1998 Fiscal Year Annual Research Report

半導体モノシリック光集積回路のための面積選択有機金属気相エピタキシ

Research Project

Project/Area Number	09450007
Research Institution	The University of Tokyo
Principal Investigator	中野義昭東京大学, 工学系研究科, 助教授 (50183885)
Co-Investigator(Kenkyū-buntansha)	霜垣幸浩東京大学, 工学系研究科, 助教授 (60192613)
Keywords	MOVPE / MOCVD / 選択成長 / MOVE / 分光エリプソメトリ / 成長シミュレーション / MMIカプラ / 光アンプゲートスイッチ
Research Abstract	1.分光エリプソメトリによるMOVPEのその場観察ー界面急峻性の向上:前年度に開発した,分光エリプソメトリを用いた有機金属気相エピタキシ(MOVPE)のその場観察技術を応用して,1〜3分子層の厚さを有するInGaAs/InP量子井戸を作製し,それをCTR法によって評価したところ,従来のどの報告例より優れた信号が得られ,界面は実際に単分子層オーダの急峻性を有することが示された.2.流れ方向成長速度/膜質分布の解析とそれを応用した成長条件の最適化:InPおよびGaAsの原料ガス流れ方向の成長速度分布,膜質分布を,特別に作製したサセプタを用いて実験的に調べ,その結果と前年度に開発された成長シミュレータによる結果とを比較考察した.これを基に,高温時に発生する表面荒れのメカニズムを特定し,表面荒れを回避する成長条件を論理的に決定することに成功した.3.有機金属気相拡散選択エピタキシーによる多モード干渉カプラの試作:前年度に開発した有機金属気相拡散選択エピタキシー(metal-organic vapor phase diffusion enhanced selective area epitaxy,MOVE)は,導波路アレイを作製することのできる世界で唯一の選択成長技術である.この特徴を利用して,1×2多モード干渉(multiple mode interference,MMI)合/分波器を,選択成長によって世界で初めて試作,実現した.4.有機金属気相拡散選択エピタキシー技術を用いた光アンプゲートスイッチ集積回路の試作:さらに上記MOVEによる能動/受動集積を適用して,光交換で必要とされる光アンプゲートスイッチ集積回路を世界で初めて試作し,その動作を確認した.

Research Products
(15 results)

All Other

All Publications (15 results)

[Publications] Martin Bouda: "First multi-mode interference devices fabricated by metal-organic vapor phase diffusion enhanced selective area epitaxy" Conf.proc.,10th Itfernational Conf. on Indium phosphide and Related Materials (IPRM'98). WA1-5. 329-332 (1998)
[Publications] Tomoaki Toda: "Fabrication of InGaAs/GaAs DFB guantum Wire lasers by using v-grooved substrates" Conf.proc.,10th International Gonf.on Indium phosphide and Related Materials (IPRN'98). WB1-5. 349-352 (1998)
[Publications] Yoshiaki Nakano: "In-situ characterization and modeling of MOVPE for optoelectronic devices" Conf.proc.,10th Inlernational Conf.on Indium phosphide and Related Materials (IPRM'98). WA1-1. 313-316 (1998)
[Publications] Shinya Sudo: "Improvement of hetero-inferface abruplness in MOVPE growth of InGaAs/InP guantum wells by in-situ kinetic ellipsometry" Conf.proc., 10th International Conf. on Indium phosphide and Related Materials (IPRM'98). ThA1-4. 485-488 (1998)
[Publications] Yoshiyuki Mishima: "Simulation of the growth enhancementin selective area HOVPE" Exlended Abstracts of the 17th Electronic Materials. SA2. 153-156 (1998)
[Publications] Martin Bouda: "First realization of multi-mode interference sevices by the MOVE2 selective area,growth process" Tech. Digest,Third Optoeletronics and Commnnications Conf.(OECC'98). 15B1-3. 338-339 (1998)
[Publications] Yoshiyuki Mishima: "Two-dimensional simulation of the growth enhancement in selective area metal-organic vapor prase epitaxy" Meeting Abstract,194th Electrochemical Society Annual Meeting. 98-2. 839 (1998)
[Publications] 戸田知朗: "マストランスポートによるInAsp量子細線の作線と光学特性評価" 電子情報通信学会技術研究報告(レーザ量子エレクトロニクス). LQE98-107. 55-60 (1998)
[Publications] Yoshiaki Nakano: "Wavelength frimming technology for multiwavelength DFB laser arrays in dense WDM applications" Conf.proc., IEEE Lasers and Electro-Optics Society Annual Meeting (LEOS′98). 2・FS1. 422-423 (1998)
[Publications] Martin Bouda: "Development of metal-organic rapor phase diffusion enhanced sekctive area epitaxy, a novel MOVPE selecfive area, growth technique, and its application to mu1t-mode interference device fabrication" Japanese Journal of Applied Physics. (採録決定済み). (1999)
[Publications] Yoshiyuki Mishima: "Two-dimensional simulation of the growth enhancement in selective area metal-organic vapor phase epitaxy" Proc.of Materials Research Society Annual Meeting.
[Publications] (採録決定済み). (1999)
[Publications] Tomoaki Toda: "Room temperature operation of 1.55μm InAsP/InP strained quantum wire DFB lasers fabricated by mass-fransport method" International Conf.on Indium Phoshide and Related Materials (IPRH). (採録決定済み). (1999)
[Publications] Weerachi Asawamethapant: "Congifudinal distribution analysis of InP growth in a horizontal MOVPE reactor for improved film guality" International Conf.on Indium phasekide and Related Maferials (IPRM). (再録決定済み). (1999)
[Publications] Yoshiaki Nakano: "In-situ characterizarion and inocleling of MOVPE for InP-based photonic devices" International Materials Research Society Meeting. (再録決定済み). (1999)

1998 Fiscal Year Annual Research Report

半導体モノシリック光集積回路のための面積選択有機金属気相エピタキシ

Principal Investigator

中野 義昭 東京大学, 工学系研究科, 助教授 (50183885)

Research Products

[Publications] Martin Bouda: "First multi-mode interference devices fabricated by metal-organic vapor phase diffusion enhanced selective area epitaxy" Conf.proc.,10th Itfernational Conf. on Indium phosphide and Related Materials (IPRM'98). WA1-5. 329-332 (1998)

[Publications] Tomoaki Toda: "Fabrication of InGaAs/GaAs DFB guantum Wire lasers by using v-grooved substrates" Conf.proc.,10th International Gonf.on Indium phosphide and Related Materials (IPRN'98). WB1-5. 349-352 (1998)

[Publications] Yoshiaki Nakano: "In-situ characterization and modeling of MOVPE for optoelectronic devices" Conf.proc.,10th Inlernational Conf.on Indium phosphide and Related Materials (IPRM'98). WA1-1. 313-316 (1998)

[Publications] Shinya Sudo: "Improvement of hetero-inferface abruplness in MOVPE growth of InGaAs/InP guantum wells by in-situ kinetic ellipsometry" Conf.proc., 10th International Conf. on Indium phosphide and Related Materials (IPRM'98). ThA1-4. 485-488 (1998)

[Publications] Yoshiyuki Mishima: "Simulation of the growth enhancementin selective area HOVPE" Exlended Abstracts of the 17th Electronic Materials. SA2. 153-156 (1998)

[Publications] Martin Bouda: "First realization of multi-mode interference sevices by the MOVE2 selective area,growth process" Tech. Digest,Third Optoeletronics and Commnnications Conf.(OECC'98). 15B1-3. 338-339 (1998)

[Publications] Yoshiyuki Mishima: "Two-dimensional simulation of the growth enhancement in selective area metal-organic vapor prase epitaxy" Meeting Abstract,194th Electrochemical Society Annual Meeting. 98-2. 839 (1998)

[Publications] 戸田知朗: "マストランスポートによるInAsp量子細線の作線と光学特性評価" 電子情報通信学会技術研究報告(レーザ量子エレクトロニクス). LQE98-107. 55-60 (1998)

[Publications] Yoshiaki Nakano: "Wavelength frimming technology for multiwavelength DFB laser arrays in dense WDM applications" Conf.proc., IEEE Lasers and Electro-Optics Society Annual Meeting (LEOS′98). 2・FS1. 422-423 (1998)

[Publications] Martin Bouda: "Development of metal-organic rapor phase diffusion enhanced sekctive area epitaxy, a novel MOVPE selecfive area, growth technique, and its application to mu1t-mode interference device fabrication" Japanese Journal of Applied Physics. (採録決定済み). (1999)

[Publications] Yoshiyuki Mishima: "Two-dimensional simulation of the growth enhancement in selective area metal-organic vapor phase epitaxy" Proc.of Materials Research Society Annual Meeting.

[Publications] (採録決定済み). (1999)

[Publications] Tomoaki Toda: "Room temperature operation of 1.55μm InAsP/InP strained quantum wire DFB lasers fabricated by mass-fransport method" International Conf.on Indium Phoshide and Related Materials (IPRH). (採録決定済み). (1999)

[Publications] Weerachi Asawamethapant: "Congifudinal distribution analysis of InP growth in a horizontal MOVPE reactor for improved film guality" International Conf.on Indium phasekide and Related Maferials (IPRM). (再録決定済み). (1999)

[Publications] Yoshiaki Nakano: "In-situ characterizarion and inocleling of MOVPE for InP-based photonic devices" International Materials Research Society Meeting. (再録決定済み). (1999)

中野義昭東京大学, 工学系研究科, 助教授 (50183885)