2000 Fiscal Year Annual Research Report

光励起及び結合長制御不純物共添加による超低抵抗p型III族窒化物の作製

Research Project

Project/Area Number	12875006
Research Institution	Meijo University
Principal Investigator	赤崎勇名城大学, 理工学部, 教授 (20144115)
Co-Investigator(Kenkyū-buntansha)	天野浩名城大学, 理工学部, 助教授 (60202694)
Keywords	III族窒化物半導体 / p型 / アクセプタ不純物 / 有機金属化合物気相成長法 / コドープ
Research Abstract	GaN系III族窒化物半導体は、サファイアを基板とする場合、本申請者のグループが1986年に開発した成長モード制御法が一般化している。この結晶成長法が基礎となり、伝導性制御が可能となり、1989年には不可能とまで云われたp型結晶及びpn接合が実現した。現在、有機金属化合物気相成長法によりGaNにおいて、室温での抵抗率数Ωcm、自由正孔濃度10^<18>cm^<-3>台のp型伝導性結晶が再現性良く得られている。n型結晶は抵抗率10^<-3>Ωcm以下、自由電子濃度10^<19>cm^<-3>台であり、p型結晶の電気的特性は、今だ十分な水準とは云えない。また、よりバンドギャップの大きいAlGaNに至っては、AlNモル分率0.3を超えると、p型伝導性を生じさせるのは現状では極めて困難である。アクセプタ不純物としてMgが用いられているが、1.水素により不活性化すること、2.活性化エネルギーが大きいこと、が問題である。1.については、成長後低加速電子線照射処理などにより、ある程度脱水素化することは可能であるが、2.については本質的な問題である。本研究では、これらの問題の解決を探る方法を検討する。ドナーであるシリコンをコドープして特性を評価したが、p型の正孔濃度がN_A-N_Dに従い、ドープしたシリコン濃度に従って減少するという、極常識的な結果であった。理論の中には、Mgの形成するアクセプタ準位の形成機構を考慮してコドープの効果を論ずるものも見受けられるが、本実験からは、Mgアクセプタの形成は、水素原子様であり、単純であると推測された。AlGaN中へのMgのドーピングに関しては、二次元正孔形成の可能性が見出され、今後の研究の発展が期待される。

Research Products

(31 results)

All Other

All Publications (31 results)

[Publications] S.Yamaguchi,M.Kariya,S.Nitta,H.Amano and I.Akasaki: "The Effect of Isoelectronic In-Doping on the Structural and Optical Properties of (Al) GaN Grown by Metalorganic Varpor Phase Epitaxy"Jpn.J.Appl.Phys.. 39. 2385-2388 (2000)
[Publications] C.Wetzel,H.Amano and I.Akasaki: "Piezoelectric Polarization in GaInN/GaN Heterostructures and Some Consequences for Device Design"Jpn.J.Appl.Phys.. 39. 2425-2427 (2000)
[Publications] C.Pernot,A.Hirano,M.Iwaya,T.Detchprohm,H.Amano and I.Akasaki: "Solar-Blind UV Photodetectors Based on GaN/AlGaN p-i-n Photodiodes"Jpn.J.Appl.Phys.. 39. L387-389 (2000)
[Publications] M.Iwaya,S.Terao,N.Hayashi,T.Kashima,T.Detchprohm,H.Amano,I.Akasaki,A.Hirano and C.Pernot: "High-Quality AlxGa1-xN Using Low Temperature-Interlayer and its Application to UV Detector"MRS Internet J.Nitride Semicond.Res.. 5S1. W1.10 (2000)
[Publications] S.Nitta,T.Kashima,M.Kariya,Y.Yukawa,S.Yamaguchi,H.Amano and I.Akasaki: "Mass Transport, Faceting and Behavior of Dislocations in GaN"MRS Internet J.Nitride Semicond.Res.. 5S1. W2.8 (2000)
[Publications] M.Benamara,L.Weber,J.H.Mazur,W.Swider,J.Washburn,M.Iwaya,I.Akasaki and H.Amano: "The Role of the Multi Buffer Layer Technique on the Structural Quality of GaN"MRS Internet J.Nitride Semicond.Res.. 5S1. W5.8 (2000)
[Publications] I.Akasaki,S.Kamiyama,T.Detchprohm,T.Takeuchi and H.Amano: "Growth of Crack-Free Thick AlGaN Layer and its Application to GaN Based Laser Diodes"MRS Internet J.Nitride Semicond.Res.. 5S1. W6.8 (2000)
[Publications] C.Wetzel,T.Takeuchi,H.Amano and I.Akasaki: "Spectroscopy in Polarized and Piezoelectric AlGaInN Heterostructures"MRS Internet J.Nitride Semicond.Res.. 5S1. W12.4 (2000)
[Publications] M.Tabuchi,Y.Takeda,T.Takeuchi,H.Amano,I.Akasaki: "Characterization of Initial Growth Stage of GaInN Multilayered Structure by X-ray CTR Scattering and X-ray Reflectivity Method"Surface Science Society of Japan. 21. 38-44 (2000)
[Publications] P.N.Hai,W.M.I.Chen,A Buyanova,B.Monemar,H.Amano,I.Akasaki: "Ga-related defect in as-grown Zn-doped GaN : An optically detected magnetic-resonance study"Physical Review -Series B-. 62. R10607-10609 (2000)
[Publications] G.Pozina,J.P.Bergman,B.Monemar,T.Takeuchi,H.Amano,I.Akasaki: "Origin of multiple peak photoluminescence in InGaN/GaN multiple quantum wells"Journal of Applied Physics. 88. 2677-2681 (2000)
[Publications] G.Pozina,J.P.Bergman,B.Monemar,T.Takeuchi,H.Amano,I.Akasaki: "Multiple Peak Spectra from InGaN/GaN Multiple Quantum Wells"Physica Status Solidi A Applied Research. 180. 85-90 (2000)
[Publications] M.Iwaya,S.Terao,N.Hayashi,T.Kashima,H.Amano,I.Akasaki: "Realization of crack-free and high-quality thick AlxGal-xN for UV optoelectronics using low-temperature interlayer"Applied Surface Science. 159/160. 405-413 (2000)
[Publications] S.Yamaguchi,M.Kariya,S.Nitta,H.Amano,I.Akasaki: "Strain relief by In-doping and its effect on the surface and on the interface structures in (Al)GaN on sapphire grown by metalorganic vapor-phase epitaxy"Applied Surface Science. 159/160. 414-420 (2000)
[Publications] S.Nitta,M.Kariya,T.Kashima,S.Yamaguchi,H.Amano,I.Akasaki: "Mass transport and the reduction of threading dislocation in GaN"Applied Surface Science. 159/160. 421-426 (2000)
[Publications] M.Tabuchi,K.Hirayama,Y.Takeda,T.Takeuchi,H.Amano,I.Akasaki: "Characterization of initial growth stage of GaInN multi-layered structure by X-ray CTR scattering method"Applied Surface Science. 159/160. 432-440 (2000)
[Publications] T.Sato,M.Iwaya,K.Isomura,T.Ukai,S.Kamiyama,H.Amano,I.Akasaki: "Theoretical Analysis of Optical Transverse-Mode Control on GaN-Based Laser Diodes"IEICE TRANSACTIONS ON ELECTR0NICS E SERIES C. 83. 573-578 (2000)
[Publications] J..P.Bergman,B.Monemar,G.Pozina,B.E.Sernelius,P.O.B.E.Holtz,H.Amano,I.Akasaki: "Radiative Recombination in InGaN/GaN Multiple Quantum Wells"Materials Science Forum. 338/342. 1571-1574 (2000)
[Publications] G.Pozina,J.P.Bergman,B.Monemar,S Yamaguchi,H.Amano,I.Akasaki: "Optical spectroscopy of GaN grown by metalorganic vapor phase epitaxy using indium surfactant"Applied Physics Letters. 76. 3388-3390 (2000)
[Publications] N.Hayashi,S.Kamiyama,T.Takeuchi,M.Iwaya,H.Amano,I.Akasaki,S.Watanabe,Y.Kaneko and N.Yamada,: "Electrical conductivity of low temperature deposited Al0.1Ga0.9N interlayer"Jpn.J.Appl.Phys. 39. 6493-6495 (2000)
[Publications] S.Nitta,T.Kashima,R.Nakamura,M.Iwaya,H.Amano and I.Akasaki,: "Mass Transport of GaN and Reduction of Threading Dislocations"SURFACE REVIEW AND LETTERS. 7. 561-564 (2000)
[Publications] G.Pozina,J.P.Bergman,and B.Monemar,M.Iwaya,S.Nitta,H.Amano,and I.Akasaki: "InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy with mass transport"Appl.Phys.Lett.. 77. 1638-1640 (2000)
[Publications] C.Wetzel,T.Takeuchi,H.Amano,I.Akasaki: "Quantized states in Ga〜1〜-〜xIn-xN/GaN heterostructures and the model of polarized homogeneous quantum wells"PHYSICAL REVIEW -SERIES B-. 62. R13 302-R13 305 (2000)
[Publications] M.Tabuchi,Y.Takeda,T.Takeuchi,H.Amano,I.Akasaki: "Characterization of Initial Growth Stage of GaInN Multilayered Structure by X-ray CTR Scattering and X-ray Reflectivity Method"JOURNAL-SURFACE SCIENCE SOCIETY OF JAPAN. 21. 38-44 (2000)
[Publications] H.Amano,I.Akasaki: "Effect of Low-temperature Deposited Layer on the Growth of Group-III Nitrides on Sapphire"JOURNAL-SURFACE SCIENCE SOCIETY OF JAPAN. 21. 2-9 (2000)
[Publications] P.N.Hai,W.M.Chen,I.A.Buyanova,B.Monemar,H.Amano,I.Akasaki: "Ga-related defect in as-grown Zn-doped GaN : An optically detecte magnetic-resonance study"PHYSICAL REVIEW -SERIES B-. 62. R10607-R10609 (2000)
[Publications] S.Nitta,T.Kashima,R.Nakamura,M.Iwaya,H.Amano,I.Akasaki: "Mass Transport of GaN and Reduction of Threading Dislocations"SURFACE REVIEW AND LETTERS. 7. 561-564 (2000)
[Publications] S.Yamaguchi,M.Kariya,S.Nitta,T.Kashima,M.Kosaki,Y.Yukawa,H.Amano,I.Akasaki: "Control of crystalline quality of MOVPE-grown GaN and (Al,Ga) N/AlGaN MQW using In-doping and/or N2 carrier gas"JOURNAL OF CRYSTAL GROWTH. 221. 327-331 (2000)
[Publications] M.Wagner,I.A.Buyanova,N.Q.Thinh,W.M.Chen,B.Monemar,J.L.Lindstrom,H.Amano,I.Akasaki: "Magneto-optical studies of the 0.88-eV photoluminescence emission in electron-irradiated GaN "PHYSICAL REVIEW -SERIES B-. 62. 16572-16577 (2000)
[Publications] N.A.Shapiro,Y.Kim,H.Feick,E.R.Weber,P.Perlin,J.W.Yang,I.Akasaki,H.Amano: "Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain"PHYSICAL REVIEW -SERIES B-. 62. R16318-R16321 (2000)
[Publications] C.Wetzel,M.Kasumi,H.Amano,I.Akasaki: "Absorption Spectroscopy and Band Structure in Polarized GaN/Al〜xGa〜1〜xN Quantum Wells"PHYSICA STATUS SOLIDI A APPLIED RESEARCH. 183. 51-60 (2001)

2000 Fiscal Year Annual Research Report

光励起及び結合長制御不純物共添加による超低抵抗p型III族窒化物の作製

Principal Investigator

赤崎 勇 名城大学, 理工学部, 教授 (20144115)

Research Products

[Publications] S.Yamaguchi,M.Kariya,S.Nitta,H.Amano and I.Akasaki: "The Effect of Isoelectronic In-Doping on the Structural and Optical Properties of (Al) GaN Grown by Metalorganic Varpor Phase Epitaxy"Jpn.J.Appl.Phys.. 39. 2385-2388 (2000)

[Publications] C.Wetzel,H.Amano and I.Akasaki: "Piezoelectric Polarization in GaInN/GaN Heterostructures and Some Consequences for Device Design"Jpn.J.Appl.Phys.. 39. 2425-2427 (2000)

[Publications] C.Pernot,A.Hirano,M.Iwaya,T.Detchprohm,H.Amano and I.Akasaki: "Solar-Blind UV Photodetectors Based on GaN/AlGaN p-i-n Photodiodes"Jpn.J.Appl.Phys.. 39. L387-389 (2000)

[Publications] M.Iwaya,S.Terao,N.Hayashi,T.Kashima,T.Detchprohm,H.Amano,I.Akasaki,A.Hirano and C.Pernot: "High-Quality AlxGa1-xN Using Low Temperature-Interlayer and its Application to UV Detector"MRS Internet J.Nitride Semicond.Res.. 5S1. W1.10 (2000)

[Publications] S.Nitta,T.Kashima,M.Kariya,Y.Yukawa,S.Yamaguchi,H.Amano and I.Akasaki: "Mass Transport, Faceting and Behavior of Dislocations in GaN"MRS Internet J.Nitride Semicond.Res.. 5S1. W2.8 (2000)

[Publications] M.Benamara,L.Weber,J.H.Mazur,W.Swider,J.Washburn,M.Iwaya,I.Akasaki and H.Amano: "The Role of the Multi Buffer Layer Technique on the Structural Quality of GaN"MRS Internet J.Nitride Semicond.Res.. 5S1. W5.8 (2000)

[Publications] I.Akasaki,S.Kamiyama,T.Detchprohm,T.Takeuchi and H.Amano: "Growth of Crack-Free Thick AlGaN Layer and its Application to GaN Based Laser Diodes"MRS Internet J.Nitride Semicond.Res.. 5S1. W6.8 (2000)

[Publications] C.Wetzel,T.Takeuchi,H.Amano and I.Akasaki: "Spectroscopy in Polarized and Piezoelectric AlGaInN Heterostructures"MRS Internet J.Nitride Semicond.Res.. 5S1. W12.4 (2000)

[Publications] M.Tabuchi,Y.Takeda,T.Takeuchi,H.Amano,I.Akasaki: "Characterization of Initial Growth Stage of GaInN Multilayered Structure by X-ray CTR Scattering and X-ray Reflectivity Method"Surface Science Society of Japan. 21. 38-44 (2000)

[Publications] P.N.Hai,W.M.I.Chen,A Buyanova,B.Monemar,H.Amano,I.Akasaki: "Ga-related defect in as-grown Zn-doped GaN : An optically detected magnetic-resonance study"Physical Review -Series B-. 62. R10607-10609 (2000)

[Publications] G.Pozina,J.P.Bergman,B.Monemar,T.Takeuchi,H.Amano,I.Akasaki: "Origin of multiple peak photoluminescence in InGaN/GaN multiple quantum wells"Journal of Applied Physics. 88. 2677-2681 (2000)

[Publications] G.Pozina,J.P.Bergman,B.Monemar,T.Takeuchi,H.Amano,I.Akasaki: "Multiple Peak Spectra from InGaN/GaN Multiple Quantum Wells"Physica Status Solidi A Applied Research. 180. 85-90 (2000)

[Publications] M.Iwaya,S.Terao,N.Hayashi,T.Kashima,H.Amano,I.Akasaki: "Realization of crack-free and high-quality thick AlxGal-xN for UV optoelectronics using low-temperature interlayer"Applied Surface Science. 159/160. 405-413 (2000)

[Publications] S.Yamaguchi,M.Kariya,S.Nitta,H.Amano,I.Akasaki: "Strain relief by In-doping and its effect on the surface and on the interface structures in (Al)GaN on sapphire grown by metalorganic vapor-phase epitaxy"Applied Surface Science. 159/160. 414-420 (2000)

[Publications] S.Nitta,M.Kariya,T.Kashima,S.Yamaguchi,H.Amano,I.Akasaki: "Mass transport and the reduction of threading dislocation in GaN"Applied Surface Science. 159/160. 421-426 (2000)

[Publications] M.Tabuchi,K.Hirayama,Y.Takeda,T.Takeuchi,H.Amano,I.Akasaki: "Characterization of initial growth stage of GaInN multi-layered structure by X-ray CTR scattering method"Applied Surface Science. 159/160. 432-440 (2000)

[Publications] T.Sato,M.Iwaya,K.Isomura,T.Ukai,S.Kamiyama,H.Amano,I.Akasaki: "Theoretical Analysis of Optical Transverse-Mode Control on GaN-Based Laser Diodes"IEICE TRANSACTIONS ON ELECTR0NICS E SERIES C. 83. 573-578 (2000)

[Publications] J..P.Bergman,B.Monemar,G.Pozina,B.E.Sernelius,P.O.B.E.Holtz,H.Amano,I.Akasaki: "Radiative Recombination in InGaN/GaN Multiple Quantum Wells"Materials Science Forum. 338/342. 1571-1574 (2000)

[Publications] G.Pozina,J.P.Bergman,B.Monemar,S Yamaguchi,H.Amano,I.Akasaki: "Optical spectroscopy of GaN grown by metalorganic vapor phase epitaxy using indium surfactant"Applied Physics Letters. 76. 3388-3390 (2000)

[Publications] N.Hayashi,S.Kamiyama,T.Takeuchi,M.Iwaya,H.Amano,I.Akasaki,S.Watanabe,Y.Kaneko and N.Yamada,: "Electrical conductivity of low temperature deposited Al0.1Ga0.9N interlayer"Jpn.J.Appl.Phys. 39. 6493-6495 (2000)

[Publications] S.Nitta,T.Kashima,R.Nakamura,M.Iwaya,H.Amano and I.Akasaki,: "Mass Transport of GaN and Reduction of Threading Dislocations"SURFACE REVIEW AND LETTERS. 7. 561-564 (2000)

[Publications] G.Pozina,J.P.Bergman,and B.Monemar,M.Iwaya,S.Nitta,H.Amano,and I.Akasaki: "InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy with mass transport"Appl.Phys.Lett.. 77. 1638-1640 (2000)

[Publications] C.Wetzel,T.Takeuchi,H.Amano,I.Akasaki: "Quantized states in Ga〜1〜-〜xIn-xN/GaN heterostructures and the model of polarized homogeneous quantum wells"PHYSICAL REVIEW -SERIES B-. 62. R13 302-R13 305 (2000)

[Publications] M.Tabuchi,Y.Takeda,T.Takeuchi,H.Amano,I.Akasaki: "Characterization of Initial Growth Stage of GaInN Multilayered Structure by X-ray CTR Scattering and X-ray Reflectivity Method"JOURNAL-SURFACE SCIENCE SOCIETY OF JAPAN. 21. 38-44 (2000)

[Publications] H.Amano,I.Akasaki: "Effect of Low-temperature Deposited Layer on the Growth of Group-III Nitrides on Sapphire"JOURNAL-SURFACE SCIENCE SOCIETY OF JAPAN. 21. 2-9 (2000)

[Publications] P.N.Hai,W.M.Chen,I.A.Buyanova,B.Monemar,H.Amano,I.Akasaki: "Ga-related defect in as-grown Zn-doped GaN : An optically detecte magnetic-resonance study"PHYSICAL REVIEW -SERIES B-. 62. R10607-R10609 (2000)

[Publications] S.Nitta,T.Kashima,R.Nakamura,M.Iwaya,H.Amano,I.Akasaki: "Mass Transport of GaN and Reduction of Threading Dislocations"SURFACE REVIEW AND LETTERS. 7. 561-564 (2000)

[Publications] S.Yamaguchi,M.Kariya,S.Nitta,T.Kashima,M.Kosaki,Y.Yukawa,H.Amano,I.Akasaki: "Control of crystalline quality of MOVPE-grown GaN and (Al,Ga) N/AlGaN MQW using In-doping and/or N2 carrier gas"JOURNAL OF CRYSTAL GROWTH. 221. 327-331 (2000)

[Publications] M.Wagner,I.A.Buyanova,N.Q.Thinh,W.M.Chen,B.Monemar,J.L.Lindstrom,H.Amano,I.Akasaki: "Magneto-optical studies of the 0.88-eV photoluminescence emission in electron-irradiated GaN "PHYSICAL REVIEW -SERIES B-. 62. 16572-16577 (2000)

[Publications] N.A.Shapiro,Y.Kim,H.Feick,E.R.Weber,P.Perlin,J.W.Yang,I.Akasaki,H.Amano: "Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain"PHYSICAL REVIEW -SERIES B-. 62. R16318-R16321 (2000)

[Publications] C.Wetzel,M.Kasumi,H.Amano,I.Akasaki: "Absorption Spectroscopy and Band Structure in Polarized GaN/Al〜xGa〜1〜xN Quantum Wells"PHYSICA STATUS SOLIDI A APPLIED RESEARCH. 183. 51-60 (2001)

赤崎勇名城大学, 理工学部, 教授 (20144115)