2000 Fiscal Year Annual Research Report

窒化III-V族混晶の電子物性解明と応用に関する研究

Research Project

Project/Area Number	11102005
Research Institution	The University of Tokushima
Principal Investigator	酒井士郎徳島大学, 工学部, 教授 (20135411)
Co-Investigator(Kenkyū-buntansha)	中島貞之丞徳島大学, 工学部, 講師 (20207781) 西野克志徳島大学, 工学部, 講師 (70284312) 直井美貴徳島大学, 工学部, 講師 (90253228)
Keywords	InNAs / 窒化物 / ナローギャップ半導体 / MOCVD / プラズマ / 窒化III-V族混晶 / GaN / 電子物性
Research Abstract	III-V族化合物半導体の中でも、周期律表の第2行に属するN(窒素)原子と他のV族原子を同時に含む混晶半導体(以下、窒化III-V族混晶と呼ぶ)は、極めて特異な性質を持つことが示されている。本研究の目的は、窒化III-V族混晶をプラズマMOCVD法で成長すること、およびそれらの物性を評価してデバイスの高性能化に応用することである。新しい結晶成長装置を導入して12年度より本格的な結晶成長実験が開始した。新しい装置の設計に当たっては、1.2インチ基板2枚の上に同時に成長できるようにする、2.ガスメッシュを使ったリアクターを採用して、基板上空の汚れを除去することでメンテナンスのため装置を分解する回数を少なくする、3.((B)AlGaIn/NPAs)の成長が可能であるようにする、4.基板上空からプラズマ窒素源を取り付けられる構造とする、という工夫を加えた。すべての研究の基礎となるGaNをサファイア上に結晶成長する実験を行い、成長条件を確立した。その後、以下の材料の研究を行った。 A,波長0.4〜0.6μm帯用発光・受光材料、(Al)Ga(In)NP,(Al)Ga(In)Nas B,meVオーダーのバンドギャップエネルギーを持つことが予想される、InNAs,InNSb、 C,半金属的性質が予想される、InNAs(Sb)、 D,特異な磁気的、誘電的性質が予想される、InAs/InN,InSb/InN超格子、 E、すべての混晶のバンド構造を擬ポテンシャル法と強結合法で計算する。 A.の研究では、波長範囲を短波長側に拡大して、波長0.3〜0.4μm帯での発光ダイオードの開発、及び波長0.4〜0.6μm帯レーザ発振を目指すこととした。その手法として、As,Pを混晶のエレメントとして使うだけでなく、結晶核発生の制御にも適用し、AlGaInN系デバイスの構造制御にも適用できることを見出した。Bの研究では、従来装置を用いた実験を行い、窒素組成13%のInNAsの成長が確認された。平成13年度より新型装置による結晶成長を開始する。C,Dの本格的な実験は、13年度から開始する。Eの研究では、平成12年度は、擬ポテンシャル法を用いた手法によりGaNP,InNAsのバンド図の計算を計算を行った。また、ヘテロ接合での電子分布の計算を行った。

Research Products
(33 results)

All Other

All Publications (33 results)

[Publications] T.Wang: "A new method for a great reduction of dislocation density in a GaN layer on a sapphire substrate"J.Crystal Growth. 213. 188-192 (2000)
[Publications] T.Wang: "The influence of buffer layer and growth temperature on the quality of undoped GaN layer grown on sapphire substrate by MOCVD"Appl.Phys.Lett. 76・16. 2220-2222 (2000)
[Publications] T.Wang: "Magneto-transport studies of AlGaN/GaN heterostructures grown on sapphire substrates : Effective mass and scattering time"Appl.Phys.Lett. 76・19. 1-3 (2000)
[Publications] T.Wang: "Effect of silicon-doping on the optical and transport properties of InGaN/GaN multiple quantum well structures"Appl.Phys.Lett. 76・13. 1737-1739 (2000)
[Publications] S.H.Chung: "The effect of oxygen on the activation of Mg acceptor in GaN epilayers grown by MOCVD"Jpn.J.Appl.Phys.. 39・8. 4749-4750 (2000)
[Publications] R.S.Qhalid Fareed: "Structural studies on MOCVD grown GaN and AlGaN using atomic force microscopy"Mater.Chem.& Phys. 64. 260-264 (2000)
[Publications] M.Lachab: "Selective Fabrication of InGaN Nanostructures by the Focused Ion Beam/Metalorganic Chemical Vapor Deposition Process"J.Appl.Phys.. 87・2. 1374-1378 (2000)
[Publications] M.Lachab: "Characterization of Mg-doped GaN Grown by Metaloragnic Chemical Vapor deposition"Solid State Electr. 44. 1669-1677 (2000)
[Publications] D.Basak: "Reactive ion etching of GaN using BCl3, BCl3/Ar and BCl3/N2 gas plasmas"Solid-state Electronics. 44. 725-728 (2000)
[Publications] D.Basak: "Characterization of RIE etched surface of GaN using methane gas with chlorine plasma"J.Vac.Sci.Technol.B. 18・5. 2491-2494 (2000)
[Publications] H.Naoi,: "Heteroepitaxial growth of InAs by low-pressure metalorganic chemical vapor deposition employing in situ generated arsine radicals"Journal of Crystal Growth. 219. 481-484 (2000)
[Publications] J.Bai: "Influence of the quantum-well thickness on the radiative recombination of InGaN/GaN quantum well structures"J.Apl.Phys.. 88・8. 4729-4733 (2000)
[Publications] S.Sakai: "A New Method of Reducing Dislocation Density in GaN Layer Grown on Sapphire Substrate by MOVPE"J.Crystal Growth. 221. 334-337 (2000)
[Publications] 酒井: "LEDの動作原理と材料"デスプレイアンドイメージング. 8. 103-113 (2000)
[Publications] S.Juodkazis: "Annealing of GaN-InGaN multi-quantum wells : Correlation between the bandgap and yellow photoluminescence"Jpn.J.Appl.Phys.. 39・2A. 393-396 (2000)
[Publications] 酒井: "GaN系結晶のバルクおよびエピタキシャル成長"日本結晶成長学会誌. 27・4. 194-202 (2000)
[Publications] Y.Yamada: "Optical properties of bound excitons and biexcitons in GaN (Invited)"IEICE Trans.Electron.. E83-C,No.4. 605-611 (2000)
[Publications] T.Sugahara: "Role of dislocation in InGaN/GaN quantum wells grown on bulk GaN and sapphire substrates (Invited)"IEICE Trans.Electron.. E83-C,No.4. 598-604 (2000)
[Publications] T.Sawada: "Electrical properties of metal/GaN and SiO2/GaN interfaces and effects of thermal annealing"Appl.Surface Sci.. 159-160. 449-455 (2000)
[Publications] S.Sakai: "Indium silicon co-doping in AlGaN/GaN multiple quantum wells"IPAP Conf.Ser., Proc.Of Int.Conf.On Nitride Semiconductors. 1. 637-639 (2000)
[Publications] Y.Lacroix: "In-Situ Etch-Layer Monitoring of GaN Based Laser Diode Structure"IPAP Conf.Ser., Proc.Of Int.Conf.On Nitride Semiconductors. 1. 782-785 (2000)
[Publications] T.Wang: "The Investigation on the Emission Mechanism of InGaN/GaN Quantum Well Structure"IPAP Conf.Ser., Proc.Of Int.Conf.On Nitride Semiconductors. 1. 524-527 (2000)
[Publications] T.Sawada: "Influence of Inhomogeneous Barrier on I-V Characteristics of Metal/GaN Schottky Diode"IPAP Conf.Ser., Proc.Of Int.Conf.On Nitride Semiconductors. 1. 801-804 (2000)
[Publications] Y.Lacroix: "Cracking of GaN on Sapphire from Induced Non-Uniformity in Residual Stress"IPAP Conf.Ser., Proc.Of Int.Conf.On Nitride Semiconductors. 1. 479-481 (2000)
[Publications] T.Wang: "Comparison of the Optical Properties in InGaN/GaN Quantum Well Structures Grown on (0001) and (11-20) Sapphire Substrates"IPAP Conf.Ser., Proc.Of Int.Conf.On Nitride Semiconductors. 1. 382-385 (2000)
[Publications] K.Shiojima: "Large Schottky Barriers and Memory Capability for Ni Contacts Formed on Low Mg-Doped p-GaN"IPAP Conf.Ser., Proc.Of Int.Conf.On Nitride Semiconductors. 1. 829-832 (2000)
[Publications] Y.Nakanishi: "Photoluminescence Properties of Eu-doped GaN by Ion Implantation"IPAP Conf.Ser., Proc.Of Int.Conf.On Nitride Semiconductors. 1. 486-489 (2000)
[Publications] H.X.Wang: "The Influence of the Low-Temperature Buffer-Layer on Substrate-Induced Biaxial Compressive Stress in a GaN Film on a Sapphire Substrate"IPAP Conf.Ser., Proc.Of Int.Conf.On Nitride Semiconductors. 1. 144-146 (2000)
[Publications] S.Nakajima: "Electronic Structures of GaNP and InNAs Ordered Alloys Calculated by the Pseudopotential Method"IPAP Conf.Ser., Proc.Of Int.Conf.On Nitride Semiconductors. 1. 441-443 (2000)
[Publications] J J Harris: "Phase diagram for the quantum Hall effect in a high mobility GaN/AlGaN heterojunction"J Phys Cond.Matt. 13. L1-L6 (2001)
[Publications] K W Lee: "Investigation of phonon emission processes in an AlGaN/GaN heterostructureat low temperature"Appl.Phys.Lett. (in press). (2001)
[Publications] K W Lee: "Relationship between classical and quantum lifetimes in AlGaN/GaN heterojunctions"Semicond Sci Technol. (in press). (2001)
[Publications] 酒井他: "III族窒化物半導体"倍風館. 313 (1999)

2000 Fiscal Year Annual Research Report

窒化III-V族混晶の電子物性解明と応用に関する研究

Principal Investigator

酒井 士郎 徳島大学, 工学部, 教授 (20135411)

Research Products

[Publications] T.Wang: "A new method for a great reduction of dislocation density in a GaN layer on a sapphire substrate"J.Crystal Growth. 213. 188-192 (2000)

[Publications] T.Wang: "The influence of buffer layer and growth temperature on the quality of undoped GaN layer grown on sapphire substrate by MOCVD"Appl.Phys.Lett. 76・16. 2220-2222 (2000)

[Publications] T.Wang: "Magneto-transport studies of AlGaN/GaN heterostructures grown on sapphire substrates : Effective mass and scattering time"Appl.Phys.Lett. 76・19. 1-3 (2000)

[Publications] T.Wang: "Effect of silicon-doping on the optical and transport properties of InGaN/GaN multiple quantum well structures"Appl.Phys.Lett. 76・13. 1737-1739 (2000)

[Publications] S.H.Chung: "The effect of oxygen on the activation of Mg acceptor in GaN epilayers grown by MOCVD"Jpn.J.Appl.Phys.. 39・8. 4749-4750 (2000)

[Publications] R.S.Qhalid Fareed: "Structural studies on MOCVD grown GaN and AlGaN using atomic force microscopy"Mater.Chem.& Phys. 64. 260-264 (2000)

[Publications] M.Lachab: "Selective Fabrication of InGaN Nanostructures by the Focused Ion Beam/Metalorganic Chemical Vapor Deposition Process"J.Appl.Phys.. 87・2. 1374-1378 (2000)

[Publications] M.Lachab: "Characterization of Mg-doped GaN Grown by Metaloragnic Chemical Vapor deposition"Solid State Electr. 44. 1669-1677 (2000)

[Publications] D.Basak: "Reactive ion etching of GaN using BCl3, BCl3/Ar and BCl3/N2 gas plasmas"Solid-state Electronics. 44. 725-728 (2000)

[Publications] D.Basak: "Characterization of RIE etched surface of GaN using methane gas with chlorine plasma"J.Vac.Sci.Technol.B. 18・5. 2491-2494 (2000)

[Publications] H.Naoi,: "Heteroepitaxial growth of InAs by low-pressure metalorganic chemical vapor deposition employing in situ generated arsine radicals"Journal of Crystal Growth. 219. 481-484 (2000)

[Publications] J.Bai: "Influence of the quantum-well thickness on the radiative recombination of InGaN/GaN quantum well structures"J.Apl.Phys.. 88・8. 4729-4733 (2000)

[Publications] S.Sakai: "A New Method of Reducing Dislocation Density in GaN Layer Grown on Sapphire Substrate by MOVPE"J.Crystal Growth. 221. 334-337 (2000)

[Publications] 酒井: "LEDの動作原理と材料"デスプレイアンドイメージング. 8. 103-113 (2000)

[Publications] S.Juodkazis: "Annealing of GaN-InGaN multi-quantum wells : Correlation between the bandgap and yellow photoluminescence"Jpn.J.Appl.Phys.. 39・2A. 393-396 (2000)

[Publications] 酒井: "GaN系結晶のバルクおよびエピタキシャル成長"日本結晶成長学会誌. 27・4. 194-202 (2000)

[Publications] Y.Yamada: "Optical properties of bound excitons and biexcitons in GaN (Invited)"IEICE Trans.Electron.. E83-C,No.4. 605-611 (2000)

[Publications] T.Sugahara: "Role of dislocation in InGaN/GaN quantum wells grown on bulk GaN and sapphire substrates (Invited)"IEICE Trans.Electron.. E83-C,No.4. 598-604 (2000)

[Publications] T.Sawada: "Electrical properties of metal/GaN and SiO2/GaN interfaces and effects of thermal annealing"Appl.Surface Sci.. 159-160. 449-455 (2000)

[Publications] S.Sakai: "Indium silicon co-doping in AlGaN/GaN multiple quantum wells"IPAP Conf.Ser., Proc.Of Int.Conf.On Nitride Semiconductors. 1. 637-639 (2000)

[Publications] Y.Lacroix: "In-Situ Etch-Layer Monitoring of GaN Based Laser Diode Structure"IPAP Conf.Ser., Proc.Of Int.Conf.On Nitride Semiconductors. 1. 782-785 (2000)

[Publications] T.Wang: "The Investigation on the Emission Mechanism of InGaN/GaN Quantum Well Structure"IPAP Conf.Ser., Proc.Of Int.Conf.On Nitride Semiconductors. 1. 524-527 (2000)

[Publications] T.Sawada: "Influence of Inhomogeneous Barrier on I-V Characteristics of Metal/GaN Schottky Diode"IPAP Conf.Ser., Proc.Of Int.Conf.On Nitride Semiconductors. 1. 801-804 (2000)

[Publications] Y.Lacroix: "Cracking of GaN on Sapphire from Induced Non-Uniformity in Residual Stress"IPAP Conf.Ser., Proc.Of Int.Conf.On Nitride Semiconductors. 1. 479-481 (2000)

[Publications] T.Wang: "Comparison of the Optical Properties in InGaN/GaN Quantum Well Structures Grown on (0001) and (11-20) Sapphire Substrates"IPAP Conf.Ser., Proc.Of Int.Conf.On Nitride Semiconductors. 1. 382-385 (2000)

[Publications] K.Shiojima: "Large Schottky Barriers and Memory Capability for Ni Contacts Formed on Low Mg-Doped p-GaN"IPAP Conf.Ser., Proc.Of Int.Conf.On Nitride Semiconductors. 1. 829-832 (2000)

[Publications] Y.Nakanishi: "Photoluminescence Properties of Eu-doped GaN by Ion Implantation"IPAP Conf.Ser., Proc.Of Int.Conf.On Nitride Semiconductors. 1. 486-489 (2000)

[Publications] H.X.Wang: "The Influence of the Low-Temperature Buffer-Layer on Substrate-Induced Biaxial Compressive Stress in a GaN Film on a Sapphire Substrate"IPAP Conf.Ser., Proc.Of Int.Conf.On Nitride Semiconductors. 1. 144-146 (2000)

[Publications] S.Nakajima: "Electronic Structures of GaNP and InNAs Ordered Alloys Calculated by the Pseudopotential Method"IPAP Conf.Ser., Proc.Of Int.Conf.On Nitride Semiconductors. 1. 441-443 (2000)

[Publications] J J Harris: "Phase diagram for the quantum Hall effect in a high mobility GaN/AlGaN heterojunction"J Phys Cond.Matt. 13. L1-L6 (2001)

[Publications] K W Lee: "Investigation of phonon emission processes in an AlGaN/GaN heterostructureat low temperature"Appl.Phys.Lett. (in press). (2001)

[Publications] K W Lee: "Relationship between classical and quantum lifetimes in AlGaN/GaN heterojunctions"Semicond Sci Technol. (in press). (2001)

[Publications] 酒井 他: "III族窒化物半導体"倍風館. 313 (1999)

酒井士郎徳島大学, 工学部, 教授 (20135411)

[Publications] 酒井他: "III族窒化物半導体"倍風館. 313 (1999)