2002 Fiscal Year Annual Research Report

ナノショットキーゲート制御量子ドットによるBDDアーキテクチャ単電子集積回路

Research Project

Project/Area Number	13305020
Research Institution	Hokkaido University
Principal Investigator	長谷川英機北海道大学, 大学院・工学研究科, 教授 (60001781)
Co-Investigator(Kenkyū-buntansha)	赤澤正道北海道大学, 量子エレクトロニクス研究センター, 助教授 (30212400) 橋詰保北海道大学, 量子エレクトロニクス研究センター, 助教授 (80149898) 雨宮好仁北海道大学, 大学院・工学研究科, 教授 (80250489) 葛西誠也北海道大学, 大学院・工学研究科, 助教授 (30312383)
Keywords	単電子回路 / 二分決定グラフ(BDD) / ヘキサゴナルBDD量子回路 / 量子ドット / ショットキーゲート / 量子細線ネットワーク / 電力・遅延積 / 量子輸送
Research Abstract	本研究は、独自の2分決定グラフ(Binary Decision Diagram : BDD)論理アーキテクチャをもつ集積回路をナノショットキーゲートで量子ドットを形成制御する単電子BDD節点デバイスを用いて実現することを目的とする。平成14年度に得られた成果を以下に示す。 1.前年度に提案した新しい量子論理回路方式「ヘキサゴナルBDD量子回路」に基づき、加算器や比較器等の論理サブシステムを設計した。これら機能は全てヘキサゴナルレイアウトでナノ細線の交差無しに設計できることを示した。 2.GaAsエッチングナノ細線をショットキーラップゲート(WPG)で制御したBDD節点デバイスの電力遅延積の評価を行い、量子細線形素子で10^<-18>J、単電子形では10^<-22>Jと極めて小さく、本素子を集積した回路が超高速低消費電力動作可能であることを示した。 3.エッチングヘキサゴナルGaAsナノ細線ネットワークをWPGで制御する回路実装法で、集積密度4.5x10^7素子/cm^2対応高集積プロセスを確立した。また、本方法により40素子を集積化した4ビット加算器の試作に成功した。 4.MBE選択成長法により均一性制御性が高いIII-V族埋込みリッジ量子細線ヘキサゴナルネットワーク構造を実現した。高密度集積化を進めGaAs系では2.4x10^8、InP系では10^9素子/cm^2を実現する超高密度構造の形成に成功した。 5.超薄膜Si層によるGaAsナノ構造表面不活性化に取り組み、その構造最適化を進めた。Si層形成前のGaAs初期表面として(4x6)再構成面を用いることで優れた不活性化構造を実現できること、さらに(2x6)のような異種の再構成が混在しないナノレベルで均一な表面を形成することでより高い効果が得られることを示した。Si系絶縁膜を用いたMIS構造において極めて低い界面準位密度4x10^<10>cm^<-2>eV^<-1>を実現した。

Research Products

(38 results)

All Other

All Publications (38 results)

[Publications] Y.Nakano, N.Negoro, H.Hasegawa: "Strong Photoluminescence and Low Surface State Densities on Clean and Silicon Deposited(001)Surface of GaAs with(4x6)Reconstruction"Japanese Journal Applied Physics. 41(4B). 2542-2547 (2002)
[Publications] M.Endo, Z.Jin, S.Kasai, H.Hasegawa: "Reactive Ion Beam Etching of GaN and AlGaN/GaN for Nanostructure Fabrication Using Methane-Based Gas Mixtures"Japanese Journal Applied Physics. 41(4B). 2689-2693 (2002)
[Publications] C.Jiang, T.Muranaka, H.Hasegawa: "Structural and Optical Properties of 10 nm-class InGaAs Ridge Quantum Wire Arrays with Sub-Micron Pitches Grown by Selective MBE on Patterned InP Substrate"Japanese Journal Applied Physics. 41(4B). 2683-2688 (2002)
[Publications] M.Yumoto, S.Kasai, H.Hasegawa: "Novel Quantum Wire Branch-Switches for Binary Decision Diagram Logic Architecture Utilizing Schottky Wrap-Gate Control of GaAs/AlGaAs Nanowires"Japanese Journal Applied Physics. 41(4B). 2671-2674 (2002)
[Publications] S.Kasai, H.Hasegawa: "III-V quantum devices and circuits based on nanoscale Schottky gate control of hexagonal quantum wire networks"Applied Surface Science. 190(1-4). 176-183 (2002)
[Publications] A.Ito, T.Muranaka, C.Jiang, H.Hasegawa: "Formation of high-density hexagonal networks of InGaAs ridge quantum wires by atomic hydrogen-assisted selective molecular beam epitaxy"Applied Surface Science. 190(1-4). 231-235 (2002)
[Publications] M.Yumoto, S.Kasai, H.Hasegawa: "Gate control characteristics in GaAs nanometer-scale Schottky wrap gate structures, Applied Surface Science"Applied Surface Science. 190(1-4). 242-246 (2002)
[Publications] N.Negoro, S.Kasai, H.Hasegawa: "Scanned-probe topological and spectroscopic study of surface states on clean and Si-deposited GaAs (001)-c(4×4)surfaces"Applied Surface Science. 190(1-4). 269-274 (2002)
[Publications] Z.Fu, S.Kasai, H.Hasegawa: "Gated photoluminescence study of oxide-free InP MIS structure having an ultrathin silicon interface control layer"Applied Surface Science. 190(1-4). 298-301 (2002)
[Publications] S.Oyama, T.Hashizume, H.Hasegawa: "Mechanism of current leakage through metal/n-GaN interfaces"Applied Surface Science. 190(1-4). 322-325 (2002)
[Publications] S.Anantathanasarn, H.Hasegawa: "Photoluminescence and capacitance-voltage characterization of GaAs surface passivated by an ultrathin GaN interface control layer"Applied Surface Science. 190(1-4). 343-347 (2002)
[Publications] Z.Jin, T.Hashizume, H.Hasegawa: "Effects of nitrogen addition on methane-based ECR plasma etching of gallium nitride"Applied Surface Science. 190(1-4). 361-365 (2002)
[Publications] F.Ishikawa, H.Hasegawa: "Depth-resolved cathodoluminescence characterization of buried InGaP/GaAs heterointerfaces"Applied Surface Science. 190(1-4). 508-512 (2002)
[Publications] M.Miczek, B.Adamowicz, H.Hasegawa: "Determination of InP surface state density distribution from excitation-power-dependent photoluminescence spectra using genetic algorithm-based fitting procedure"Surface Science. 507. 240-244 (2002)
[Publications] S.Kasai, H.Hasegawa: "A Single Electron Binary-Decision-Diagram Quantum Logic Circuit Based on Schottky Wrap Gate Control of a GaAs Nanowire Hexagon"IEEE Electron Device Letters. 23(8). 446-448 (2002)
[Publications] H.Hasegawa, S.Oyama: "Mechanism of anomalous current transport in n-type GaN Schottky contacts"Journal of Vacuum Science & Technology. B20. 1647-1655 (2002)
[Publications] Miki Yumoto, Seiya Kasai, Hideki Hasegawa: "Graph-based quantum logic circuits and their realization by novel GaAs multiple quantum wire branch switches utilizing Schottky wrap gates"Microelectronic Engineering. 63(1-3). 287-291 (2002)
[Publications] Chao Jiang, Tsutomu Muranaka, Hideki Hasegawa: "Molecular beam epitaxy growth mechanism and wire width control for formation of dense networks of narrow InGaAs quantum wires, Microelectronic Engineering"Microelectronic Engineering. 63(1-3). 293-299 (2002)
[Publications] B.Adamowicz, M.Miczek, S.Arabasz, H.Hasegawa: "Rigorous analysis of photoluminescence efficiency for characterization of electronic properties of InP(001)surfaces"Vacuum. 67(1). 3-10 (2002)
[Publications] S.Ootomo, T.Hashizume, H.Hasegawa: "A Novel Thin Al2O3 Gate Dielectric by ECR-Plasuma Oxidation of Al for AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors"Phys. Stat. Sol.(c). 0(1). 90-94 (2002)
[Publications] M.Konishi, S.Anantathanasarn, T.Hashizume, H.Hasegawa: "In-situ XPS and photoluminescence characterization of GaN surfaces grown by MBE on MOVPE GaN templates"Inst. Phys. Conf. Ser.. 170. 837-842 (2002)
[Publications] F.Ishikawa, H.Hasegawa: "Self-consistent computer analysis of cathodoluminescence in-depth spectra for compound semiconductor heterostructures"Inst. Phys. Conf. Ser.. 170. 461-466 (2002)
[Publications] T.Sato, I.Tamai, C.Jian, H.Hasegawa: "Selective MBE Growth of GaAs/AlGaAs Nanowires on Patterned GaAs(001) Substrates and Its Application to Hexagonal Nanowire Network Formation"Inst. Phys. Conf. Ser.. 170. 325-330 (2002)
[Publications] H.Hasegawa: "Characterization and control of surfaces and interfaces for III-V nanoelectronics"PHYSICA STATUS SOLIDI A-APPLIED RESEARCH. 195. 9-17 (2003)
[Publications] M.Akazawa, H.Hasegawa: "UHV contactless capacitance-voltage characterization method applicable to semiconductor layers grown on insulating substrates"PHYSICA STATUS SOLIDI A-APPLIED RESEARCH. 195. 248-254 (2003)
[Publications] S.Kasai, M.Yumoto, H.Hasegawa: "Fabrication of GaAs-based integrated half and full adders by novel hexagonal BDD quantum circuit approach"Solid-State Electronics. 47(2). 199-204 (2003)
[Publications] A.Kameda, S.Kasai, T.Sato, H.Hasegawa: "Effects of surface states on control characteristics of nano-meter scale Schottky gates formed on GaAs"Solid-State Electronics. 47(2). 323-331 (2003)
[Publications] H.Hasegawa: "III-V Nanoelectronics and Related Surface/Interface Issues"Applied Surface Science. (in press). (2003)
[Publications] F.Ishikawa, H.Hasegawa: "Cathodoluminescence in-depth spectroscopy study of AlGaN/GaN heterostructures"Applied Surface Science. (in press). (2003)
[Publications] H.Hasegawa, T.Muranaka, S.Kasai, T.Hashizume: "Fabrication of AlGaN/GaN Quantum Nanostructures by Methane-Based Dry Etching and Characterization of Their Electrical Properties"Japanese Journal Applied Physics. (in press). (2003)
[Publications] T.Kakumu, F.Ishikawa, S.Kasai, T.Hashizume, H.Hasegawa: "Control of Order Parameter during Growth of In0.5Ga0.5P/GaAs Heterostructures by GSMBE Using Tertiarybutylphosphine(TBP)"Japanese Journal of Applied Physics. (in press). (2003)
[Publications] S.Kasai, W.Han M.Yumoto, H.Hasegawa: "Theraherz Response of Schottky Wrap Gate-Controlled Quantum Dots"Physica Status Solidi. (in press). (2003)
[Publications] H.Hasegawa, T.Inagaki, S.Ootomo, T.Hashizume: "Properties of Electronic States at Free Surfaces and Schottky Barrier Interfaces of AlGaN/GaN Heterostructure"Inst. Phys. Conf. Ser. (in press). (2003)
[Publications] T.Sato, I.Tamai, H.Hasegawa: "elective MBE Growth of GaAs Ridge Quantum Wire Arrays on Patterned(001)Substrates and Its Growth Mechanism"Inst. Phys. Conf. Ser. (in press). (2003)
[Publications] S.Anantathanasarn, H.Hasegawa: "Pinning-Free GaAs MIS Structures with Si Interface Control Layers Formed on (4x6) Reconstructed(001)Surface"Applied Surface Science. (in press). (2003)
[Publications] T.Inagaki, T.Hashizume, H.Hasegawa: "Effects of Surface Processing on 2DEG Current Transport at AlGaN/GaN Interface Studied by Gateless HFET Structure"Applied Surface Science. (in press). (2003)
[Publications] H.Hasegawa, T.Hashizume: "Prospects and Passivation of Electronic States at Free Surfaces and Schottky Interfaces of GaN and Related Alloys"Materials Research Society Symposium Proceedings Series. (in press). (2003)
[Publications] H.Hasegawa: "Formation of III-V Low Dimensional Structures and Their Applications to Intelligent Quantum Chips"Microelectronics Journal. (in press). (2003)

2002 Fiscal Year Annual Research Report

ナノショットキーゲート制御量子ドットによるBDDアーキテクチャ単電子集積回路

Principal Investigator

長谷川 英機 北海道大学, 大学院・工学研究科, 教授 (60001781)

Research Products

[Publications] Y.Nakano, N.Negoro, H.Hasegawa: "Strong Photoluminescence and Low Surface State Densities on Clean and Silicon Deposited(001)Surface of GaAs with(4x6)Reconstruction"Japanese Journal Applied Physics. 41(4B). 2542-2547 (2002)

[Publications] M.Endo, Z.Jin, S.Kasai, H.Hasegawa: "Reactive Ion Beam Etching of GaN and AlGaN/GaN for Nanostructure Fabrication Using Methane-Based Gas Mixtures"Japanese Journal Applied Physics. 41(4B). 2689-2693 (2002)

[Publications] C.Jiang, T.Muranaka, H.Hasegawa: "Structural and Optical Properties of 10 nm-class InGaAs Ridge Quantum Wire Arrays with Sub-Micron Pitches Grown by Selective MBE on Patterned InP Substrate"Japanese Journal Applied Physics. 41(4B). 2683-2688 (2002)

[Publications] M.Yumoto, S.Kasai, H.Hasegawa: "Novel Quantum Wire Branch-Switches for Binary Decision Diagram Logic Architecture Utilizing Schottky Wrap-Gate Control of GaAs/AlGaAs Nanowires"Japanese Journal Applied Physics. 41(4B). 2671-2674 (2002)

[Publications] S.Kasai, H.Hasegawa: "III-V quantum devices and circuits based on nanoscale Schottky gate control of hexagonal quantum wire networks"Applied Surface Science. 190(1-4). 176-183 (2002)

[Publications] A.Ito, T.Muranaka, C.Jiang, H.Hasegawa: "Formation of high-density hexagonal networks of InGaAs ridge quantum wires by atomic hydrogen-assisted selective molecular beam epitaxy"Applied Surface Science. 190(1-4). 231-235 (2002)

[Publications] M.Yumoto, S.Kasai, H.Hasegawa: "Gate control characteristics in GaAs nanometer-scale Schottky wrap gate structures, Applied Surface Science"Applied Surface Science. 190(1-4). 242-246 (2002)

[Publications] N.Negoro, S.Kasai, H.Hasegawa: "Scanned-probe topological and spectroscopic study of surface states on clean and Si-deposited GaAs (001)-c(4×4)surfaces"Applied Surface Science. 190(1-4). 269-274 (2002)

[Publications] Z.Fu, S.Kasai, H.Hasegawa: "Gated photoluminescence study of oxide-free InP MIS structure having an ultrathin silicon interface control layer"Applied Surface Science. 190(1-4). 298-301 (2002)

[Publications] S.Oyama, T.Hashizume, H.Hasegawa: "Mechanism of current leakage through metal/n-GaN interfaces"Applied Surface Science. 190(1-4). 322-325 (2002)

[Publications] S.Anantathanasarn, H.Hasegawa: "Photoluminescence and capacitance-voltage characterization of GaAs surface passivated by an ultrathin GaN interface control layer"Applied Surface Science. 190(1-4). 343-347 (2002)

[Publications] Z.Jin, T.Hashizume, H.Hasegawa: "Effects of nitrogen addition on methane-based ECR plasma etching of gallium nitride"Applied Surface Science. 190(1-4). 361-365 (2002)

[Publications] F.Ishikawa, H.Hasegawa: "Depth-resolved cathodoluminescence characterization of buried InGaP/GaAs heterointerfaces"Applied Surface Science. 190(1-4). 508-512 (2002)

[Publications] M.Miczek, B.Adamowicz, H.Hasegawa: "Determination of InP surface state density distribution from excitation-power-dependent photoluminescence spectra using genetic algorithm-based fitting procedure"Surface Science. 507. 240-244 (2002)

[Publications] S.Kasai, H.Hasegawa: "A Single Electron Binary-Decision-Diagram Quantum Logic Circuit Based on Schottky Wrap Gate Control of a GaAs Nanowire Hexagon"IEEE Electron Device Letters. 23(8). 446-448 (2002)

[Publications] H.Hasegawa, S.Oyama: "Mechanism of anomalous current transport in n-type GaN Schottky contacts"Journal of Vacuum Science & Technology. B20. 1647-1655 (2002)

[Publications] Miki Yumoto, Seiya Kasai, Hideki Hasegawa: "Graph-based quantum logic circuits and their realization by novel GaAs multiple quantum wire branch switches utilizing Schottky wrap gates"Microelectronic Engineering. 63(1-3). 287-291 (2002)

[Publications] Chao Jiang, Tsutomu Muranaka, Hideki Hasegawa: "Molecular beam epitaxy growth mechanism and wire width control for formation of dense networks of narrow InGaAs quantum wires, Microelectronic Engineering"Microelectronic Engineering. 63(1-3). 293-299 (2002)

[Publications] B.Adamowicz, M.Miczek, S.Arabasz, H.Hasegawa: "Rigorous analysis of photoluminescence efficiency for characterization of electronic properties of InP(001)surfaces"Vacuum. 67(1). 3-10 (2002)

[Publications] S.Ootomo, T.Hashizume, H.Hasegawa: "A Novel Thin Al2O3 Gate Dielectric by ECR-Plasuma Oxidation of Al for AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors"Phys. Stat. Sol.(c). 0(1). 90-94 (2002)

[Publications] M.Konishi, S.Anantathanasarn, T.Hashizume, H.Hasegawa: "In-situ XPS and photoluminescence characterization of GaN surfaces grown by MBE on MOVPE GaN templates"Inst. Phys. Conf. Ser.. 170. 837-842 (2002)

[Publications] F.Ishikawa, H.Hasegawa: "Self-consistent computer analysis of cathodoluminescence in-depth spectra for compound semiconductor heterostructures"Inst. Phys. Conf. Ser.. 170. 461-466 (2002)

[Publications] T.Sato, I.Tamai, C.Jian, H.Hasegawa: "Selective MBE Growth of GaAs/AlGaAs Nanowires on Patterned GaAs(001) Substrates and Its Application to Hexagonal Nanowire Network Formation"Inst. Phys. Conf. Ser.. 170. 325-330 (2002)

[Publications] H.Hasegawa: "Characterization and control of surfaces and interfaces for III-V nanoelectronics"PHYSICA STATUS SOLIDI A-APPLIED RESEARCH. 195. 9-17 (2003)

[Publications] M.Akazawa, H.Hasegawa: "UHV contactless capacitance-voltage characterization method applicable to semiconductor layers grown on insulating substrates"PHYSICA STATUS SOLIDI A-APPLIED RESEARCH. 195. 248-254 (2003)

[Publications] S.Kasai, M.Yumoto, H.Hasegawa: "Fabrication of GaAs-based integrated half and full adders by novel hexagonal BDD quantum circuit approach"Solid-State Electronics. 47(2). 199-204 (2003)

[Publications] A.Kameda, S.Kasai, T.Sato, H.Hasegawa: "Effects of surface states on control characteristics of nano-meter scale Schottky gates formed on GaAs"Solid-State Electronics. 47(2). 323-331 (2003)

[Publications] H.Hasegawa: "III-V Nanoelectronics and Related Surface/Interface Issues"Applied Surface Science. (in press). (2003)

[Publications] F.Ishikawa, H.Hasegawa: "Cathodoluminescence in-depth spectroscopy study of AlGaN/GaN heterostructures"Applied Surface Science. (in press). (2003)

[Publications] H.Hasegawa, T.Muranaka, S.Kasai, T.Hashizume: "Fabrication of AlGaN/GaN Quantum Nanostructures by Methane-Based Dry Etching and Characterization of Their Electrical Properties"Japanese Journal Applied Physics. (in press). (2003)

[Publications] T.Kakumu, F.Ishikawa, S.Kasai, T.Hashizume, H.Hasegawa: "Control of Order Parameter during Growth of In0.5Ga0.5P/GaAs Heterostructures by GSMBE Using Tertiarybutylphosphine(TBP)"Japanese Journal of Applied Physics. (in press). (2003)

[Publications] S.Kasai, W.Han M.Yumoto, H.Hasegawa: "Theraherz Response of Schottky Wrap Gate-Controlled Quantum Dots"Physica Status Solidi. (in press). (2003)

[Publications] H.Hasegawa, T.Inagaki, S.Ootomo, T.Hashizume: "Properties of Electronic States at Free Surfaces and Schottky Barrier Interfaces of AlGaN/GaN Heterostructure"Inst. Phys. Conf. Ser. (in press). (2003)

[Publications] T.Sato, I.Tamai, H.Hasegawa: "elective MBE Growth of GaAs Ridge Quantum Wire Arrays on Patterned(001)Substrates and Its Growth Mechanism"Inst. Phys. Conf. Ser. (in press). (2003)

[Publications] S.Anantathanasarn, H.Hasegawa: "Pinning-Free GaAs MIS Structures with Si Interface Control Layers Formed on (4x6) Reconstructed(001)Surface"Applied Surface Science. (in press). (2003)

[Publications] T.Inagaki, T.Hashizume, H.Hasegawa: "Effects of Surface Processing on 2DEG Current Transport at AlGaN/GaN Interface Studied by Gateless HFET Structure"Applied Surface Science. (in press). (2003)

[Publications] H.Hasegawa, T.Hashizume: "Prospects and Passivation of Electronic States at Free Surfaces and Schottky Interfaces of GaN and Related Alloys"Materials Research Society Symposium Proceedings Series. (in press). (2003)

[Publications] H.Hasegawa: "Formation of III-V Low Dimensional Structures and Their Applications to Intelligent Quantum Chips"Microelectronics Journal. (in press). (2003)

長谷川英機北海道大学, 大学院・工学研究科, 教授 (60001781)