2001 Fiscal Year Final Research Report Summary
Study on Surface Reaction Processes Using High Performance Beam Device
| Project/Area Number |
10308016
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
プラズマ理工学
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| Research Institution | Nagoya University |
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Principal Investigator |
SUGAI Hideo Nagoya University, Graduate School of Engineering, Professor, 工学研究科, 教授 (40005517)
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| Co-Investigator(Kenkyū-buntansha) |
ISHIJIMA Tatsuo Nagoya University, Graduate School of Engineering, Research Associate, 工学研究科, 助手 (00324450)
TOYODA Hirotaka Nagoya University, Graduate School of Engineering, Associate Professor, 工学研究科, 助教授 (70207653)
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| Project Period (FY) |
1998 – 2001
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| Keywords | plaasma processing / etching / CVD / surface reaction / neutral radical / ion beam / silicon / XPS |
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| Research Abstract |
To investigate surface reaction processes in plasma processing (etching, CVD) for semiconductor manufacturing, highly controlled beam experiment has been carried out A few kinds of reactive ionic species important for processing are irradiated to a substrate with controlled energy and flux, and various kinds of surface-desorbed ionic and neutral radicals are detected by highly sensitive quadrupole mass spectrometer. At the same time, beam-irradiated surface is analyzed by in-situ XPS, Our purpose is to understand reaction process occurring on the surface based on these measurements.
The project is carried out focused on the following points.
( 1 ) Improvement of the experimental setup
The experimental setup is improved : detection sensitivity of neutral radicals are increased and in-situ XPS device is installed to the apparatus.
( 2 ) Study on reactions of fluorocarbon ion beam on silicon surface
CF_3^+ and CF_2^+ ion beam are irradiated on silicon surface, where surface-produced species such as SiF_2, SiF_4 and CF_x neutral radicals are successfully detected. Furthermore, surface state is monitored by in-situ XPS.
( 3 ) Study on reactions of fluorocarbon ion beam on silicon dioxide surface
CF_3^+ and CF_2^+ ion beam are irradiated on silicon dioxide surface, where surface-produced species and surface state are monitored by quadrupole mass spectrometer and in-situ XPS. Furthermore, the correlation of etching rate with species desorbed from the surface is investigated.
( 4 ) Study on fluorine ion beam with silicon
Fluorine ions which are believed to be one of important species for etching are irradiated on silicon surface, while surface-produced species are monitored.
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