2002 Fiscal Year Annual Research Report

超高キャリア濃度半導体構造を用いた超低抵抗金属/半導体接合の形成

Research Project

Project/Area Number	13355013
Research Institution	Tohoku University
Principal Investigator	室田淳一東北大学, 電気通信研究所, 教授 (70182144)
Co-Investigator(Kenkyū-buntansha)	目黒敏靖東北大学, 電気通信研究所, 助手 (50182150) 櫻庭政夫東北大学, 電気通信研究所, 助教授 (30271993)
Keywords	IV族半導体 / 不純物ドーピング / 原子層 / 金属 / 半導体接触抵抗 / CVD / SiGeC / P / B
Research Abstract	本基盤研究では、申請者らの開発してきた高清浄減圧CVD技術を駆使して、SiGeC系IV族半導体ヘテロ構造中にBやP等の不純物を超高濃度かつ局所的に原子層ドープした積層構造を形成し、各種の金属/半導体接触を製作することにより、超低抵抗接触を実現するための最適構造を実現することを目的とする。本年度はその第2年目として、BやPを原子層状にドーピングした半導体積層構造を形成する研究を進めた。具体的には、本補助金により購入した高清浄減圧CVD装置を始めとする各種装置を駆使してPの原子層ドーピングに引き続き、B原子層形成やその上でのSiGeC系エピタキシャル成長についても研究を進めた。その結果、500℃以下の低温Siエピタキシャル成長におけるB原子層ドーピングにおいて、B_2H_6反応によるB原子層形成を200℃で行なうことによりBのクラスタリングが抑制され、B原子が電気的に活性化しやすいことを見いだした。また、高温熱処理により形成した熱平衡PドープSi結晶と比較し、P原子層ドープSiエピタキシャル薄膜のキャリア濃度は高く、熱処理によりP原子の電気的活性化率が低下する現象も明らかにした。これらのことから、500℃以下の低温Siエピタキシャル成長による非平衡状態での不純物ドーピング法が超高キャリア濃度不純物ドープ半導体形成の実現のために重要であるという指針を得た。さらに、P原子層ドーピングの繰り返し法により形成した超高濃度不純物Si薄膜表面を適用することにより、10^<-7>Ωcm^2以下の超低抵抗金属/半導体接触を実現した。以上のように、超低抵抗金属/半導体接触実現のための超高濃度不純物ドープ半導体構造形成において大きな成果を得た。

Research Products

(16 results)

All Other

All Publications (16 results)

[Publications] J.Murota et al.: "Atomically controlled processing for group IV semiconductors"Surf. Interface Anal.. Vol.34. 423-431 (2002)
[Publications] O.Jintsugawa et al.: "Thermal nitridation of ultratbin SiO_2 on Si by NH_3"Surf. Interface Anal.. Vol.34. 456-459 (2002)
[Publications] Y.C.Jeong et al.: "Atomic-Layer Doping of N in Si Epitaxial Growth on Si(100)and its Thermal Stability"Proceedings of the 19th International Symposium on Silicon Material Science and Technology, 201th Meeting of the Electrochemical Society. 287-296 (2002)
[Publications] M.Mori et al.: "Si Epitaxial Growth on Atomic-Order Nitrided Si(100)Using an ECR Plasma"201st Meeting of The Electrochemical Society. 402 (2002)
[Publications] J.Murota et al.: "Atomically Controlled Heterostructure Growth of Group IV Semiconductors"3rd"Trends in Nano Technology"International Conference(TNT 2002). 377 (2002)
[Publications] J.Murota et al.: "SiGe Epitaxial CVD Technology for Si-Based Ultrasmall Devices(Invited Paper)"Meeting Abstracts of International Semiconductor Technology Conference (ISTC 2002), The Electrochemical Society. 53 (2002)
[Publications] D.Lee et al.: "0.1μm pMOSFETs with SiGe-Channel and B-Doped SiGe Source/Drain Layers"Extended Abstracts of the 2002 Int. Conf. on Solid State Devices and Materials(SSDM 2002). 764-765 (2002)
[Publications] D.Lee et al.: "Fabrication of 0.12μm SiGe-Channel MOSFET Containing High Ge Fraction with Ultrashallow Source/Drain Formed by Selective B-Doped SiGe CVD"First International SiGe Technology and Device Meeting(ISTDM 2003). 17-18 (2003)
[Publications] J.Noh et al.: "Relationship between Total Impurity(B or P)and Carrier Concentrations in SiGe Epitaxial Film Produced by the Thermal Treatment"First International SiGe Technology and Device Meeting(ISTDM 2003). 165-166 (2003)
[Publications] H.-S.Cho et al.: "Etching Characteristics of Impurity-Doped Si_<1-x>Ge_x Epitaxial Films Using Electron-Cyclotron-Resonance Chlorine Plasma"First International SiGe Technology and Device Meeting(ISTDM 2003). 181-182 (2003)
[Publications] Y.C.Jeong et al.: "Epitaxial Growth of N Delta Doped Si Films on Si(100)by Alternately Supplied NH_3 and SiH_4"First International SiGe Technology and Device Meeting(ISTDM 2003). 243-244 (2003)
[Publications] Y.Shimamune et al.: "Formation of Heavily P Doped Si Epitaxial Film on Si(100)by Multiple Atomic-Layer Doping Technique"First International SiGe Technolgy and Device Meeting(ISTDM 2003). 247-248 (2003)
[Publications] M.Fujiu et al.: "Carbon Effect on Thermal Stability of Si Atomic Layer on Ge(100)"First International SiGe Technology and Device Meeting(ISTDM 2003). 249-250 (2003)
[Publications] D.Muto et al.: "Ar Plasma Irradiation Effects in Atomically Controlled Si Epitaxial Growth"First International SiGe Technology and Device Meeting(ISTDM 2003). 251-252 (2003)
[Publications] D.Muto et al.: "Atomically Controlled Silane Reaction on Si(100)Using Ar Plasma Irradiation without Substrate Heating"3rd Int. Conf. on SiGe(C)Epitaxy and Heterostructures(ICSI3). 59-61 (2003)
[Publications] S.Takehiro et al.: "Characterization of High Ge Fraction SiGe-Channel MOSFET with Ultrashallow Source/Drain Formation by Selective B-Doped SiGe CVD"3rd Int. Conf. on SiGe(C)Epitaxy and Heterostructures(ICSI3). 179-181 (2003)

2002 Fiscal Year Annual Research Report

超高キャリア濃度半導体構造を用いた超低抵抗金属/半導体接合の形成

Principal Investigator

室田 淳一 東北大学, 電気通信研究所, 教授 (70182144)

Research Products

[Publications] J.Murota et al.: "Atomically controlled processing for group IV semiconductors"Surf. Interface Anal.. Vol.34. 423-431 (2002)

[Publications] O.Jintsugawa et al.: "Thermal nitridation of ultratbin SiO_2 on Si by NH_3"Surf. Interface Anal.. Vol.34. 456-459 (2002)

[Publications] Y.C.Jeong et al.: "Atomic-Layer Doping of N in Si Epitaxial Growth on Si(100)and its Thermal Stability"Proceedings of the 19th International Symposium on Silicon Material Science and Technology, 201th Meeting of the Electrochemical Society. 287-296 (2002)

[Publications] M.Mori et al.: "Si Epitaxial Growth on Atomic-Order Nitrided Si(100)Using an ECR Plasma"201st Meeting of The Electrochemical Society. 402 (2002)

[Publications] J.Murota et al.: "Atomically Controlled Heterostructure Growth of Group IV Semiconductors"3rd"Trends in Nano Technology"International Conference(TNT 2002). 377 (2002)

[Publications] J.Murota et al.: "SiGe Epitaxial CVD Technology for Si-Based Ultrasmall Devices(Invited Paper)"Meeting Abstracts of International Semiconductor Technology Conference (ISTC 2002), The Electrochemical Society. 53 (2002)

[Publications] D.Lee et al.: "0.1μm pMOSFETs with SiGe-Channel and B-Doped SiGe Source/Drain Layers"Extended Abstracts of the 2002 Int. Conf. on Solid State Devices and Materials(SSDM 2002). 764-765 (2002)

[Publications] D.Lee et al.: "Fabrication of 0.12μm SiGe-Channel MOSFET Containing High Ge Fraction with Ultrashallow Source/Drain Formed by Selective B-Doped SiGe CVD"First International SiGe Technology and Device Meeting(ISTDM 2003). 17-18 (2003)

[Publications] J.Noh et al.: "Relationship between Total Impurity(B or P)and Carrier Concentrations in SiGe Epitaxial Film Produced by the Thermal Treatment"First International SiGe Technology and Device Meeting(ISTDM 2003). 165-166 (2003)

[Publications] H.-S.Cho et al.: "Etching Characteristics of Impurity-Doped Si_<1-x>Ge_x Epitaxial Films Using Electron-Cyclotron-Resonance Chlorine Plasma"First International SiGe Technology and Device Meeting(ISTDM 2003). 181-182 (2003)

[Publications] Y.C.Jeong et al.: "Epitaxial Growth of N Delta Doped Si Films on Si(100)by Alternately Supplied NH_3 and SiH_4"First International SiGe Technology and Device Meeting(ISTDM 2003). 243-244 (2003)

[Publications] Y.Shimamune et al.: "Formation of Heavily P Doped Si Epitaxial Film on Si(100)by Multiple Atomic-Layer Doping Technique"First International SiGe Technolgy and Device Meeting(ISTDM 2003). 247-248 (2003)

[Publications] M.Fujiu et al.: "Carbon Effect on Thermal Stability of Si Atomic Layer on Ge(100)"First International SiGe Technology and Device Meeting(ISTDM 2003). 249-250 (2003)

[Publications] D.Muto et al.: "Ar Plasma Irradiation Effects in Atomically Controlled Si Epitaxial Growth"First International SiGe Technology and Device Meeting(ISTDM 2003). 251-252 (2003)

[Publications] D.Muto et al.: "Atomically Controlled Silane Reaction on Si(100)Using Ar Plasma Irradiation without Substrate Heating"3rd Int. Conf. on SiGe(C)Epitaxy and Heterostructures(ICSI3). 59-61 (2003)

[Publications] S.Takehiro et al.: "Characterization of High Ge Fraction SiGe-Channel MOSFET with Ultrashallow Source/Drain Formation by Selective B-Doped SiGe CVD"3rd Int. Conf. on SiGe(C)Epitaxy and Heterostructures(ICSI3). 179-181 (2003)

室田淳一東北大学, 電気通信研究所, 教授 (70182144)