2003 Fiscal Year Annual Research Report

ナノショットキーゲート制御量子ドットによるBDDアーキテクチャ単電子集積回路

Research Project

Project/Area Number	13305020
Research Institution	HOKKAIDO UNIVERSITY
Principal Investigator	長谷川英機北海道大学, 大学院・工学研究科, 教授 (60001781)
Co-Investigator(Kenkyū-buntansha)	赤澤正道北海道大学, 量子集積エレクトロニクス研究センター, 助教授 (30212400) 橋詰保北海道大学, 量子集積エレクトロニクス研究センター, 助教授 (80149898) 雨宮好仁北海道大学, 大学院・工学研究科, 教授 (80250489) 葛西誠也北海道大学, 大学院・工学研究科, 助教授 (30312383)
Keywords	単電子回路 / 二分決定グラフ(BDD) / ヘキサゴナルBDD量子回路 / 量子ドット / ショットキーゲート / 量子細線ネットワーク / 電力・遅延積 / 量子輸送
Research Abstract	本研究は、独自の2分決定グラフ(Binary Decision Diagram : BDD)論理アーキテクチャをもつ集積回路をナノショットキーゲートで量子ドットを形成制御する単電子BDD節点デバイスを用いて実現することを目的とする。平成15年度に得られた成果を以下に示す。 1.新しい量子論理回路方式「ヘキサゴナルBDD量子回路」に基づき、各種論理サブシステムおよび2-bit算術論理演算ユニット(ALU)の設計に成功した。また、GaAsエッチングナノ細線をショットキーラップゲート(WPG)で制御する回路実装方法で、量子細線型2ビット加算器を試作評価し、正しい論理動作を確認した。さらに、回路の大規模化を図り、8ビット加算器の試作に成功した。 2、WPG制御ナノ細線トランジスタを用いてRS-フリップフロップを試作してその動作を確認し、ナノ細線ネットワーク上に順序回路やSRAMの実装が可能であることを明らかにした。 3.エッチングGaAsナノ細線をWPGで制御したナノデバイスの動作速度評価を行いf_T=2.5GHz、f_<max>=9GHzを確認し、ギガヘルツ動作可能であることを実験的に明らかにした。また、動作特性はゲート長の短縮によりさらに向上する指針が得られた。 4.MBE選択成長GaAs量子ナノ細線にWPGを適用した量子細線スイッチを試作に成功した。評価の結果、急峻なスイッチング特性を有し、極めて低い電力・遅延積(PDP=10^<-17>J)を有することを見いだした。さらに、これを応用したBDD節点デバイスを試作して明確なパススイッチング動作を確認し、MBE選択成長量子細線ネットワークを用いたヘキサゴナルBDD量子回路の大規模超高密度実装への道を拓いた。 5.GaAs系MBE選択成長量子細線形成機構を明らかにし、構造形成制御性を高めた。また、高均一ヘキサゴナル量子ナノ細線ネットワーク形成のために、3回対称結晶配置の(111)基板を用いたInP系およびGaAs系選択成長の検討を進め、細線の方向依存性が少ないネットワーク構造の形成が可能であることを示した。 6.超薄膜Si層およびc-GaN層によるGaAsナノ構造表面不活性化について技術最適化を進めた。GaAs初期表面として均一な(4x6)再構成面を用いることで、最小界面準位密度4x10^<10>cm^<-2>eV^<-1>(Si ICL)、1x10^<11>cm^<-2>eV^<-1>(GaN ICL)でかつ周波数分散が極めて少ない表面不活性化構造を実現する技術を確立した。

Research Products

(25 results)

All Other

All Publications (25 results)

[Publications] S.Anantathanasarn: "Pinning-free GaAs MIS structures with Si interface control layers formed on (4x6) reconstructed (001) surface"Applied Surface Science. 216. 275-282 (2003)
[Publications] F.Ishikawa: "Cathodoluminescence in-depth spectroscopy study of AlGaN/GaN heterostructures"Applied Surface Science. 212-213. 885-889 (2003)
[Publications] S.Kasai: "Terahertz response of Schottky wrap gate-controlled quantum dots"Physica Status Solidi C. 0. 1329-1332 (2003)
[Publications] H.Hasegawa: "Characterization and control of surfaces and interfaces for III-V nanoelectronics"Physica Status Solidi A. 195. 9-17 (2003)
[Publications] M.Akazawa: "A UHV contactless capacitance-voltage characterization method applicable to semiconductor layers grown on insulating substrates"Physica Status Solidi A. 195. 248-254 (2003)
[Publications] T.Kakumu: "Control of order parameter during growth of In_<0.5>Ga_<0.5>P/GaAs heterostructures by gas source molecular beam epitaxy using tertiarybutylphosphine"Japanese Journal Applied Physics. 42. 2230-2236 (2003)
[Publications] H.Hasegawa: "Fabrication of AlGaN/GaN quantum nanostructures by methane-based dry etching and characterization of their electrical properties"Japanese Journal Applied Physics. 42. 2375-2381 (2003)
[Publications] S.Kasai: "Fabrication of GaAs-based integrated half and full adders by novel hexagonal BDD quantum circuit approach"Solid State Electronics. 47. 199-204 (2003)
[Publications] A.Kameda: "Effects of surface states on control characteristics of nano-meter scale Schottky gates formed on GaAs"Solid State Electronics. 47. 199-204 (2003)
[Publications] T.Hashizume: "Surface passivation of GaN and GaN/AlGaN heterostructures by dielectric films and its application to insulated-gate heterostructure transistors"Journal of Vacuum Science and Technology B. 21. 1844-1855 (2003)
[Publications] H.Hasegawa: "Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors"Journal of Vacuum Science and Technology B. 21. 1844-1855 (2003)
[Publications] N.Negoro: "Effects of Si deposition on the properties of Ga-rich (4X6) GaAs (001) surfaces"Journal of Vacuum Science and Technology B. 21. 1945-1952 (2003)
[Publications] H.Hasegawa: "Formation of III-V low dimensional structures and their applications to intelligent quantum chips"Microelectronics Journal. 34. 341-345 (2003)
[Publications] T.Hashizume: "Al_2O_3-based surface passivation and insulated gate structure for AlGaN/GaN HFETs"Physica Status Solidi C. 0. 2380-2384 (2003)
[Publications] F.Ishikawa: "Characterization of Recombination Processes in GaN by Cathodoluminescence In-Depth Spectroscopy"Physica Status Solidi C. 0. 2707-2711 (2003)
[Publications] T.Sato: "Selective MBE Growth of GaAs Ridge Quantum Wire Arrays on Patterned (001) Substrates and Its Growth Mechanism"Institute Physics Conference Series. 174. 145-148 (2003)
[Publications] H.Hasegawa: "Properties of Electronic States at Free Surfaces and Schottky Barrier Interfaces of AlGaN/GaN"Institute Physics Conference Series. 174. 299-302 (2003)
[Publications] I.Tamai: "Formation of High-Density GaAs Hexagonal Nano-Wrie Networks by Selective MBE Growth on Pre-patterned (001) Substrates"Physica E. (in press). (2004)
[Publications] S.Yoshida: "Selective Molecular Beam Epitaxy Growth of GaAs Hexagonal Nanowire Networks on (111)B Patterned Substrates"Japanese Journal of Applied Physics. (in press). (2004)
[Publications] T.Sato: "Evolution Mechanism of Heterointerface Cross Section during Growth of GaAs Ridge Quantum Wires by Selective Molecular Beam Epitaxy"Applied Surface Science. (in press). (2004)
[Publications] T.Hashizume: "Effects of Nitrogen Deficiency on Electronic Properties of AlGaN Surfaces Subjected to Thermal and Plasma Processes"Applied Surface Science. (in press). (2004)
[Publications] K.Iizuka: "Surface Plasma Wave Interactions between Semiconductor and Electromagnetic Space Harmonics from Microwave to THz Range"Thin Solid Films. (in press). (2004)
[Publications] J.Kotani: "Computer Simulation of Current Transport in GaN and AlGaN Schottky Diodes Based on Thin Surface Barrier Model"Applied Surface Science. (in press). (2004)
[Publications] A.Manaf Hashim: "Plasma Wave Interactions in Microwave to THz Range between Carriers in Semiconductor 2DEG and Interdigital Slow Waves"Superlattice and Microstructures. (in press). (2004)
[Publications] M.Yumoto: "Fabrication of BDD Quantum Node Switches on Embedded GaAs Quantum Wires Grown by Selective MBE"Superlattice and Microstructures. (in press). (2004)

2003 Fiscal Year Annual Research Report

ナノショットキーゲート制御量子ドットによるBDDアーキテクチャ単電子集積回路

Principal Investigator

長谷川 英機 北海道大学, 大学院・工学研究科, 教授 (60001781)

Research Products

[Publications] S.Anantathanasarn: "Pinning-free GaAs MIS structures with Si interface control layers formed on (4x6) reconstructed (001) surface"Applied Surface Science. 216. 275-282 (2003)

[Publications] F.Ishikawa: "Cathodoluminescence in-depth spectroscopy study of AlGaN/GaN heterostructures"Applied Surface Science. 212-213. 885-889 (2003)

[Publications] S.Kasai: "Terahertz response of Schottky wrap gate-controlled quantum dots"Physica Status Solidi C. 0. 1329-1332 (2003)

[Publications] H.Hasegawa: "Characterization and control of surfaces and interfaces for III-V nanoelectronics"Physica Status Solidi A. 195. 9-17 (2003)

[Publications] M.Akazawa: "A UHV contactless capacitance-voltage characterization method applicable to semiconductor layers grown on insulating substrates"Physica Status Solidi A. 195. 248-254 (2003)

[Publications] T.Kakumu: "Control of order parameter during growth of In_<0.5>Ga_<0.5>P/GaAs heterostructures by gas source molecular beam epitaxy using tertiarybutylphosphine"Japanese Journal Applied Physics. 42. 2230-2236 (2003)

[Publications] H.Hasegawa: "Fabrication of AlGaN/GaN quantum nanostructures by methane-based dry etching and characterization of their electrical properties"Japanese Journal Applied Physics. 42. 2375-2381 (2003)

[Publications] S.Kasai: "Fabrication of GaAs-based integrated half and full adders by novel hexagonal BDD quantum circuit approach"Solid State Electronics. 47. 199-204 (2003)

[Publications] A.Kameda: "Effects of surface states on control characteristics of nano-meter scale Schottky gates formed on GaAs"Solid State Electronics. 47. 199-204 (2003)

[Publications] T.Hashizume: "Surface passivation of GaN and GaN/AlGaN heterostructures by dielectric films and its application to insulated-gate heterostructure transistors"Journal of Vacuum Science and Technology B. 21. 1844-1855 (2003)

[Publications] H.Hasegawa: "Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors"Journal of Vacuum Science and Technology B. 21. 1844-1855 (2003)

[Publications] N.Negoro: "Effects of Si deposition on the properties of Ga-rich (4X6) GaAs (001) surfaces"Journal of Vacuum Science and Technology B. 21. 1945-1952 (2003)

[Publications] H.Hasegawa: "Formation of III-V low dimensional structures and their applications to intelligent quantum chips"Microelectronics Journal. 34. 341-345 (2003)

[Publications] T.Hashizume: "Al_2O_3-based surface passivation and insulated gate structure for AlGaN/GaN HFETs"Physica Status Solidi C. 0. 2380-2384 (2003)

[Publications] F.Ishikawa: "Characterization of Recombination Processes in GaN by Cathodoluminescence In-Depth Spectroscopy"Physica Status Solidi C. 0. 2707-2711 (2003)

[Publications] T.Sato: "Selective MBE Growth of GaAs Ridge Quantum Wire Arrays on Patterned (001) Substrates and Its Growth Mechanism"Institute Physics Conference Series. 174. 145-148 (2003)

[Publications] H.Hasegawa: "Properties of Electronic States at Free Surfaces and Schottky Barrier Interfaces of AlGaN/GaN"Institute Physics Conference Series. 174. 299-302 (2003)

[Publications] I.Tamai: "Formation of High-Density GaAs Hexagonal Nano-Wrie Networks by Selective MBE Growth on Pre-patterned (001) Substrates"Physica E. (in press). (2004)

[Publications] S.Yoshida: "Selective Molecular Beam Epitaxy Growth of GaAs Hexagonal Nanowire Networks on (111)B Patterned Substrates"Japanese Journal of Applied Physics. (in press). (2004)

[Publications] T.Sato: "Evolution Mechanism of Heterointerface Cross Section during Growth of GaAs Ridge Quantum Wires by Selective Molecular Beam Epitaxy"Applied Surface Science. (in press). (2004)

[Publications] T.Hashizume: "Effects of Nitrogen Deficiency on Electronic Properties of AlGaN Surfaces Subjected to Thermal and Plasma Processes"Applied Surface Science. (in press). (2004)

[Publications] K.Iizuka: "Surface Plasma Wave Interactions between Semiconductor and Electromagnetic Space Harmonics from Microwave to THz Range"Thin Solid Films. (in press). (2004)

[Publications] J.Kotani: "Computer Simulation of Current Transport in GaN and AlGaN Schottky Diodes Based on Thin Surface Barrier Model"Applied Surface Science. (in press). (2004)

[Publications] A.Manaf Hashim: "Plasma Wave Interactions in Microwave to THz Range between Carriers in Semiconductor 2DEG and Interdigital Slow Waves"Superlattice and Microstructures. (in press). (2004)

[Publications] M.Yumoto: "Fabrication of BDD Quantum Node Switches on Embedded GaAs Quantum Wires Grown by Selective MBE"Superlattice and Microstructures. (in press). (2004)

長谷川英機北海道大学, 大学院・工学研究科, 教授 (60001781)