2000 Fiscal Year Annual Research Report

量子ドット構造による電子物性の制御と次世代エレクトロニクスへの応用

Research Project

Project/Area Number	12CE2004
Research Category	Grant-in-Aid for COE Research
Research Institution	The University of Tokyo
Principal Investigator	榊裕之東京大学, 生産技術研究所, 教授 (90013226)
Co-Investigator(Kenkyū-buntansha)	藤田博之東京大学, 生産技術研究所, 教授 (90134642) 安藤恒也東京大学, 物性研究所, 教授 (90011725) 荒川泰彦東京大学, 生産技術研究所, 教授 (30134638) 平本俊郎東京大学, 大規模集積システム設計教育研究センター, 助教授 (20192718) 平川一彦東京大学, 生産技術研究所, 助教授 (10183097)
Keywords	量子ドット / ナノ構造 / 電子の波動性 / 零次元電子 / 単電子効果 / 量子ドットレーザ / 量子ドットメモリー / 量子ドット検出器
Research Abstract	(1)量子ドット構造の形成と電子状態の解明に関する研究成果 (1-1)InAs系量子ドット:この系については解析と分光計測を進め、ぬれ層の関与する準連続状態やInAsドットを積層化させた系でのシュタルク効果に関する知見を得た。さらに、ドット内における電子フォノン相互作用や、非束縛準位への光学遷移についても明らかにした。 (1-2)TypeII型量子ドット:GaSbドットなど正孔のみが束縛される系について検討を加え新知見を得た。特に、正孔の数と電子の束縛の強さとの関係や量子リング構造の可能性を明らかにした。 (1-3)窒化物系量子ドット:青色発光材料として重要なInGaN系の量子ドットの形成技術を開発し、その電子準位間隔を拡げる手法を探索している。 (1-4)Si系量子ドット:SiMOSFETの量子ポイント・コンタクトに形成されるドットの微細化を進め、実効サイズが4nmで、電子の付加エネルギー250meVを達成した。 (1-5)その他の量子ドット:PbSe/PbEuTeの量子ドットアレーのサイクロトロン共鳴を計測し、その規則性を示した。CdSe/ZnSe量子ドットについて顕著な負の反磁性シフトを観測、起源を考察した。 (2)量子ドットとその関連構造の伝導特性と電子デバイス応用に関する成果 (2-1)Si単電子トランジスタ:室温で大きな振動を示すシリコン単電子トランジスタの作製に成功した。ドットは約4nmで電子一個の付加エネルギーは室温のエネルギーの約10倍である. (2-2)量子ドットと電子の相互作用とメモリー作用:電子伝導チャネルの近傍にInAs系量子ドットを埋め込み、メモリー作用と電子散乱に関して新知見を得た。 (2-3)アンチドットおよびナノチューブ系での電子の局在と伝導:2次元電子系内のアンチドット格子について、ドットのゆらぎに起因する電子の局在、特にその磁場変化について明らかにした。さらに多重結合量子細線系でのウムクラップ散乱の電気抵抗について計算を行った。 (2-4)周期ポテンシャルを含む2次元電子系の伝導と単電子計測:2次元電子系に周期ポテンシャルを加えた系の磁気抵抗を調べ、複合フェルミオンの幾何学共鳴および電荷密度波相に関し知見を得た。また、磁場変調を加えた系で電子電子散乱を検討した。 (3)量子ドットの光学物性と光デバイス探索に関する研究成果 (3-1)量子ドットの近接場分 … More 光とレーザ発振:ドット内の励起子の振舞いを明らかにするために、近接場フェムト秒分光を行い、励起子の位相緩和に関する新知見を得た。また、InGaN系ドットレーザを解析し、その利点がGaAs系よりも大きくなることを示した。 (3-2)量子ドットにおける光吸収と赤外検出器応用:ドットの光イオン化スペクトルを解析し、電子が基底準位より、連続準位へ遷移する際に、2次元と3次元状態の境界付近で、干渉効果を受けることを見出した。量子ドットと2次元チャネルを用いた赤外光検出器において、キャリア寿命の作用を検討し、量子井戸検出器に比べて、4.2Kで約千倍、77Kでも10倍以上の感度となることを示した。 (3-3)量子構造における電気光学効果とその応用:積層ドットにおけるシュタルク効果の解析を進め、スペクトル上の特色を明らかにした。また、電子と正孔の分離するTypeII形のドットにおける電界閉じ込めの作用や、ピエゾ電界による電子と正孔の分離についても新知見を得た。 (3-4)量子構造のフォトリフラクティブ効果とその応用:InGaAs系量子井戸のフォトリフラクティブ効果を調べ、1%程の屈折率変化と高い回折効率を得た。また、シュタルク効果を併用する素子を試作した。 (4)ナノプローブによる構造評価と新規ナノ物質の探索 (4-1)ナノ探針のマイクロマシンによる形成:0.1nmの精度で調節し、原子オーダの現象や電界を制御するために、マイクロマシンでSTM用のプローブ対を、シリコンチップ上に形成した。 (4-2)ナノ探針によるドットの局所評価:前述の近接場分光に加えて、導電性の探針による計測を進め、自己形成InAsドットにおいて、局所キャパシタンスやコンダクタンスを計測した。量子ドットへの電荷注入による信号を検出した。 (4-3)酸化物系ナノ構造の形成と物性探索:クロム酸化物超薄膜を作成し、膜厚に依存して磁気的転移および絶縁体-金属転移を見いだした.また、LaMnO3系酸化物でMnサイトをFeやNiイオンで置換した磁気特性や電気特性を調べ、LaサイトをCaやSrなどで置換しなくても巨大磁気抵抗を起こすことがわかった。 (4-4)極微磁性体の形成と物性探索:極微の強磁性体、超常磁性,形状異方性、磁気結晶異方性の競合で磁気容易軸が決まる。サファイア上に100nmのNi微粒子を作り、300Kでは容易軸が面内となり、120Kでは垂直方向を向くことを発見した。 Less

Research Products

(61 results)

All Other

All Publications (61 results)

[Publications] K.Tanaka: "Anomalous conductance quantization in a novel quantum point contact with periodic (〓〜16nm) potential modulation"Physica E. 6. 558-560 (2000)
[Publications] Ph.Lelong: "Fano profile in intersubband transitions in InAs quantum dots"Physica E. 7. 174-178 (2000)
[Publications] I.Tanaka: "Surface potential measurement of self-assembled InAs dots by scanning Maxwell stress microscopy"Physica E. 7. 373-376 (2000)
[Publications] H.Kim: "Quantum storage effects in n-AlGaAs/GaAs heterojunction FETs with embedded InAs QDs and localized states induced by Ga-FIB implantation"Physica E. 7. 435-439 (2000)
[Publications] Ph.Lelong: "Enhancement of the Coulomb correlations in type-II quantum dots"Physica E. 7. 393-397 (2000)
[Publications] S.Tsujino: "Peak position of the intersubband absorption spectrum of quantum wells with controlled electron concentrations"Phys.Rev.B. 65. 1560 (2000)
[Publications] K.Hirakawa: "Far-infrared photoresponse of the magnetoresistance of the two-dimensional electron systems in the integer quantized Hall regime"Physical Review B. (印刷中).
[Publications] Ph.Lelong: "Fano profiles in bound-to-continuum intersubband transitions in negatively charged InAs quantum dots"Proceedings of the 25th International Conference on the Physics of Semiconductors . (印刷中).
[Publications] Y.Shimada: "THz Emission due to Miniband Transport in GaAs/AlGaAs Superlattices""Japanese Journal of Applied Physics. (印刷中).
[Publications] K.Hiakawa: "Infrared optical conductivity of Inl-xMnxAs"Physica E. (印刷中).
[Publications] S.Katsumoto: "Magnetism and metal-insulator transition in III-V based diluted magnetic semiconductors"Journal of Materials Science and Engineering B. (印刷中).
[Publications] S.-W.Lee: "Modulation-doped quantum dot infrared photodetectors using self-assembled InAs quantum dots"Physica E. 7. 499-502 (2000)
[Publications] S.-W.Lee: "Mid-Infrared Photodetector Using Self-Assembled InAs Quantum Dots Embedded In Modulation Doped GaAs Quantum Wells"MRS Symposia Proceedings, Infrared Applications of Semiconductors II. Vol.607. 147-152 (2000)
[Publications] Y.Kawano: "Suppression of electron-hole-pair recombination in edge states in quantum Hall regimes"Physica E. (印刷中).
[Publications] H.M.Bu: "Random telegraph signals and low-frequency noise in n-metal-oxide-semiconductor field-effect transistors with ultranarrow channels"Applied Physics Letters. Vol.76,No.22. 3259-3261 (2000)
[Publications] 平本俊郎: "電子1個で動くトランジスタ"電気学会誌. Vol.120,No.8/9. 518-521 (2000)
[Publications] X.L.Yuan: "Effects of interface traps in silicon-quantum-dots-based memory structures"Physica E. Vol.8,No.2. 189-193 (2000)
[Publications] H.Majima: "Experimental Evidence for Quantum Mechanical Narrow Channel Effect in Ultra-Narrow MOSFETs"IEEE Electron Devices Letters. Vol.21,No.8. 396-398 (2000)
[Publications] Toshiro Hiramoto: "To fill the gap between Si-ULSI and nanodevices"International Journal of High Speed Electronics and Systems (I JHSES). Vol.10,No.1. 197-203 (2000)
[Publications] Y.Shi: "Dynamics of Tunneling into Charge-Tunable Si Quantum Dots"Superlattices and Microstructures. Vol.28,No.5/6. 387-392 (2000)
[Publications] M.Saitoh: "Large Electron Addition Energy above 250 meV in the Silicon Quantum Dot in a Single Electron Transistor(印刷中)"Japanese Journal of Applied Physics. Vol.40,No.3B. (2001)
[Publications] H.N.Wang: "Device Parameters for Electron Number Control in MOSFET Memories Based on Silicon Nanocrystal Floating Dots(印刷中)"Japanese Journal of Applied Physics. Vol.40,No.3B. (2001)
[Publications] K.Asano: "Two-Component Cyclotron Resonance in Bilayer Quantum Hall Systems"Physica E. 6. 636-639 (2000)
[Publications] S.Uryu: "Aharonov-Bohm Oscillation of Localization in Antidot Lattices"Physica E. 6. 503-506 (2000)
[Publications] T.Nakanishi: "Conductance Quantization in the Presence of Huge and Short-Range Potential in Carbon Nanotubes"Physica E. 6. 872-875 (2000)
[Publications] H.Suzuura: "Huge Magneto-Resistance by Phonon Scattering in Carbon Nanotubes"Physica E. 6. 864-867 (2000)
[Publications] K.Asano: "Electron-Electron Interaction Effects in Integer Quantum Hall Photoluminescence"Physica E. 7. 604-607 (2000)
[Publications] S.Uryu: "Magnetic-Field Dependence of Localization in Antidot Lattices"Prog.Theor.Phys.Suppl.. 138. 521-522 (2000)
[Publications] T.Ando: "Theory of Transport in Carbon Nanotubes"Semicond.Sci. & Technol.. 15. R13-R27 (2000)
[Publications] T.Ando: "Chaotic Transport in Antidot Lattices"J.Electronic Materials. 29. 557-564 (2000)
[Publications] M.Igami: "Effects of Lattice Vacancy in Carbon Nanotubes-Conductance Quantization-"Mol.Cryst.Liq.Crys. 340. 719-724 (2000)
[Publications] H.Matsumura: "Topological Effects on Conductance of Nanotubes"Mol.Cryst.Liq.Crys. 340. 725-730 (2000)
[Publications] H.Suzuura: "Chirality-Dependent Resistivity in Carbon Nanotubes"Mol.Cryst.Liq.Crys. 340. 731-736 (2000)
[Publications] M.Igami: "Effect of Lattice Vacancy in Conductance of Carbon Nanotubes"Physica B. 284-288. 1746-1747 (2000)
[Publications] T.Ando: "Spin-Orbit Interaction in Carbon Nanotubes"J.Phys.Soc.Jpn.. 69. 1757-1763 (2000)
[Publications] T.Nakanishi: "Contact between Carbon Nanotube and Metallic Electrode"J.Phys.Soc.Jpn.. 69. 2175-2181 (2000)
[Publications] T.Yasuhira: "Giant Faraday Rotation Spectra of Zn_<1-x>Mn_xSe Observed in High Magnetic Fields up to 150T"Physical Review B. 61. 4685-4688 (2000)
[Publications] H.Arimoto: "Anomalous Hysteretic Phenomena in Cyclotron Resonance Spectra of GaAs/AlGaAs Quantum Well under Tilted Magnetic Fields of Short Puse up to 150T"Physica E. 6. 191-194 (2000)
[Publications] H.Arimoto: "Hysteretic Phenomena in Spin-Split Cyclotron Resonance Spectra of InAs/AlSb Single Quantum Well under Short Pulse of High Magnetic Fields up to 150T"Proc.9th Int. Conf.Narrow Gap Semiconductors (Berlin,1999)ed.N.Puhlman,H.U.Mueller and M.von Ortenberg (Humboldt University,2000). 10-15 (2000)
[Publications] R.K.Hayden: "The transition to Chaos in a Wide Quantum Well"Physica E. 7. 735-739 (2000)
[Publications] Y.H.Matsuda: "Cyclotron Resonance in Cd_<1-x>Mn_xTe : I at Very High Magnetic Fields"Journal of Crystal Growth. 214/215. 400-404 (2000)
[Publications] T.Devreese: "High Magnetic Field Cyclotron Resonance in CdS: Explanation of the Non-Monotonic Temperature Dependence of the Cyclotron Mass"Journal of Crystal Grow. 214/215. 465-468 (2000)
[Publications] V.F.Aguekian: "Photoluminescence of Free and Localized Excitons from CdTe/CdMnTe Quantum Well Structure in the Presence of a Strong External Magnetic Field"Journal of Luminescence. 87/89. 506-508 (2000)
[Publications] T.Goto: "Exciton Absorption Spectra of MoS_2Crystals in High Magnetic Fields up to 150T"Journal of Phvsics: Condensed Matter. 12. 6719-6723 (2000)
[Publications] M.Matsumoto: "Study of the adsorption structure of NO on Pt(111) by STM and HREELS"Surf.Sci.. 454-456. 101-105 (2000)
[Publications] K.Fukutani: "Electronic Structure of a Pt-Ge Surface Alloy"Surf.Sci.. 464. 48-56 (2000)
[Publications] S.Kishimoto: "Observation of nuclear excitation by electron transition in 197Au with synchrotron X rays and an avalanche photodiode"Phys.Rev.Lett.. 85. 1831-1834 (2000)
[Publications] M.Wilde: "Depth-resolved analysis of subsurface hydrogen absorbed by Pd(100)"Surf.Sci.. (in press).
[Publications] T.Itoyama: "Adsorption and photoexcitation of NO on Ag/Pt(111)"Surf.Sci.. (in press).
[Publications] R.Muhida: "Molecular orientation dependence of o-p H2 conversion on a 3d impurity sitting on a metal oxide surface"Surf.Sci.. (in press).
[Publications] Y.Miwa: "The Effect of Fe Doping on LaMnO_3"Transactions of the Materials Research Society of Japan. 25. 1057-1060 (2000)
[Publications] K.Oda: "Electromagnetic Properties of Lanthanum Manganese Oxides Doped with Iron"Hyperfine Interactions. (in press).
[Publications] N.Miura: "New Megagauss Laboratory of ISSP at Kashiwa"Physica B. (刊行予定). (2001)
[Publications] K.Jarasiunas: "Characterization of proton-irradiated InGaAs/GaAs multiple quantum well structures by nonresonant trantsient four-wave mixing technique"Japanese Journal of Applied Physics. Vol.39No.10. 5781-5787 (2000)
[Publications] S.Iwamoto: "Photorefractive multiple quantum wells at 1064nm"Optics Letters. Vol.26No.1. 22-24 (2000)
[Publications] 志村努: "半導体多重量子井戸構造を用いたフォトリフラクティブ光デバイス"光学. Vol.29No.8. 496-497 (2000)
[Publications] T.Takahashi: "Kelvin Probe Force Microscopy on InAs thin Film on (110) GaAs Substrates"Jpn.J.Appl.Phys.. 39. 3721-3723 (2000)
[Publications] H.Yamamoto: "Local Capacitance Measurements on InAs dot-covered GaAs Surfaces by Scanning Capacitance Microscopy"Appl.Phys.Lett. 77. 1994-1996 (2000)
[Publications] S.Ono: "Kelvin Probe Force Microscopy on InAs Thin Films Grown on GaAs Giant Step Structures formed on (110) GaAs Vicinal Substrates"Appl.Phys.Lett. 78. 1086-1088 (2000)
[Publications] N.Nakaoka: "Partitioned Real-Space Density Functional Calculations of Bielectrode Systems under Bias Voltage and Electric Field"Phys.Rev.Lett. (投稿中).
[Publications] 遠藤潤二: "電子干渉計測によるナノ構造と電界分布の可視化の試み"電気学会E部門誌. Vol.120No.6. 285-291 (2000)

2000 Fiscal Year Annual Research Report

量子ドット構造による電子物性の制御と次世代エレクトロニクスへの応用

Principal Investigator

榊 裕之 東京大学, 生産技術研究所, 教授 (90013226)

Research Products

[Publications] K.Tanaka: "Anomalous conductance quantization in a novel quantum point contact with periodic (〓〜16nm) potential modulation"Physica E. 6. 558-560 (2000)

[Publications] Ph.Lelong: "Fano profile in intersubband transitions in InAs quantum dots"Physica E. 7. 174-178 (2000)

[Publications] I.Tanaka: "Surface potential measurement of self-assembled InAs dots by scanning Maxwell stress microscopy"Physica E. 7. 373-376 (2000)

[Publications] H.Kim: "Quantum storage effects in n-AlGaAs/GaAs heterojunction FETs with embedded InAs QDs and localized states induced by Ga-FIB implantation"Physica E. 7. 435-439 (2000)

[Publications] Ph.Lelong: "Enhancement of the Coulomb correlations in type-II quantum dots"Physica E. 7. 393-397 (2000)

[Publications] S.Tsujino: "Peak position of the intersubband absorption spectrum of quantum wells with controlled electron concentrations"Phys.Rev.B. 65. 1560 (2000)

[Publications] K.Hirakawa: "Far-infrared photoresponse of the magnetoresistance of the two-dimensional electron systems in the integer quantized Hall regime"Physical Review B. (印刷中).

[Publications] Ph.Lelong: "Fano profiles in bound-to-continuum intersubband transitions in negatively charged InAs quantum dots"Proceedings of the 25th International Conference on the Physics of Semiconductors . (印刷中).

[Publications] Y.Shimada: "THz Emission due to Miniband Transport in GaAs/AlGaAs Superlattices""Japanese Journal of Applied Physics. (印刷中).

[Publications] K.Hiakawa: "Infrared optical conductivity of Inl-xMnxAs"Physica E. (印刷中).

[Publications] S.Katsumoto: "Magnetism and metal-insulator transition in III-V based diluted magnetic semiconductors"Journal of Materials Science and Engineering B. (印刷中).

[Publications] S.-W.Lee: "Modulation-doped quantum dot infrared photodetectors using self-assembled InAs quantum dots"Physica E. 7. 499-502 (2000)

[Publications] S.-W.Lee: "Mid-Infrared Photodetector Using Self-Assembled InAs Quantum Dots Embedded In Modulation Doped GaAs Quantum Wells"MRS Symposia Proceedings, Infrared Applications of Semiconductors II. Vol.607. 147-152 (2000)

[Publications] Y.Kawano: "Suppression of electron-hole-pair recombination in edge states in quantum Hall regimes"Physica E. (印刷中).

[Publications] H.M.Bu: "Random telegraph signals and low-frequency noise in n-metal-oxide-semiconductor field-effect transistors with ultranarrow channels"Applied Physics Letters. Vol.76,No.22. 3259-3261 (2000)

[Publications] 平本俊郎: "電子1個で動くトランジスタ"電気学会誌. Vol.120,No.8/9. 518-521 (2000)

[Publications] X.L.Yuan: "Effects of interface traps in silicon-quantum-dots-based memory structures"Physica E. Vol.8,No.2. 189-193 (2000)

[Publications] H.Majima: "Experimental Evidence for Quantum Mechanical Narrow Channel Effect in Ultra-Narrow MOSFETs"IEEE Electron Devices Letters. Vol.21,No.8. 396-398 (2000)

[Publications] Toshiro Hiramoto: "To fill the gap between Si-ULSI and nanodevices"International Journal of High Speed Electronics and Systems (I JHSES). Vol.10,No.1. 197-203 (2000)

[Publications] Y.Shi: "Dynamics of Tunneling into Charge-Tunable Si Quantum Dots"Superlattices and Microstructures. Vol.28,No.5/6. 387-392 (2000)

[Publications] M.Saitoh: "Large Electron Addition Energy above 250 meV in the Silicon Quantum Dot in a Single Electron Transistor(印刷中)"Japanese Journal of Applied Physics. Vol.40,No.3B. (2001)

[Publications] H.N.Wang: "Device Parameters for Electron Number Control in MOSFET Memories Based on Silicon Nanocrystal Floating Dots(印刷中)"Japanese Journal of Applied Physics. Vol.40,No.3B. (2001)

[Publications] K.Asano: "Two-Component Cyclotron Resonance in Bilayer Quantum Hall Systems"Physica E. 6. 636-639 (2000)

[Publications] S.Uryu: "Aharonov-Bohm Oscillation of Localization in Antidot Lattices"Physica E. 6. 503-506 (2000)

[Publications] T.Nakanishi: "Conductance Quantization in the Presence of Huge and Short-Range Potential in Carbon Nanotubes"Physica E. 6. 872-875 (2000)

[Publications] H.Suzuura: "Huge Magneto-Resistance by Phonon Scattering in Carbon Nanotubes"Physica E. 6. 864-867 (2000)

[Publications] K.Asano: "Electron-Electron Interaction Effects in Integer Quantum Hall Photoluminescence"Physica E. 7. 604-607 (2000)

[Publications] S.Uryu: "Magnetic-Field Dependence of Localization in Antidot Lattices"Prog.Theor.Phys.Suppl.. 138. 521-522 (2000)

[Publications] T.Ando: "Theory of Transport in Carbon Nanotubes"Semicond.Sci. & Technol.. 15. R13-R27 (2000)

[Publications] T.Ando: "Chaotic Transport in Antidot Lattices"J.Electronic Materials. 29. 557-564 (2000)

[Publications] M.Igami: "Effects of Lattice Vacancy in Carbon Nanotubes-Conductance Quantization-"Mol.Cryst.Liq.Crys. 340. 719-724 (2000)

[Publications] H.Matsumura: "Topological Effects on Conductance of Nanotubes"Mol.Cryst.Liq.Crys. 340. 725-730 (2000)

[Publications] H.Suzuura: "Chirality-Dependent Resistivity in Carbon Nanotubes"Mol.Cryst.Liq.Crys. 340. 731-736 (2000)

[Publications] M.Igami: "Effect of Lattice Vacancy in Conductance of Carbon Nanotubes"Physica B. 284-288. 1746-1747 (2000)

[Publications] T.Ando: "Spin-Orbit Interaction in Carbon Nanotubes"J.Phys.Soc.Jpn.. 69. 1757-1763 (2000)

[Publications] T.Nakanishi: "Contact between Carbon Nanotube and Metallic Electrode"J.Phys.Soc.Jpn.. 69. 2175-2181 (2000)

[Publications] T.Yasuhira: "Giant Faraday Rotation Spectra of Zn_<1-x>Mn_xSe Observed in High Magnetic Fields up to 150T"Physical Review B. 61. 4685-4688 (2000)

[Publications] H.Arimoto: "Anomalous Hysteretic Phenomena in Cyclotron Resonance Spectra of GaAs/AlGaAs Quantum Well under Tilted Magnetic Fields of Short Puse up to 150T"Physica E. 6. 191-194 (2000)

[Publications] R.K.Hayden: "The transition to Chaos in a Wide Quantum Well"Physica E. 7. 735-739 (2000)

[Publications] Y.H.Matsuda: "Cyclotron Resonance in Cd_<1-x>Mn_xTe : I at Very High Magnetic Fields"Journal of Crystal Growth. 214/215. 400-404 (2000)

[Publications] T.Devreese: "High Magnetic Field Cyclotron Resonance in CdS: Explanation of the Non-Monotonic Temperature Dependence of the Cyclotron Mass"Journal of Crystal Grow. 214/215. 465-468 (2000)

[Publications] V.F.Aguekian: "Photoluminescence of Free and Localized Excitons from CdTe/CdMnTe Quantum Well Structure in the Presence of a Strong External Magnetic Field"Journal of Luminescence. 87/89. 506-508 (2000)

[Publications] T.Goto: "Exciton Absorption Spectra of MoS_2Crystals in High Magnetic Fields up to 150T"Journal of Phvsics: Condensed Matter. 12. 6719-6723 (2000)

[Publications] M.Matsumoto: "Study of the adsorption structure of NO on Pt(111) by STM and HREELS"Surf.Sci.. 454-456. 101-105 (2000)

[Publications] K.Fukutani: "Electronic Structure of a Pt-Ge Surface Alloy"Surf.Sci.. 464. 48-56 (2000)

[Publications] S.Kishimoto: "Observation of nuclear excitation by electron transition in 197Au with synchrotron X rays and an avalanche photodiode"Phys.Rev.Lett.. 85. 1831-1834 (2000)

[Publications] M.Wilde: "Depth-resolved analysis of subsurface hydrogen absorbed by Pd(100)"Surf.Sci.. (in press).

[Publications] T.Itoyama: "Adsorption and photoexcitation of NO on Ag/Pt(111)"Surf.Sci.. (in press).

[Publications] R.Muhida: "Molecular orientation dependence of o-p H2 conversion on a 3d impurity sitting on a metal oxide surface"Surf.Sci.. (in press).

[Publications] Y.Miwa: "The Effect of Fe Doping on LaMnO_3"Transactions of the Materials Research Society of Japan. 25. 1057-1060 (2000)

[Publications] K.Oda: "Electromagnetic Properties of Lanthanum Manganese Oxides Doped with Iron"Hyperfine Interactions. (in press).

[Publications] N.Miura: "New Megagauss Laboratory of ISSP at Kashiwa"Physica B. (刊行予定). (2001)

[Publications] K.Jarasiunas: "Characterization of proton-irradiated InGaAs/GaAs multiple quantum well structures by nonresonant trantsient four-wave mixing technique"Japanese Journal of Applied Physics. Vol.39No.10. 5781-5787 (2000)

[Publications] S.Iwamoto: "Photorefractive multiple quantum wells at 1064nm"Optics Letters. Vol.26No.1. 22-24 (2000)

[Publications] 志村努: "半導体多重量子井戸構造を用いたフォトリフラクティブ光デバイス"光学. Vol.29No.8. 496-497 (2000)

[Publications] T.Takahashi: "Kelvin Probe Force Microscopy on InAs thin Film on (110) GaAs Substrates"Jpn.J.Appl.Phys.. 39. 3721-3723 (2000)

[Publications] H.Yamamoto: "Local Capacitance Measurements on InAs dot-covered GaAs Surfaces by Scanning Capacitance Microscopy"Appl.Phys.Lett. 77. 1994-1996 (2000)

[Publications] S.Ono: "Kelvin Probe Force Microscopy on InAs Thin Films Grown on GaAs Giant Step Structures formed on (110) GaAs Vicinal Substrates"Appl.Phys.Lett. 78. 1086-1088 (2000)

[Publications] N.Nakaoka: "Partitioned Real-Space Density Functional Calculations of Bielectrode Systems under Bias Voltage and Electric Field"Phys.Rev.Lett. (投稿中).

[Publications] 遠藤潤二: "電子干渉計測によるナノ構造と電界分布の可視化の試み"電気学会E部門誌. Vol.120No.6. 285-291 (2000)

榊裕之東京大学, 生産技術研究所, 教授 (90013226)