極薄膜ＩｎＧａＡｓ－ＯＩ ＭＯＳＦＥＴの高性能化及びその物性に関する研究

2013 Fiscal Year Annual Research Report

• Project/Area Number: 12J07612
• Research Institution: The University of Tokyo
• Principal Investigator: 金 相賢 東京大学, 大学院工学系研究科, 特別研究員(DC2)
• Keywords: InGaAs-OI / FinFET / Ni-InGaAs

Research Abstract

本研究では極薄膜III-V-OI (-on insulator)チャネルを有するMOSFETにおいて高いオン電流とよい短チャネル特性の実現を目的とし、Ni-InGaAsメタルsource/drain (S/D)を有するInGaAs-OI MOSFETにおいてメタルS/Dの寄生抵抗の成分を分析し、それぞれの抵抗成分を低減し、高いオン電流を実現している。また、短チャネル効果の抑制のため、Fin構造を導入し、Fin幅がどのように短チャネル効果に影響するかを調べた。さらに、このような要素技術を使ってチャネル長15nmを持つMOSFETの作製に成功した。
以下本年度の実施計画項目別に記述する。
・メタルS/Dの寄生抵抗の支配要因解析及びその低減方法
これまでメタルS/D技術を使って作製してきたMOSFETの寄生抵抗を低減するためにその支配要因の解析を行った。チャネルとメタル間の界面抵抗、メタルのシート抵抗、メタルと測定用パッドとのコンタクト抵抗をテストパターンを用いて電気的に分析した結果、メタルと測定用パッドとのコンタクト抵抗が一番大きくてその原因はNi-InGaAs上のNi酸化膜の存在であることをXPS分析にて明らかにした。さらに表面にH2プラズマ処理をすることで酸化膜の除去が可能であること、それを使って寄生抵抗を低減できることを実験的に明らかにし、最終的には2.4mA/μmの高いオン電流を実現した。
・Fin構造やNanowire構造MOSFETの試作及び評価
InGaAs-OI上でチャネル構造をFin構造にすることで短チャネル効果を効果的に抑制でき、Fin幅40nm, チャネル長15nmのMOSFETで世界トップレベルのオン電流を持つデバイス作製に成功した。また、Fin幅による電気特性の依存性を調べ、Fin幅を短くすることでTri-gateに近い構造にすることで短チャネル効果を効果的に抑制できることを明らかにした。さらに、InGaAs-OI構造を有することでバックバイアスにより、デバイスの作製後に閾値が変調できることを示した。

Strategy for Future Research Activity

(抄録なし)

Research Products

• [Journal Article] Tunnel Field-Effect Transistors with Germanium/Strained-Silicon Hetero-junctions for Low Power Applications (2014)
  • Author(s): M. -S. Kim, Y. -H Kim, M. Yokoyama, R. Nakane, S. -H. Kim, M. Takenaka and S. Takagi
  • Journal Title: Thin Solid Films Volume: 557 Pages: 298-301
  • DOI: 10.1016/j.tsf.2013.10.067
  • Peer Reviewed
• [Journal Article] Study on electrical properties of metal/GaSb junctions using metal-GaSb alloys (2014)
  • Author(s): K. Nishi, M. Yokoyama, S. -H. Kim, H. Yokoyama, M. Takenaka, and S. Takagi
  • Journal Title: Journal of Applied Physics Volume: 115 Pages: 034515
  • DOI: 10.1063/1.4862486
  • Peer Reviewed
• [Journal Article] Self-aligned Ni-GaSb source/drain junctions for GaSb p-channel metal-oxide-semiconductor field-effect transistors (2014)
  • Author(s): M. Yokoyama, K. Nishi, S. -H. Kim, H. Yokoyama, M. Takenaka and S. Takagi
  • Journal Title: Applied Physics Letters Volume: 104 Pages: 093509
  • DOI: 10.1063/1.4867262
  • Peer Reviewed
• [Journal Article] Physical understanding of electron mobility in asymmetrically strained InGaAs-on-insulator metal-oxide-semiconductor field-effect transistors fabricated by lateral strain relaxation (2014)
  • Author(s): S. H. Kim, M. Yokoyama, N. Taoka, R. Nakane, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Takenaka and S. Takagi
  • Journal Title: Applied Physics Letters Volume: 104 Pages: 113509
  • DOI: 10.1063/1.4869221
  • Peer Reviewed
• [Journal Article] High Performance Tri-Gate Extremely Thin-Body InAs-On-Insulator MOSFETs With High Short Channel Effect Immunity and V_<in> tunability (2014)
  • Author(s): S. -H. Kim, M. Yokoyama, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka and S. Takagi
  • Journal Title: IEEE Transactions on electron device Volume: 61 Pages: 1354-1360
  • DOI: 10.1109/TED.2014.2312546
  • Peer Reviewed
• [Journal Article] High Mobility CMOS Technologies using III-V/Ge Channels on Si platform (2013)
  • Author(s): S. Takagi, S. -H. Kim, M. Yokoyama, R. Zhang, N. Taoka, Y. Urabe, T. Yasuda, H. Yamada, O. Ichikawa, N. Fukuhara, M. Hata and M. Takenaka
  • Journal Title: Solid Stale Electronics Volume: 88 Pages: 2-8
  • DOI: 10.1016/j.sse.2013.04.020
  • Peer Reviewed
• [Journal Article] Impact of metal gate electrodes on electrical properties of InGaAs MOS gate stacks (2013)
  • Author(s): C. -Y. Chang, M. Yokoyama, S. -H. Kim, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, and S. Takagi
  • Journal Title: Microelectronic Engineering Volume: 109 Pages: 28-30
  • DOI: 10.1016/j.mee.2013.03.086
  • Peer Reviewed
• [Journal Article] Experimental Study on Electron Mobility in In_xGa_<1_x>As-on-insulator Metal-Oxide-Semiconductor Field-Effect Transistors with In content modulation and MOS interface buffer engineering (2013)
  • Author(s): S. -H. Kim, M. Yokoyama, N. Taoka, R. Iida, S. -H. Lee, R. Nakane, Y. Urabe, N. Miyata, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Takenaka and S. Takagi
  • Journal Title: IEEE Transactions on Nanotechnology Volume: 12 Pages: 621-628
  • DOI: 10.1109/TNANO.2013.2265435
  • Peer Reviewed
• [Journal Article] Sub-60 nm Extremely-thin Body In_xGa_<1-x>As-On-Insulator MOSFETs on Si with Ni-InGaAs Metal S/D and MOS Interface Buffer Engineering and its scalability (2013)
  • Author(s): S. -H. Kim, M. Yokoyama, N. Taoka, R. Nakane, T. Yasuda, O. Ichikawa, N. Fukuhara, M. Hata, M. Takenaka and S. Takagi
  • Journal Title: IEEE Transactions on electron device Volume: 60 Pages: 2512-2517
  • DOI: 10.1109/TED.2013.2270558
  • Peer Reviewed
• [Journal Article] Formation of III-V-On-Insulator Structures on Si by Direct Wafer Bonding (2013)
  • Author(s): M. Yokoyama, R. Iida, Y. Ikku, S. -H. Lee, S. -H. Kim, N. Taoka, Y. Urabe, T. Yasuda, H. Takagi, H. Yamada, N. Fukuhara, M. Hata, M. Sugiyama, Y. Nakano, M. Takenaka and S. Takagi
  • Journal Title: Semiconductor Science and Technology Volume: 28 Pages: 094009
  • DOI: 10.1088/0268-1242/28/9/094009
  • Peer Reviewed
• [Journal Article] High Performance InAs-On-Insulator nMOSFETs With Ni-InGaAs S/D Realized by Contact Resistance Reduction Technology (2013)
  • Author(s): S. -H. Kim, M. Yokoyama, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka and S. Takagi
  • Journal Title: IEEE Transactions on electron device Volume: 60 Pages: 3342-3350
  • DOI: 10.1109/TED.2013.2279363
  • Peer Reviewed
• [Journal Article] Impact of Fermi level pinning inside conduction band on electron mobility in InGaAs metal-oxide-semiconductor field-effect transistors (2013)
  • Author(s): N. Taoka, M. Yokoyama, S. -H. Kim, R. Suzuki, S. Lee, R. Iida, T. Hoshii, W. Jevasuwan, T. Maeda, T. Yasuda, O. Ichikawa, N. Fukuhara, M. Hata, M. Takenaka, and S. Takagi
  • Journal Title: Applied Physics Letters Volume: 103 Pages: 143509
  • DOI: 10.1063/1.4824474
  • Peer Reviewed
• [Journal Article] Biaxially strained Extremely-thin Body I_<n0.53>G_<a0.47>As-On-Insulator MOSFETs on Si substrates and Physical Understanding on their electron mobility (2013)
  • Author(s): S. -H. Kim, M. Yokoyama, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka and S. Takagi
  • Journal Title: Journal of Applied Physics Volume: 114 Pages: 164512
  • DOI: 10.1063/1.4828481
  • Peer Reviewed
• [Journal Article] Impact of Fermi level pinning due to interface traps inside conduction band on the inversion-layer mobility in InxG_a_<1-x> As metal-oxide-semiconductor field effect transistors (2013)
  • Author(s): N. Taoka, M. Yokoyama, S. -H. Kim, R. Suzuki, S. Lee, R. Iida, T. Hoshii, W. Jevasuwan, T. Maeda, T. Yasuda, O. Ichikawa, N. Fukuhara, M. Hata, M. Takenaka, and S. Takagi
  • Journal Title: IEEE Transactions on device and materials reliability Volume: 13 Pages: 456-462
  • DOI: 10.1109/TDMR.2013.2289330
  • Peer Reviewed
• [Presentation] High Performance Sub-20-nm-Channel-Length Extremely-Thin Body InAs-on-InsulatorTri-Gate MOSFETs with High Short Channel Effect Immunity (2014)
  • Author(s): S. H. Kim, M. Yokoyama, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, S. Takagi
  • Organizer: SDMシリコンテクノロジー分科会共催IEDM特集研究会
  • Place of Presentation: 機械振興会館、東京都
  • Year and Date: 2014-01-29
  • Invited
• [Presentation] High performance sub-20-nm-channel-length extremely-thin body InAs-on-insulator Tri-gate MOSFETs with high short channel effect immunity and V_<th> tunability (2013)
  • Author(s): S. H. Kim, M. Yokoyama, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka and S. Takagi
  • Organizer: International Electron Devices Meeting
  • Place of Presentation: Washington, DC, USA
  • Year and Date: 2013-12-10
• [Presentation] Physical understanding of electron mobility in uniaxially strained InGaAs-OI MOSFETs (2013)
  • Author(s): S. -H. Kim, M. Yokoyama, Y. Ikku, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, and S. Takagi
  • Organizer: European Solid-State Device Research Conference
  • Place of Presentation: Bucharest, Romania
  • Year and Date: 2013-09-18
• [Presentation] Strained Extremely-thin Body In_<0.53>Ga_<0.47>As-On-Insulator MOSFETs on Si substrates (2013)
  • Author(s): S. H. Kim, M. Yokoyama, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka and S. Takagi
  • Organizer: Symposium on VLSI Technology
  • Place of Presentation: Rihga Royal Hotel Kyoto,, Kyoto, Japan
  • Year and Date: 2013-06-11
• [Presentation] High Performance Extremely-thin Body InAs-On-Insulator MOSFETs on Si with Ni-InGaAs Metal S/D by Contact Resistance Reduction Technology (2013)
  • Author(s): S. H. Kim, M. Yokoyama, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka and S. Takagi
  • Organizer: Symposium on VLSI Technology
  • Place of Presentation: Rihga Royal Hotel Kyoto,, Kyoto, Japan
  • Year and Date: 2013-06-11
• [Presentation] Analysis on channel thickness fluctuation scattering in InGaAs-OI MOSFETs (2013)
  • Author(s): S. H. Kim, M. Yokoyama, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka and S. Takagi
  • Organizer: IPRM
  • Place of Presentation: Kobe Convention Center, Kobe, Japan
  • Year and Date: 2013-05-22