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1999 Fiscal Year Final Research Report Summary

Development and Photonic Integration of Efficient and Stable Silicon-Based LED

Research Project

Project/Area Number 10355015
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section展開研究
Research Field 電子デバイス・機器工学
Research InstitutionTokyo University of Agriculture & Technology

Principal Investigator

KOSHIDA Nobuyoshi  Tokyo Univ. of A&T, Prof., 工学部, 教授 (50143631)

Co-Investigator(Kenkyū-buntansha) KOYAMA Hideki  Tokyo Univ. of A&T, Res. Assoc., 工学部, 助手 (40234918)
KOMODA Takuya  Matsushita Elect. Works, Senior Researcher, ウエルラボ, 主査技師
SUDA Yoshiyuki  Tokyo Univ. of A&T, Assoc. Prof., 工学部, 助教授 (10226582)
Project Period (FY) 1998 – 1999
Keywordsporous silicon / nanocrystalline silicon / quantum confinement / visible luminescence / silicon LED / quantum efficiency / optical wave guide / photonic integration
Research Abstract

To develop efficient and stable silicon-based LED and make the technological foundation of monolithic photonic integration more solid, experimental studies have been conducted in terms of fabrication technique, surface passivation, and related optoelectronic characterization. The major results and their significances are summarized as follows.
1. Drastic improvement in the efficiency of Si-based LEDs
By introducing a post-anodization electrochemical treatment, the leakage component in the porous silicon diode current is successfully reduced, and carrier injection into luminescent nanocrystalline silicon becomes very efficient. As a result, the external quantum efficiency is enhanced to beyond 1%. Also, an external power efficiency of 0.4% close to a practical level can be obtained from a diode with an appropriate device configuration. These are the highest values to date in this field. Some key issues for stabilization of LED operation and for tuning the emission band have also been clarified. Especially important result is that blue emission has been observed with oxide-free samples.
2. Findings of novel functions of silicon nanocrystals
From some electrical and optical investigations, it has been shown that luminescent nanocrystalline silicon exhibits various useful functions : light-emissive nonvolatile memory, ballistic electron emission, and thermally induced ultrasonic emission. Nanocrystalline silicon is very useful as a multi-functional material.
3. Toward photonic integration
The compatibility of nanocrystalline silicon with three-dimensional buried optical waveguide was examined. It has been demonstrated that a buried bent waveguide with an extremely small curvature can be fabricated by simple palanar processing. Nonlinear optical effects due to refractive index change were also observed.

  • Research Products

    (32 results)

All Other

All Publications (32 results)

  • [Publications] H. Shinoda, T. Nakajima, K. Ueno, and N. Koshida: "Thermally induced ultrasonic emission from porous silicon"Nature. 400. 853-855 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] N. Koshida, X. Sheng, and T. Komoda :: "Quasiballistic electron emission from porous silicon diodes"Appl. Surf. Sci.. 146. 371-376 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] N. koshida, K. Ueno, and X. Sheng :: "Field-induced functions of porous Si as a confined system"J. Luminescence. 80. 37-42 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M. Takahashi and N. Koshida: "Fabrication and characteristics of three-dimensionally buried porous silicon optical waveguides"J. Appl. Phys.. 86. 5274-5278 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T. Komoda, X. sheng, and N. Koshida: "Mechanism of efficient and stable surface-emitting cold cathode based on porous poly-crystalline silicon films"J. Vac. Sci. Technol. B. 17. 1076-1079 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] X. Sheng, A. Kojima, T. Komoda, and N. Koshida: "Efficient and ballistic cold electron emission from porous poly-crystalline silicon diodes with a porosity multilayer structure"J. Vac. Sci. Tecnol. B. 18(in press). (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] N. Takahashi, Y. Toriumi, T. Matsumoto, Y. Masumoto, and N. Koshida: "Significant photoinduced refractive index change observed in porous silicon Fabry-Perot resonators"Appl. Phys. Lett.. 76(in press). (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] B. Gelloz and N. Koshida: "Electroluminescence with high and stable quantum efficiency and low threshold voltage from anodically oxidized thin porous silicon diodes"J. Appl. Phys.. 87(in press). (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] B. Gelloz, T. Nakagawa, and N. Koshida: "Enhancement of quantum efficiency and stability of electroluminescence from porous silicon by anodic passivation"Appl. Phys. Lett.. 73. 2021-2023 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T. Komada, X. Sheng, and N. Koshida: "Characteristics of surface-emitting cold cathode based on porous polysilicon"Mat. Res. Soc. Symp. Proc.. Vol. 509. 187-192 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] X. Sheng and N. Koshida: "Quasi-ballistic electron emission from porous silicon diodes with a graded-band multilayer structure"Mat. Res. Soc. Symp. Proc.. Vol. 509. 193-198 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S. Tanaka, H. Koyama, and N. Koshida: "Photoluminescence decay dynamics of ion-irradiated porous silicon : Evidence for the absence of carrier migration"J. Appl. Phys.. 84. 2334-2336 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] N. Takahashi, M. Araki, and N. Koshida: "Buried optical waveguides of porous silicon"Jpn. J. Appl. Phys.. 37. L1017-L1019 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T. Matsumoto, H. Mimura, N. Koshida, and Y. Masumoto: "The density of states in silicon nanostructures determined by space-charge-limited current measurements"J. Appl. Phys.. 84. 6157-6161 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T. Nakagawa, H. Sugiyama, and N. Koshida: "Fabrication of periodic nanostructure by controlled anodization"Jpn. J. Appl. Phys.. 37. 7186-7189 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Ueno and N. Koshida: "Light-emissive nonvolatile memory effects in porous silicon diodes"Appl. Phys. Lett.. 74. 93-95 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] B. Gelloz, T. Nakagawa, and N. Koshida: "Enhancing the external quantum efficiency of porous silicon LEDs beyond 1% by a postanodization electrochemical oxidation"Mat. Res. Soc. Symp. Proc.. 536. 15-20 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] N. Koshida, T. Nakajima, M. Yoshiyama, K. Ueno, T. Nakagawa and H. Shinoda: "Ultrasound emissioin from porous silicon : efficient thermo-acoustic function as a depleted nanocrystalline system"Mat. Res. Soc. Symp. Proc.. 536. 105-110 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H. Mizuno, N. Koshida: "Enhancement in efficiency and stability of oxide-free blue emission from porous silicon by surface passivation"Mat. Res. Soc. Symp. Proc.. 536. 179-284 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H. Shinoda, T. Nakajima, K. Ueno, and N. Koshida: "Thermally induced ultrasonic emission from porous silicon"Nature. 400. 853-855 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] N. Koshida, X. Sheng, and T. Komoda: "Quasiballistic electron emission from porous silicon diodes"Appl. Surf. Sci.. 146. 371-376 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] N. Koshida, K. Ueno, and X. Sheng: "Field-induced functions of porous Si as a confined system"J. Luminescence. 80. 37-42 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M. Takahashi and N. Koshida: "Fabrication and characteristics of three-dimensionally buried porous silicon optical waveguides"J. Appl. Phys.. 86. 5274-5278 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T. Komoda, X. Sheng, and N. Koshida: "Mechanism of efficient and stable surface-emitting cold cathode based on porous polycrystalline silicon films"J. Vac. Sci. Technol. B. 17. 1076-1079 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] B. Gelloz and N. Koshida: "Enhancing efficiency and stability of electroluminescence of porous silicon using electrochemical techniques"Proc. Int. Symp. On Advanced Luminescent Materials and Quantum Confinement (ECS, 1999). 27-34

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M. Takahashi, Y. Toriumi, T. Matsumoto, Y. Masumoto, and N. Koshida: "Nonlinear refractive index change in porous silicon Fabry-Perot resonators"Proc. Int. Symp. On Advanced Luminescent Materials and Quantum Confinement (ECS, 1999). 35-42

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] N. Koshida and B. Gelloz: "Wet and Dry Porous Silicon, in "Current Opinion in Colloid and Interface Science" Vol 4/4"Ed. L. Brus (Elsevier Science, Oxford, 1999) (Review). 309-313

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A. Kumagai, Y. Kanegawa, Y. Suda, and N. Koshida: "Improvement of porous Si luminescence intensity durability by nitrogen ion irradiation using an ECR ion source"J. Porous Materials. 7. 73-76 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] B. Gelloz, A. Bsiesy, and N. Koshida: "Conduction and luminescent properties of wet porous silicon"J. Porous matl.. 7. 103-106 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] X. Sheng, A. Kojima, T. Komoda, and N. Koshida: "Efficient and ballistic cold electron emission from porous poly-crystalline silicon diodes with a porosity multilayer structure"J. Vac. Sci. Technol. B. 18(in press). (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] N. Takahashi, Y. Toriumi, T. Matsumoto, Y. Masumoto, and N. Koshida: "Significant photoinduced refractive index change observed in porous silicon Fabry-Perot resonators"Appl. Phys. Lett.. 76(in press). (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] B. Gelloz and N. Koshida: "Electroluminescence with high and stable quantum efficiency and low threshold voltage from anodically oxidized thin porous silicon diodes"J. Appl. Phys.. 87(to be publised). (2000)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 2001-10-23  

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