2003 Fiscal Year Annual Research Report

超広波長帯・超高速多重量子井戸光変調デバイス

Research Project

Project/Area Number	13026209
Research Institution	Yokohama National University
Principal Investigator	荒川太郎横浜国立大学, 大学院・工学研究院, 助教授 (40293170)
Co-Investigator(Kenkyū-buntansha)	盧柱亨横浜国立大学, 大学院・工学研究院, 助手 (50313474) 羽路伸夫横浜国立大学, 大学院・工学研究院, 教授 (30180920) 多田邦雄金沢工業大学, 大学院・工学研究科, 教授 (00010710)
Keywords	光制御デバイス / 光変調器 / 光スイッチ / ポテンシャル制御量子井戸 / 5層非対称結合量子井戸 / 分子線エピタキシー法 / ECRドライエッチング
Research Abstract	本研究では,ポテンシャル制御量子井戸の一つである5層非対称結合量子井戸(FACQW)の作製およびFACQWを用いた超広波長帯・超高速光変調デバイスの実現を目指している. 3年間の本格研究活動の最終年度にあたる本年度は,以下の成果を得た. 1.GaAs/AlGaAs-FACQW位相変調器構造の作製と電界誘起屈折率変化特性の評価 GaAs/AlGaAs-FACQWを光導波路に用いた位相変調器構造を作製し,ファブリー・ペロー共振法により屈折率変化を測定した.その結果,電界誘起屈折率変化率\|Δn/ΔF\|が1.2×10^<-4>cm/kVという巨大な屈折率変化が初めて観測された. 2.GaAs/AlGaAs-FACQW Mach-Zehnder型光変調器の作製プロセスの確立と評価 GaAs/AlGaAs-FACQWを光導波路に用いたMach-Zehnder型光変調器の作製プロセス条件出しを行ない,素子の試作に成功した.また,試作した素子の光導波実験を行ない,光変調を確認した. 3.長波長用FACQWの作製および特性評価光通信用長波長帯FACQWの作製を目指し,InP基板上にInGaAs/InAlAs FACQW構造を作製し,光学的評価を行った.フォトルミネセンスによる評価では設計通りの発光が見られたが,明確な光吸収電流ピークの観察には至らなかった.その原因を検討中である. 4.STMを用いたFACQW試料の断面観察多重FACQW試料を超高真空中チャンバー内で劈開し,走査型トンネル顕微鏡(STM)を用いて断面観察を行ない,FACQW構造に対応したストライプ像を得ることに成功した.今後,さらに解像度を上げていく必要がある. 5.光制御デバイス作製用エッチングプロセスの研究光制御デバイスの作製のため,メタン・水素/酸素交互供給によるGaNのECR-RIEエッチングについて研究し,良好な表面平滑性と端面垂直性を得るためのプロセス条件を確立した.

Research Products

(14 results)

All Other

All Publications (14 results)

[Publications] N.Haneji, G.Segami, T.Ide, T.Suzuki, T.Arakawa, K.Tada et al.: "Electron cyclotron Resonance-Reactive Ion Etching of III-V Semiconductors by Cyclic Injection of CH_4/H_2/Ar and O_2 with Constant Ar Flow"Jpn.J.Appl.Phys.. 42・6B. 3958-3961 (2003)
[Publications] T.Arakawa, K.Tada, R.Iino, T.Suzuki, J.-H.Noh, N.Haneji, et al.: "Electrorefractive properties of modified five-layer asymmetric coupled quantum well (FACQW)"Microelectronics J.. 34. 387-390 (2003)
[Publications] J.-H.Noh, S.Hasegawa, T.Suzuki, T.Arakawa, K.Tada et al.: "Migration Enhanced Epitaxy (MEE) Growth of Five-Layer Asymmetric Coupled Quantum Well (FACQW) and Its Cross-sectional STM Observation"Physica E. (To Appear). (2004)
[Publications] Kunio Tada, Taro Arakawa, Joo-Hyong Noh, Tatsuya Suzuki: "Five-Layer Asymmetric Coupled Quantum Well -- A Promising Nanostructure with Tailored Potential (Plenary)"Abstracts of the first international Symposium on Future Issues in Nano-optoelectronics (Kang's Fin '03). 1-4 (2003)
[Publications] Kunio TADA, Taro ARAKAWA: "High-Performance Optical Modulators Based on Potential-Tailored Quantum Wells (Invited)"Acta Optica Sinica, Suppliment. 23. 335-336 (2003)
[Publications] T.ARAKAWA, R.IINO, T.ISHIE, T.KAWABATA, K.TADA: "InGaAs/InAlAs Five Layer Asymmetric Coupled Quantum Well (FACQW) for Ultra-Wideband Ultrafast Optical Modulators"Acta Optica Sinica, Suppliment. 23. 343-345 (2003)
[Publications] J.-H.Noh, S.Hasegawa, T.Suzuki, T.Arakawa, K.Tada et al.: "Migration Enhanced Epitaxy (MEE) Growth of Five-Layer Asymmetric Coupled Quantum Well (FACQW) and its Cross-sectional STM Observation"Abstracts of Fifth Internernational Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces (ESPS-NIS). 60 (2003)
[Publications] Kuno Tada: "High Speed Semiconductor Optical Modulators/Switches(Plenary)"Technical Digest of the 9th Microoptics Conference (MOC'03). 4-7 (2003)
[Publications] J.-H.Noh, S.Hasegawa, T.Suzuki, T.Arakawa, K.Tada, H.Asahi: "Migration Enhanced Epitaxy (MEE) growth of Five-Layer Asymmetric Coupled Quantum Well (FACQW) and its Cross-sectional STM Observation"Abstracts of fifth International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces (ESPS-NIS). 60 (2003)
[Publications] N.Haneji, T.Ide, Y.Awa, T.Arakawa, M.Sugiyama, Y.Shimogaki, K.Tada et al.: "Electron Cyclotron Resonance-Reactive Ion Etching of InGaAs/InAlAs/InP Multilayer Structure and GaN by Cyclic Injection of Ch_4/H_2/Ar and O_2 with Constant Ar Flow"Digest of Papers, 2003 International Microprocesses and Nanotechnology Conference(MNS 2003). 34. 330-331 (2003)
[Publications] J.-H.Noh, S.Hasegawa, T.Suzuki, T.Arakawa, K.Tada, H.Asahi: "Cross-Sectional STM Study of Five-Layer Asymmetric Coupled Quantum Well (FACQW) Grown by Migration Enhanced Epitaxy(MEE)"Abstracts of The 11th International Colloquium on Scanning Probe Microscopy (ICSPM11). 76 (2003)
[Publications] T.Arakawa, K.Tada, J.-H.Noh, T.Suzuki, N.Haneji: "Five-Layer Asymmetric Coupled Quantum Well(FACQW) and Its Application to High-Performance Optical Modulators(Invited)"Proceedings of the International Conference on Optoelectronics Technology (ICOT-2004). 151-156 (2004)
[Publications] N.Niiya, T.Arakawa, K.Tada, F.Tadano, T.Suzuki, J.H.Noh, N.Haneji: "Electroabsorptive Characterization of GaAs/AlGaAs Modified Five-layer Asymmetric Coupled Quantum Well(M-FACQW)"Technical Digest of 7th International Conference on Contenporary Photonics Technology (CPT2004). 73-74 (2004)
[Publications] K.Tada, T.Arakawa: "Recent Advances in Five-Layer Asymmetric Coupled Quantum Wells (FACQW) for High Performance Optical Modulators(Invited)"Abstracts of Japan-Germany-Spain Joint Workshop on Advanced Semiconductor Optoelectronic Devices and Materials. 21-23 (2004)

2003 Fiscal Year Annual Research Report

超広波長帯・超高速多重量子井戸光変調デバイス

Principal Investigator

荒川 太郎 横浜国立大学, 大学院・工学研究院, 助教授 (40293170)

Research Products

[Publications] N.Haneji, G.Segami, T.Ide, T.Suzuki, T.Arakawa, K.Tada et al.: "Electron cyclotron Resonance-Reactive Ion Etching of III-V Semiconductors by Cyclic Injection of CH_4/H_2/Ar and O_2 with Constant Ar Flow"Jpn.J.Appl.Phys.. 42・6B. 3958-3961 (2003)

[Publications] T.Arakawa, K.Tada, R.Iino, T.Suzuki, J.-H.Noh, N.Haneji, et al.: "Electrorefractive properties of modified five-layer asymmetric coupled quantum well (FACQW)"Microelectronics J.. 34. 387-390 (2003)

[Publications] J.-H.Noh, S.Hasegawa, T.Suzuki, T.Arakawa, K.Tada et al.: "Migration Enhanced Epitaxy (MEE) Growth of Five-Layer Asymmetric Coupled Quantum Well (FACQW) and Its Cross-sectional STM Observation"Physica E. (To Appear). (2004)

[Publications] Kunio Tada, Taro Arakawa, Joo-Hyong Noh, Tatsuya Suzuki: "Five-Layer Asymmetric Coupled Quantum Well -- A Promising Nanostructure with Tailored Potential (Plenary)"Abstracts of the first international Symposium on Future Issues in Nano-optoelectronics (Kang's Fin '03). 1-4 (2003)

[Publications] Kunio TADA, Taro ARAKAWA: "High-Performance Optical Modulators Based on Potential-Tailored Quantum Wells (Invited)"Acta Optica Sinica, Suppliment. 23. 335-336 (2003)

[Publications] T.ARAKAWA, R.IINO, T.ISHIE, T.KAWABATA, K.TADA: "InGaAs/InAlAs Five Layer Asymmetric Coupled Quantum Well (FACQW) for Ultra-Wideband Ultrafast Optical Modulators"Acta Optica Sinica, Suppliment. 23. 343-345 (2003)

[Publications] Kuno Tada: "High Speed Semiconductor Optical Modulators/Switches(Plenary)"Technical Digest of the 9th Microoptics Conference (MOC'03). 4-7 (2003)

[Publications] J.-H.Noh, S.Hasegawa, T.Suzuki, T.Arakawa, K.Tada, H.Asahi: "Cross-Sectional STM Study of Five-Layer Asymmetric Coupled Quantum Well (FACQW) Grown by Migration Enhanced Epitaxy(MEE)"Abstracts of The 11th International Colloquium on Scanning Probe Microscopy (ICSPM11). 76 (2003)

[Publications] T.Arakawa, K.Tada, J.-H.Noh, T.Suzuki, N.Haneji: "Five-Layer Asymmetric Coupled Quantum Well(FACQW) and Its Application to High-Performance Optical Modulators(Invited)"Proceedings of the International Conference on Optoelectronics Technology (ICOT-2004). 151-156 (2004)

[Publications] K.Tada, T.Arakawa: "Recent Advances in Five-Layer Asymmetric Coupled Quantum Wells (FACQW) for High Performance Optical Modulators(Invited)"Abstracts of Japan-Germany-Spain Joint Workshop on Advanced Semiconductor Optoelectronic Devices and Materials. 21-23 (2004)

荒川太郎横浜国立大学, 大学院・工学研究院, 助教授 (40293170)