1998 Fiscal Year Final Research Report Summary
High Speed InP Schottky Power Rectifier
| Project/Area Number |
09555105
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 展開研究 |
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| Research Field |
電子デバイス・機器工学
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| Research Institution | The University of Electro-Communications (1998)
Hokkaido University (1997) |
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Principal Investigator |
WU Nan-Jian University of the Electro-Communications Asso.Pro, 電気通信学部, 助教授 (00250481)
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| Co-Investigator(Kenkyū-buntansha) |
YASUNAGA Hitoshi University of the Electoro-Communications Pro, 電気通信学部, 教授 (40017330)
AKAZAWA Masamichi Hokkaido Univ., Fac.of Eng., Asso.Pro., 大学院・工学研究科, 助教授 (30212400)
AMEMIYA Yoshihito Hokkaido Univ., Fac.of Eng., Pro., 大学院・工学研究科, 教授 (80250489)
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| Project Period (FY) |
1997 – 1998
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| Keywords | InP / Schottky / Diode / High Speed / Switching |
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| Research Abstract |
The optimal structure of high speed InP Schottky power rectifier was designed. InP Schottky power rectifier was fabricated by Novel In-Situ Electrochemical process. Summary of the results is given as following.
1) The rectification efficiency of InP Schottky power rectifier trades off the maximum operating frequency. Structure of the InP Schottky power rectifier was designed optimally. For example, to fabricate an InP Schottky power rectifier with a blocking voltage of 40V and efficiency of above 90%, the parameter of the InP epi-substrata must be designed as following. The thickness and donor density of n-InP epi-layer are 0.2um and 3x10^<16>/cm^3. respectively, Such the maximum operating frequency is obtained to be 10MHz.
2)To form an ohmic contact on n^+-InP, we have investigated the correlation between contact resistance, metal materials, and heat treatment. We found that the contact resistance of annealing (375C,5min) Ni/AuGe/n^+-InP system is small and It was used in InP Schottky power rectifier.
3) lnP Schottky rectifier diode was fabricated by Novel In-Situ Electrochemical process. An oxide-free, nearly ideal thermionic emission characteristics of the diode were obtained, Because the Fermi-level pinning at the Schottky diode interfaces was reduced, the Schottky barrier height can change over a wide range from 0.35 to 0.86 eV, depending on the metal material.
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