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2003 Fiscal Year Final Research Report Summary

Position control of InAs quantum dots by using AFM oxidation method and application to single electron transistor

Research Project

Project/Area Number 13450124
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionTokyo Institute of Technology

Principal Investigator

KONAGAI Makoto  Tokyo institute of Technology, Graduate school of Science and Engineering, Professor, 大学院・理工学研究科, 教授 (40111653)

Co-Investigator(Kenkyū-buntansha) YAMADA Akira  Tokyo Institute of Technology, Research Center For Quantum Effecct Electronics, Associate Professor, 量子効果エレクトロニクス研究センター, 助教授 (40220363)
Project Period (FY) 2001 – 2003
KeywordsAFM oxidation / InAs / Quantum dots
Research Abstract

In recent years the Research, which is going to develop the quantum effect, devices, such as single electronic transistors (SETs), is actively made by improvement in semiconductor ultra-fine processing technology. The specific "self-organization" phenomenon which carries out self-formation of the detailed structure very much attracts attention by distortion by the difference in the lattice constant of a material composition atom in recent years as processing technology which complements the ultra-fine processing technology using the ion beam, the electronic beam, etc. as a means to produce those devices.
However, InAs quantum dots (QDs) has indispensable position contrl of each dots which carried out self-organization growth, in order for a large number to grow at rapdom, and apply to a single electron device. Then, in this research, it gazed at the application to a single electron device, and the technique of performing anode oxidization using the atomic force microscope (AFM) which we have developed by present was used.
First, InAs QDs were grown up by using molecular beam epitaxy (MBE) method, and QD's density is decreased and migration was tried. Decreased density was raised by 40 degrees to 70 degrees from the substrate temperature in the state where the InAs QDs was grown up. It has figured out that decreased density, when the QDs migrated theoretically and dots join together or evaporated.
Next, position control of InAs QDs were tried by performing detailed processing on a GaAs substrate by using the AFM oxidation, producing a nano-template, growing up InAs QDs and carrying out in-situ annealing on it.
Consequently, the phenomenon which an InAs quantum dot moves to the nano-hole which migrated by in-situ annealing, and which was processed by the AFM oxidation has been figured out.

  • Research Products

    (5 results)

All Other

All Publications (5 results)

  • [Publications] Yuichi MATSUZAKI: "Improvement in Aspect Ration of P-GaAs Oxide Fabrication by Atomic Force Microscope (AFM)-Based Nanolithography Using Pulsed Voltage"Japanese Journal of Applied Physics. 40[6B]. 4325-4327 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Yuichi Matsuzaki: "Formation of Nano-oxide Regions in p^<2+>-GaAs Epilayers by Localized Atomic Force Microscope Probe Oxidation for Fabrication of Nano-structure Device"J.Crystal Growth. 251. 276-280 (2003)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Yuichi MATSUZAKI, Shigeki HASUI, Shin-ya KAMADA, Akira YAMADA, Makoto KONAGAI: "Improvement in Aspect Ration of P-GaAs Oxide Fabrication by Atomic Force Microscope (AFM)-Based Nanolithography Using Pulsed Voltage"Japanese Journal of Applied Physics. 40[6B]. 4325-4327 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Yuichi Matsuzaki, Narihisa Ota, Akira Yamada, Makoto Konagai: "Formation of Nano-oxide Regions in p^<2+>-GaAs Epilayers by Localized Atomic Force Microscope Probe Oxidation for Fabrication of Nano-structure Device 2002 International Conference on Molecular Beam Epitaxy"J. Crystal Growth. 251. 276-280 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Ritsuo Ohashi, Tomohiko Ohtsuka, Narihisa Ohta, Akira Yamara, Makoto Konagai: "Position control of InAs Quantum Dots by AFM Oxidation"Thin Solid Films.

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 2005-04-19  

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