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1998 Fiscal Year Final Research Report Summary

High Speed InP Schottky Power Rectifier

Research Project

Project/Area Number 09555105
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section展開研究
Research Field 電子デバイス・機器工学
Research InstitutionThe University of Electro-Communications (1998)
Hokkaido University (1997)

Principal Investigator

WU Nan-Jian  University of the Electro-Communications Asso.Pro, 電気通信学部, 助教授 (00250481)

Co-Investigator(Kenkyū-buntansha) YASUNAGA Hitoshi  University of the Electoro-Communications Pro, 電気通信学部, 教授 (40017330)
AKAZAWA Masamichi  Hokkaido Univ., Fac.of Eng., Asso.Pro., 大学院・工学研究科, 助教授 (30212400)
AMEMIYA Yoshihito  Hokkaido Univ., Fac.of Eng., Pro., 大学院・工学研究科, 教授 (80250489)
Project Period (FY) 1997 – 1998
KeywordsInP / Schottky / Diode / High Speed / Switching
Research Abstract

The optimal structure of high speed InP Schottky power rectifier was designed. InP Schottky power rectifier was fabricated by Novel In-Situ Electrochemical process. Summary of the results is given as following.
1) The rectification efficiency of InP Schottky power rectifier trades off the maximum operating frequency. Structure of the InP Schottky power rectifier was designed optimally. For example, to fabricate an InP Schottky power rectifier with a blocking voltage of 40V and efficiency of above 90%, the parameter of the InP epi-substrata must be designed as following. The thickness and donor density of n-InP epi-layer are 0.2um and 3x10^<16>/cm^3. respectively, Such the maximum operating frequency is obtained to be 10MHz.
2)To form an ohmic contact on n^+-InP, we have investigated the correlation between contact resistance, metal materials, and heat treatment. We found that the contact resistance of annealing (375C,5min) Ni/AuGe/n^+-InP system is small and It was used in InP Schottky power rectifier.
3) lnP Schottky rectifier diode was fabricated by Novel In-Situ Electrochemical process. An oxide-free, nearly ideal thermionic emission characteristics of the diode were obtained, Because the Fermi-level pinning at the Schottky diode interfaces was reduced, the Schottky barrier height can change over a wide range from 0.35 to 0.86 eV, depending on the metal material.

  • Research Products

    (4 results)

All Other

All Publications (4 results)

  • [Publications] Nan-Jian WU et.al: "Cellular-Automaton circuits using single electron tunneling junctions" Jpn.J.Appl.Phys. vol.36. 2621-2627 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Nan-Jian Wu et.al: "Quantum cellular Automaton Devices using the image charge effect" Jpn.J.Appl.Phys. Vol.371. 2433-2438 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Nan-Jian Wu et.al: "Boltzman-machine neuron Device using Quantum coupled single electrons." Appl.Phys.lett. Vol 72. 3214-3216 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Nan-Jian Wu et.al: "Method for determing Weight coefficient for quantum Boltzman machine neuron devices" Jpn.J.Appl.Phys.Vol 35. 439-4423214-3216 (1998)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1999-12-08  

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