Journal. 30. 397-401 (1999)
[Publications] T.Tanaka: "A novel GaAs flip-chip power MODFET with high gain and efficiency"Solid-State Electronics. 43. 1405-1411 (1999)
[Publications] D.Ueda: "Implementation of GaAs monolithic microwave integrated circuits with on-chip BST capacitors"Journal of Electroceramics. 3. 105-113 (1999)
[Publications] H.Hasegawa: "Advanced mesoscopic device concepts and technology"Microelectronic Engineering. (in press). (2000)
[Publications] H.Hasegawa: "MBE Growth and Applications of Silicon Interface Control Layers"Thin Solid Films. (in press). (2000)
[Publications] H.Hasegawa: "Unpinning of Fermi Level in Nanometer-Sized Schottky Contacts on GaAs and InP"Applies Surface Science. (in press). (2000)
[Publications] H.Fujikura: "Formation of Device-Oriented InGaAs Coupled Quantum Structures by Selective MBE Growth on Patterned InP Substrates"Physica E. (in press). (2000)
[Publications] T.Sato: "Electrical Properties of Nanometer-Sized Schottky Contacts on n-GaAs and n-InP Formed by in situ Electrochemical Process"Japanese Journal Applies Physics. (in press). (2000)
[Publications] M.Iwaya: "Chemical can Electrochemical Nanofabrication Processes for Schottky In-Plane Gate GaAs Single and Coupled Quantum Wire Transistors"Japanese Journal Applies Physics. (in press). (2000)
[Publications] S.kasai: "GaAs quantum wire transistor and single electron transistors using Schottky wrap gates for quantum integrated circuits"IOP conference series. (in press). (2000)
[Publications] T.Muranaka: "Selective MBE growth of InGaAs quantum wire-dot coupled structures with controlled double-barrier potential profiles"IOP conference series. (in press). (2000)
[Publications] N.Negoro: "Scanning Tunneling Microscopy and Spectroscopy Study of Ultrathin Si Interface Control Layers Grown on (001) GaAs for Surface Passivation"Applied Surface Science. (in press). (2000)
[Publications] S.Ootomo: "Nitridation of GaP(100) Surfaces by Rf Nitrogen Radicals and by ECR Nitrogen Plasma"Japanese Journal of Applied Physics. 39(in press). (2000)
[Publications] M.Yamada: "Fabrication and Characterization of Novel Oxide-Free InP MISFET Having and Ultra-Narrow Si Surface Quantum Well"Japanese Journal of Applied Physics. 39(in press). (2000)
[Publications] R.Nakasaki: "Insulator-GaN Interface Structures Formed by Plasma-Assisted Chemical Vapor Deposition"Physica E. (in press). (2000)
[Publications] C.Jiang: "Vertical Barrier Layer Formation during Selective MBE Growth of InGaAs Ridge Quantum Wires on InP Patterned Substrates"Physica E. (in press). (2000)
[Publications] S.Anantathanasarn: "Surface Passivation of GaAs by Ultra-thin Cubic GaN Layer"Applied Surface Science. (in press). (2000)
[Publications] K.Ueno: "Growth and characterization of Ga_2Se_3/GaAs(100) epitaxial thin films"J.Cryst.Growth. 207. 69-75 (1999)
[Publications] N.Sawaki: "Electron tunneling time into a quantum disk"Microelectronic Engineering. 47. 143-145 (1999)
[Publications] H.Kondo: "Coulomb blockade phenomena in low-dimensional Si MOSFETs fabricated using focused-ion-beam implantation"Jpn.J.Appl.Phys.. 38. 7222-7226 (1999)
[Publications] T.Hanjiri: "Self-formation of ultrasmall structures on Si substrates for nano-device array"J.Cryst.Growth. (in press). (2000)
[Publications] S.Dutta: "Silicon based single electron memory using multi-tunnel junction fabricated by electron beam direct wtiting"Appl.Phys.Lett.. 75. 1422-1424 (1999)
[Publications] T.Nakanishi: "Structure and photoelectrochemical properties of laminated monoparticle layers of CdS and ZnS on gold"Jpn.J.Appl.Phys.. 38. 518-521 (1999)
[Publications] I.V.Ignatiev: "Anti-Stokes photoluminescence of InP self-assembledquantum dots in the presence of electric current"Phys.Rev.B. 60. R14001 (1999)
[Publications] M.Iwaki: "Time-resolved spectroscopy of chlorophyll-a like electron acceptor in the reaction center complex of the green sulfur bacterium Chlorobium tepidum"Plant and Cell Physiol. 40. 1021-1028 (1999)
[Publications] L.Mantese: "Analysis of high-index Si(100) surfaces by reflectance difference spectroscopy"J.Vac.Sci.Technol A. 17. 1652-1656 (1999)
[Publications] K.Murakoshi: "Anisotropic agglomeration of surface-modified gold nanoparticles in solution and on sold surfaces"Jpn.J.Appl.Phys.. (in press). (2000)
[Publications] S.Nakabayashi: "Two dimensional metal deposition at liquid/liquid interface : potential and magnetohydrodynamic pattern transition"J.Electroanal.Cehm. 473. 54-58 (1999)
[Publications] M.Fujii: "Photoluminescence from Si nanocrystals dispoersed in phosphosilicate glass thin films : improvement of photoluminecsence efficiency"Appl.Phys.Lett.. 75. 184-186 (1999)

1999 Fiscal Year Annual Research Report

ナノ構造の表面・界面の制御と単電子トンネル障壁の最適化

Principal Investigator

長谷川 英機 北海道大学, 大学院・工学研究科, 教授 (60001781)

Research Products

[Publications] H.Hasegawa: "Fermi Level Pinning and Schottky Barrier Height Control at Metal-Semiconductor Interfaces of InP and Related Materials"Japanese Journal of Applied Physics. 38. 1098-1102 (1999)

[Publications] T.Muranaka: "Size-Controlled Formation of Decananometer InGaAs Quantum Wires by Selective Molecular Beam Epitaxy on InP Patterned Substrates"Japanese Journal of Applied Physics. 38. 1071-1074 (1999)

[Publications] H.Fujikura: "Extra-Side-Facet Control in Selective Molecular Beam Epitaxial Growth of InGaAs Ridge Quantum Wires for Improvement of Wire Uniformity"Japanese Journal of Applied Physics. 38. 1067-1070 (1999)

[Publications] M.B.Takeyama: "Interfacial Reaction and Electrical Properties in the Sputter-Deposited Al/Ti Ohmic Contact to n-InP"Japanese Journal of Applied Physics. 38. 1115-1118 (1999)

[Publications] C.Kaneshiro: "Electrochemical Etching of Indium Phosphide Surfaces Studied by Voltammetry and Scanned Probe Microscopes"Japanese Journal of Applied Physics. 38. 1147-1152 (1999)

[Publications] T.Sato: "The Strong Correlation Between Interface Microstructure and Barrier Height in n-InP Schottky Contacts Formed by In Situ Electrochemical Process"Japanese Journal of Applied Physics. 38. 1103-1106 (1999)

[Publications] H.Takahashi: "X-ray Photoelectron Spectroscopy and Ultrahigh Vacuum Contactless Capacitance-Voltage Characterization of Novel Oxide-Free InP Passivation Process Using a Silicon Surface Quantum Well"Japanese Journal of Applied Physics. 38. 1128-1132 (1999)

[Publications] Y.Sato: "Voltage Gain in GaAs-Based Lateral Single-Electron Transistors Having Three Schottky Wrap Gates"Japanese Journal of Applied Physics. 38. 410-414 (1999)

[Publications] J.Nakamura: "Transport Properties of Schottky In-Plane-Gate GaAs Single and Coupled Quantum Wire Trasistors"IOP conference series. 162. 409-414 (1999)

[Publications] N.Ono: "Study of Selective MBE Growth on Patterned (001) InP Substrates Toward Realization of <100>-Oriented InGaAs Ridge Quantum Wires"IOP conference series. 162. 385-390 (1999)

[Publications] C.Kaneshiro: "Realization of Strongly Metal-Dependent Schottky Barrier Heights on n-GaAs by In Situ Electrochemical Process"IOP conference series. 162(in press). (1999)

[Publications] T.Muranaka: "Realization of InP-Based InGaAs Single Electron Transistors on Wires and Dots Groen by Selective MBE"Microelectronic Engineering. 47. 201-203 (1999)

[Publications] H.Okada: "GaAs-Based Single Electron Logic and Memory Devices Using Electro-Deposited Nanometer Schottky Gates"Microelectronic Engineering. 285-287 (1999)

[Publications] H.Sai: "Growth of Device Quality InGaP/GaAs Heterostructures by Gas Source Molecular Beam Epitaxy using Tertiarybutylphosphine"Solid State Electron. 1541-1546 (1999)

[Publications] H.Sai: "Study of Reflection High-Energy Electron Diffraction Oscillation for Optimization of Tertiarybutylphosphine-Based Molecular Beam Epitaxial Growth of In_<0.48>Ga_<0.52>P on GaAs"Japanese Journal of Applied Physics. 38. 824-831 (1999)

[Publications] H.Sai: "Gas Source Molecular Beam Epitaxial Growth of In_<1-x>Ga_xP on GaAs Using Tertiarybutylphosphine"Japanese Journal of Applied Physics. 38. 151-158 (1999)

[Publications] H.Hasegawa: "Properties of Metal-Semiconductor Interfaces Formed on n-type GaN"Japanese Journal of Applied Physics. 38. 2637-2639 (1999)

[Publications] T.Sato: "Formation of Size- and Position-Controlled Nanometer Size Pt Dots on GaAs and InP Substrates by Pulsed Electrochemical Deposition"Japanese Journal of Applied Physics. 38. 2448-2452 (1999)

[Publications] T.Yoshida: "A Novel Non-Destructive Characterization Method of Electronic Properties of Pre- and Post-Processing Silicon Surfaces Based on Ultrahigh-Vacuum Contactless Capacitance-Voltage Measurements"Japanese Journal of Applied Physics. 38. 2349-2354 (1999)

[Publications] M.Mutoh: "Effects of Initial Surface Reconstruction on Silicon Interface Control Layer Based Passivation of(001)GaAs Surfaces Studied in an Ultrahigh-Vacuum Multichamber System"Japanese Journal of Applied Physics. 38. 2538-2543 (1999)

[Publications] H.Takahashi: "In-situ Characterization Technique of Compound Semiconductor Heterostructure Growth and Device Processing Steps Based on UHV Contactless Capacitance-Voltage Measurement"Solid-State Electronics. 43. 1561-1570 (1999)

[Publications] Y.Koyama: "Formation Processes and Properties of Schottky and Ohmic Contacts on n-type GaN form Field Effect Transistor Applications"Solid-State Electronics. 43. 1483-1488 (1999)

[Publications] A.Hamamatsu: "A.Hamamatsu, C.Kaneshiro, H.Fujikura and H.Hasegawa, "Formation of <001>-Aligned Nano-Scale Pores on (001) n-InP Surfaces by Photoelectrochemical Anodization in HCI"Journal of Electroanalytical Chemistry. 223-229 (1999)

[Publications] B.Adamowicz: "Electronic Properties of Al_xGa_<1-x>As Surface Passivation by Ultrathin Silicon Interface Control Layer"Applied Surface Science. 141. 326-332 (1999)

[Publications] B.Adamowicz: "Computer simulation of the surface photovoltage on Si and GaAs surfaces with U-shaped surface state continuum"Vacuum. 54. 137-177 (1999)

[Publications] H.Hasegawa: "Molectular-Beam Epitaxy and Device Applications of III-V Semiconductor Nanowires"MRS Bulletin. 24. 25-30 (1999)

[Publications] H.Hasegawa: "Properties of nanometer-sized metal-semiconductor interfaces of GaAs and InP formed by an in situ electrochemical process"Journal of Vacuum Science and Techonolgy. B17. 1856-1866 (1999)

[Publications] H.Okada: "Characterization of GaAs Schottky in-plane gate quantum wire transistors fow switching of quantized conductance"Physica B. 272. 123-126 (1999)

[Publications] S.kasai: "Conductance oscillation characteristics of GaAs Schottky wrap-gate single-electron transistors"Physica B. 272. 88-91 (1999)

[Publications] H.Fujikura: "Selective growth of quantum wire-dot couple structures with novel high index facets for InGaAs single electron transistor arrays"Microelectronics Journal. 30. 397-401 (1999)

[Publications] T.Tanaka: "A novel GaAs flip-chip power MODFET with high gain and efficiency"Solid-State Electronics. 43. 1405-1411 (1999)

[Publications] D.Ueda: "Implementation of GaAs monolithic microwave integrated circuits with on-chip BST capacitors"Journal of Electroceramics. 3. 105-113 (1999)

[Publications] H.Hasegawa: "Advanced mesoscopic device concepts and technology"Microelectronic Engineering. (in press). (2000)

[Publications] H.Hasegawa: "MBE Growth and Applications of Silicon Interface Control Layers"Thin Solid Films. (in press). (2000)

[Publications] H.Hasegawa: "Unpinning of Fermi Level in Nanometer-Sized Schottky Contacts on GaAs and InP"Applies Surface Science. (in press). (2000)

[Publications] H.Fujikura: "Formation of Device-Oriented InGaAs Coupled Quantum Structures by Selective MBE Growth on Patterned InP Substrates"Physica E. (in press). (2000)

[Publications] T.Sato: "Electrical Properties of Nanometer-Sized Schottky Contacts on n-GaAs and n-InP Formed by in situ Electrochemical Process"Japanese Journal Applies Physics. (in press). (2000)

[Publications] M.Iwaya: "Chemical can Electrochemical Nanofabrication Processes for Schottky In-Plane Gate GaAs Single and Coupled Quantum Wire Transistors"Japanese Journal Applies Physics. (in press). (2000)

[Publications] S.kasai: "GaAs quantum wire transistor and single electron transistors using Schottky wrap gates for quantum integrated circuits"IOP conference series. (in press). (2000)

[Publications] T.Muranaka: "Selective MBE growth of InGaAs quantum wire-dot coupled structures with controlled double-barrier potential profiles"IOP conference series. (in press). (2000)

[Publications] N.Negoro: "Scanning Tunneling Microscopy and Spectroscopy Study of Ultrathin Si Interface Control Layers Grown on (001) GaAs for Surface Passivation"Applied Surface Science. (in press). (2000)

[Publications] S.Ootomo: "Nitridation of GaP(100) Surfaces by Rf Nitrogen Radicals and by ECR Nitrogen Plasma"Japanese Journal of Applied Physics. 39(in press). (2000)

[Publications] M.Yamada: "Fabrication and Characterization of Novel Oxide-Free InP MISFET Having and Ultra-Narrow Si Surface Quantum Well"Japanese Journal of Applied Physics. 39(in press). (2000)

[Publications] R.Nakasaki: "Insulator-GaN Interface Structures Formed by Plasma-Assisted Chemical Vapor Deposition"Physica E. (in press). (2000)

[Publications] C.Jiang: "Vertical Barrier Layer Formation during Selective MBE Growth of InGaAs Ridge Quantum Wires on InP Patterned Substrates"Physica E. (in press). (2000)

[Publications] S.Anantathanasarn: "Surface Passivation of GaAs by Ultra-thin Cubic GaN Layer"Applied Surface Science. (in press). (2000)

[Publications] K.Ueno: "Growth and characterization of Ga_2Se_3/GaAs(100) epitaxial thin films"J.Cryst.Growth. 207. 69-75 (1999)

[Publications] N.Sawaki: "Electron tunneling time into a quantum disk"Microelectronic Engineering. 47. 143-145 (1999)

[Publications] H.Kondo: "Coulomb blockade phenomena in low-dimensional Si MOSFETs fabricated using focused-ion-beam implantation"Jpn.J.Appl.Phys.. 38. 7222-7226 (1999)

[Publications] T.Hanjiri: "Self-formation of ultrasmall structures on Si substrates for nano-device array"J.Cryst.Growth. (in press). (2000)

[Publications] S.Dutta: "Silicon based single electron memory using multi-tunnel junction fabricated by electron beam direct wtiting"Appl.Phys.Lett.. 75. 1422-1424 (1999)

[Publications] T.Nakanishi: "Structure and photoelectrochemical properties of laminated monoparticle layers of CdS and ZnS on gold"Jpn.J.Appl.Phys.. 38. 518-521 (1999)

[Publications] I.V.Ignatiev: "Anti-Stokes photoluminescence of InP self-assembledquantum dots in the presence of electric current"Phys.Rev.B. 60. R14001 (1999)

[Publications] M.Iwaki: "Time-resolved spectroscopy of chlorophyll-a like electron acceptor in the reaction center complex of the green sulfur bacterium Chlorobium tepidum"Plant and Cell Physiol. 40. 1021-1028 (1999)

[Publications] L.Mantese: "Analysis of high-index Si(100) surfaces by reflectance difference spectroscopy"J.Vac.Sci.Technol A. 17. 1652-1656 (1999)

[Publications] K.Murakoshi: "Anisotropic agglomeration of surface-modified gold nanoparticles in solution and on sold surfaces"Jpn.J.Appl.Phys.. (in press). (2000)

[Publications] S.Nakabayashi: "Two dimensional metal deposition at liquid/liquid interface : potential and magnetohydrodynamic pattern transition"J.Electroanal.Cehm. 473. 54-58 (1999)

[Publications] M.Fujii: "Photoluminescence from Si nanocrystals dispoersed in phosphosilicate glass thin films : improvement of photoluminecsence efficiency"Appl.Phys.Lett.. 75. 184-186 (1999)

長谷川英機北海道大学, 大学院・工学研究科, 教授 (60001781)