2003 Fiscal Year Final Research Report Summary
Development of Advanced Temperature Recording Device for Monitoring Irradiation Environment of Nuclear Power Reactor
| Project/Area Number |
13480139
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Nuclear engineering
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| Research Institution | Tohoku University |
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Principal Investigator |
ABE Katsunori Tohoku Univ., Graduate School of Engineering, Professor, 大学院・工学研究科, 教授 (70005940)
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| Co-Investigator(Kenkyū-buntansha) |
HASEGAWA Akira Tohoku Univ., Graduate School of Engineering, Associate Professor, 大学院・工学研究科, 助教授 (80241545)
SATOU Manabu Tohoku Univ., Graduate School of Engineering, Research Associate, 大学院・工学研究科, 助手 (40226006)
FUJIWARA Mitsuhiro Tohoku Univ., Graduate School of Engineering, Research Associate, 大学院・工学研究科, 助手 (60333861)
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| Project Period (FY) |
2001 – 2003
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| Keywords | Temperature Monitoring of Nuclear Power Reactor / Irradiation temperature history / Silicon Carbide / Ion beam fabrication / Light Ion Irradiation / Blistering |
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| Research Abstract |
Performance tests of the temperature history monitor up to 1200C have been carried out for the trial SiC pieces, which have irradiated area and un-irradiated area in the same face. The un-irradiated area was covered by Cu mesh mask when ion implantation was conducted using 3MeV He ion at room temperature. The irradiated area swelled by displacement damage due to implantation. Blistering behavior of the irradiated area was compared to that of the un-irradiated area.
It was found that the starting temperature of clear blistering depended on He fluences. When the fluence was as low as blistering never occur until 900C, blistering will not occur subsequent heating up to 900C. In this research period, to clarify material dependence of blistering behavior, single crystal of alpha-SiC was utilized which had less effect of grain-boundary and higher purity in addition to previous used beta-SiC poly-crystals. Thermal desorption spectroscopy analysis of helium release showed no significant differences between with and without grain boundary in the SiC. It was concluded that crystallinity of base material did not generally affect blistering behaviors at the temperature range that volumetric changing and exfoliation occur significantly.
From the obtained results of the dependence on temperature and on fluence of He ion implantation of surface exfoliation, it is proposed that micro-mesh arrays prepared on beta-SiC poly-crystals by He ion implantation at room temperature to the fluences of 0.5~1.2x10^<22>ions/m^2 using 570keV and 1.7MeV have capability to monitor the temperature ranging from 300 to 1000C.
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Research Products
(8 results)
