2001 Fiscal Year Annual Research Report

超高キャリア濃度半導体構造を用いた超低抵抗金属/半導体接合の形成

Research Project

Project/Area Number	13355013
Research Institution	Tohoku University
Principal Investigator	室田淳一東北大学, 電気通信研究所, 教授 (70182144)
Co-Investigator(Kenkyū-buntansha)	櫻庭政夫東北大学, 電気通信研究所, 助手 (30271993) 松浦学東北大学, 電気通信研究所, 助教授 (60181690)
Keywords	IV族半導体結晶 / 不純物ドーピング / 原子層 / 金属 / 半導体接触抵抗 / CDV / SiGeC / P / B
Research Abstract	本基盤研究では、申請者らの開発してきた高清浄減圧CVD技術を駆使して、SiGeC系IV族半導体ヘテロ構造中にBやP等の不純物を超高濃度かつ局所的に原子層ドープした積層構造を形成し、各種の金属/半導体接触を製作することにより、超低抵抗接触を実現するための最適構造を実現することを目的とする。本年度はその初年度として、BやPを原子層状にドーピングした半導体積層構造を形成する研究を進めた。具体的には、本補助金により購入した高清浄減圧CVD装置を始めとする各種装置を駆使してPやBの原子層ドーピングやその上でのSiGeC系エピタキシャル成長の研究を進めた。その結果、Si表面やGe表面でのPH_3の表面吸着・反応によるP原子層形成を行ない、500℃以下でPが1〜3原子層に飽和吸着する条件を明らかにし、P原子層が熱的に安定であることを見いだした。また、B_2H_6の表面吸着・反応によるB原子層形成を行ない、B一原子層形成条件を見いだした。また、PやBの原子層表面でのSiH_4反応によるSi成長を行ない、500℃以下の低温でのSiエピタキシャル成長条件を見いだした。そして、成長したSi薄膜中でのPやB濃度分布を精密測定した結果、局所的にPあるいはB原子層ドープSiエピタキシャル積層構造が形成され、そのピーク濃度が10^<21>cm^<-3>(原子密度2%)を超える超高濃度に達していることを確認した。特に、B原子層ドーピングの場合にはlnm厚さの極薄領域のSi中にBが閉じこめられることを明らかにした。一方、P原子層ドーピングの場合には、堆積Si表面へのPのはい上がりによるP濃度分布の広がりが見られたが、P濃度を1×10^<14>cm^<-2>程度に抑えればPのはい上がりが抑制される傾向を見いだした。以上のように、超低抵抗金属/半導体接触実現のための超高濃度不純物ドープ半導体構造形成に不可欠となる大きな成果を得た。

Research Products

(21 results)

All Other

All Publications (21 results)

[Publications] T.Yamashiro et al.: "Super Self-Aligned Technology of Ultra-Shallow Junction MOSFETs Using Selective Si_<1-x>Ge_x"2001 Spring Meeting, The European Materials Research Society. D-V/P20 (2001)
[Publications] J.Murota et al.: "Atomically Precise Control of Heterointerfaces for High-Performance SiGe-Based Heterodevices"2001 Advanced Research Workshop, Future Trends in Microelectronics. 51 (2001)
[Publications] J.Murota et al.: "Atomically Controlled Processing for Group IV Semiconductors (Keynote Lecture)"9th European Conference on Applications of Surface and Interface Analysis (SIA). 20 (2001)
[Publications] T. Seino: "Atomic-Order Nitridation of SiO_2 by a Nitrogen Plasma"9th European Conference on Applications of Surface and Interface Analysis (SIA). 193 (2001)
[Publications] O.Jintsugawa et al.: "Thermal Nitridation of Ultrathin SiO_2 on Si by NH_3"9th European Conference on Applications of Surface and Interface Analysis (SIA). 194 (2001)
[Publications] J.Murota et al.: "CVD SiGe(C) Epitaxial Growth and Its Application to MOS Devices (Invited Paper)"The Sixth International Conference on Solid-State and Integrated-Circuit Technology. 525-530 (2001)
[Publications] T.Seino et al.: "Atomic-Order Plasma Nitridation of Ultrathin Silicon Dioxide Films"AVS 48th International Symposium. 53 (2001)
[Publications] Y.Hashiba: "Growth Characteristics of Si_<1-x-y>Ge_xC_y on Si(100) and SiO_2 in Ultraclean Low-Temperature LPCVD"AVS 48th International Symposium. 135 (2001)
[Publications] T.Yamashiro et al.: "Super Self-Aligned Technology of Ultra-Shallow Junction MOSFETs Using Selective Si_<1-x>Ge_x"2001 Spring Meeting, The European Materials Research Society. D-V/P20 (2001)
[Publications] J.Murota et al.: "Atomically Precise Control of Heterointerfaces for High-Performance SiGe-Based Heterodevices"2001 Advanced Research Workshop, Future Trends in Microelectronics. 51 (2001)
[Publications] J.Murota et al.: "Atomically Controlled Processing for Group IV Semiconductors (Keynote Lecture)"9th European Conference on Applications of Surface and Interface Analysis (SIA). 20 (2001)
[Publications] T.Seino: "Atomic-Order Nitridation of SiO_2 by a Nitrogen Plasma"9th European Conference on Applications of Surface and Interface Analysis (SIA). 193 (2001)
[Publications] O.Jintsugawa et al.: "Thermal Nitridation of Ultrathin SiO_2 on Si by NH_3"9th European Conference on Applications of Surface and Interface Analysis (SIA). 194 (2001)
[Publications] J.Murota et al.: "CVD SiGe(C) Epitaxial Growth and Its Application to MOS Devices (Invited Paper)"The Sixth International Conference on Solid-State and Integrated-Circuit Technology. 525-530 (2001)
[Publications] T.Seino et al.: "Atomic-Order Plasma Nitridation of Ultrathin Silicon Dioxide Films"AVS 48th International Symposium. 53 (2001)
[Publications] Y.Hashiba: "Growth Characteristics of Si_<1-x-y>Ge_xC_y on Si(100) and SiO_2 in Ultraclean Low-Temperature LPCVD"AVS 48th International Symposium. 135 (2001)
[Publications] D. Muto et al.: "Self-Limited Layer-by-Layer Growth of Si by Alternated SiH_4 Supply and Ar Plasma Exposure"AVS 48th International Symposium. 179 (2001)
[Publications] T Matsuura et al.: "Application of Photosensitive Methylsilsesquiazane(MSZ) to Lithographic Fabrication of Three Dimensional Periodic Structures"AVS 48th International Symposium. 229 (2001)
[Publications] Y.C.Jeong et al.: "Si Epitaxial Growth on the Atomic-Order Nitrided Si(1OO) Surface in SiH_4 Reaction"2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices. Abs.8.3 (2001)
[Publications] Y.Shimamune et al.: "Heavy Doping Characteristics of Si Films Epitaxially Grown at 450℃ by Alternately Supplied PH_3 and SiH_4"2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices. Abs.8.4 (2001)
[Publications] D.Kruger et al.: "Transient Processes and Structural Transformations in Si and Si_xGe_<1-x> Layers During Oxygen Implantation and Sputtering"13th International Conference on Secondary Ion Mass Spectrometry and Related Topics (SIMS XIII). 108 (2001)

2001 Fiscal Year Annual Research Report

超高キャリア濃度半導体構造を用いた超低抵抗金属/半導体接合の形成

Principal Investigator

室田 淳一 東北大学, 電気通信研究所, 教授 (70182144)

Research Products

[Publications] T.Yamashiro et al.: "Super Self-Aligned Technology of Ultra-Shallow Junction MOSFETs Using Selective Si_<1-x>Ge_x"2001 Spring Meeting, The European Materials Research Society. D-V/P20 (2001)

[Publications] J.Murota et al.: "Atomically Precise Control of Heterointerfaces for High-Performance SiGe-Based Heterodevices"2001 Advanced Research Workshop, Future Trends in Microelectronics. 51 (2001)

[Publications] J.Murota et al.: "Atomically Controlled Processing for Group IV Semiconductors (Keynote Lecture)"9th European Conference on Applications of Surface and Interface Analysis (SIA). 20 (2001)

[Publications] T. Seino: "Atomic-Order Nitridation of SiO_2 by a Nitrogen Plasma"9th European Conference on Applications of Surface and Interface Analysis (SIA). 193 (2001)

[Publications] O.Jintsugawa et al.: "Thermal Nitridation of Ultrathin SiO_2 on Si by NH_3"9th European Conference on Applications of Surface and Interface Analysis (SIA). 194 (2001)

[Publications] J.Murota et al.: "CVD SiGe(C) Epitaxial Growth and Its Application to MOS Devices (Invited Paper)"The Sixth International Conference on Solid-State and Integrated-Circuit Technology. 525-530 (2001)

[Publications] T.Seino et al.: "Atomic-Order Plasma Nitridation of Ultrathin Silicon Dioxide Films"AVS 48th International Symposium. 53 (2001)

[Publications] Y.Hashiba: "Growth Characteristics of Si_<1-x-y>Ge_xC_y on Si(100) and SiO_2 in Ultraclean Low-Temperature LPCVD"AVS 48th International Symposium. 135 (2001)

[Publications] T.Yamashiro et al.: "Super Self-Aligned Technology of Ultra-Shallow Junction MOSFETs Using Selective Si_<1-x>Ge_x"2001 Spring Meeting, The European Materials Research Society. D-V/P20 (2001)

[Publications] J.Murota et al.: "Atomically Precise Control of Heterointerfaces for High-Performance SiGe-Based Heterodevices"2001 Advanced Research Workshop, Future Trends in Microelectronics. 51 (2001)

[Publications] J.Murota et al.: "Atomically Controlled Processing for Group IV Semiconductors (Keynote Lecture)"9th European Conference on Applications of Surface and Interface Analysis (SIA). 20 (2001)

[Publications] T.Seino: "Atomic-Order Nitridation of SiO_2 by a Nitrogen Plasma"9th European Conference on Applications of Surface and Interface Analysis (SIA). 193 (2001)

[Publications] O.Jintsugawa et al.: "Thermal Nitridation of Ultrathin SiO_2 on Si by NH_3"9th European Conference on Applications of Surface and Interface Analysis (SIA). 194 (2001)

[Publications] J.Murota et al.: "CVD SiGe(C) Epitaxial Growth and Its Application to MOS Devices (Invited Paper)"The Sixth International Conference on Solid-State and Integrated-Circuit Technology. 525-530 (2001)

[Publications] T.Seino et al.: "Atomic-Order Plasma Nitridation of Ultrathin Silicon Dioxide Films"AVS 48th International Symposium. 53 (2001)

[Publications] Y.Hashiba: "Growth Characteristics of Si_<1-x-y>Ge_xC_y on Si(100) and SiO_2 in Ultraclean Low-Temperature LPCVD"AVS 48th International Symposium. 135 (2001)

[Publications] D. Muto et al.: "Self-Limited Layer-by-Layer Growth of Si by Alternated SiH_4 Supply and Ar Plasma Exposure"AVS 48th International Symposium. 179 (2001)

[Publications] T Matsuura et al.: "Application of Photosensitive Methylsilsesquiazane(MSZ) to Lithographic Fabrication of Three Dimensional Periodic Structures"AVS 48th International Symposium. 229 (2001)

[Publications] Y.C.Jeong et al.: "Si Epitaxial Growth on the Atomic-Order Nitrided Si(1OO) Surface in SiH_4 Reaction"2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices. Abs.8.3 (2001)

[Publications] Y.Shimamune et al.: "Heavy Doping Characteristics of Si Films Epitaxially Grown at 450℃ by Alternately Supplied PH_3 and SiH_4"2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices. Abs.8.4 (2001)

[Publications] D.Kruger et al.: "Transient Processes and Structural Transformations in Si and Si_xGe_<1-x> Layers During Oxygen Implantation and Sputtering"13th International Conference on Secondary Ion Mass Spectrometry and Related Topics (SIMS XIII). 108 (2001)

室田淳一東北大学, 電気通信研究所, 教授 (70182144)