| Research Abstract |
In recent years the Research, which is going to develop the quantum effect, devices, such as single electronic transistors (SETs), is actively made by improvement in semiconductor ultra-fine processing technology. The specific "self-organization" phenomenon which carries out self-formation of the detailed structure very much attracts attention by distortion by the difference in the lattice constant of a material composition atom in recent years as processing technology which complements the ultra-fine processing technology using the ion beam, the electronic beam, etc. as a means to produce those devices.
However, InAs quantum dots (QDs) has indispensable position contrl of each dots which carried out self-organization growth, in order for a large number to grow at rapdom, and apply to a single electron device. Then, in this research, it gazed at the application to a single electron device, and the technique of performing anode oxidization using the atomic force microscope (AFM) which we have developed by present was used.
First, InAs QDs were grown up by using molecular beam epitaxy (MBE) method, and QD's density is decreased and migration was tried. Decreased density was raised by 40 degrees to 70 degrees from the substrate temperature in the state where the InAs QDs was grown up. It has figured out that decreased density, when the QDs migrated theoretically and dots join together or evaporated.
Next, position control of InAs QDs were tried by performing detailed processing on a GaAs substrate by using the AFM oxidation, producing a nano-template, growing up InAs QDs and carrying out in-situ annealing on it.
Consequently, the phenomenon which an InAs quantum dot moves to the nano-hole which migrated by in-situ annealing, and which was processed by the AFM oxidation has been figured out.
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