| Project/Area Number |
13558063
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 展開研究 |
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| Research Field |
Nuclear engineering
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| Research Institution | Osaka University |
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Principal Investigator |
SEKI Shuhei Osaka University, The Institute of Scientific and Industrial Research, Assoc. Prof., 産業科学研究所, 助教授 (30273709)
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| Co-Investigator(Kenkyū-buntansha) |
YOSHIDA Yoichi Osaka University, The Institute of Scientific and Industrial Research, Prof., 産業科学研究所, 教授 (50210729)
YAMAMOTO Yukio Osaka University, The Institute of Scientific and Industrial Research, Assoc. Prof., 産業科学研究所, 助教授 (10029902)
TAGAWA Seiichi Osaka University, The Institute of Scientific and Industrial Research, Prof., 産業科学研究所, 教授 (80011203)
SUGIMOTO Masaki Japan Atomic Energy Research Institute, Takasaki Research Establishment, Vice Group Leader, 高崎研究所, 副主任研究員
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| Project Period (FY) |
2001 – 2003
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| Keywords | Ion Beam / Single Event / Nanowire / Ion Track / Nanotube / SiC / Polysilane / Nanostructure |
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| Research Abstract |
Nano-wire formation in Si-based polymer thin films using a heavy ion beam is discussed in terms of energy density deposition along ion tracks. Gelation of the polymer along the ion track results in cross-linking to produce nano-wires with size and number density controllable by selecting appropriate ion beam characteristics and polymer materials. Ion bombardment of polycarbosilane (PCS), PCS-polyvinylsilane blend polymer, and polymethylphenylsilane produces nano-wires with radii of 7-30 run depending on the type of ion beam. The difference in size is shown to be related to the efficiency of the cross-linking reaction considering the deposited energy distribution along the ion tracks. The energy density deposited by incident ions and the molecular weight of the target polymer materials principally determine the thickness of the nanowires at any discrete radius in this range. Surface treatment of a substrate completely controls the adhesion of the nanowires, which makes it possible to pattern the nanowire distribution on the substrate. Nanogap platinum electrodes with 100 nm gap width are fabricated on the nanowire dispersed SiO2 substrate by a lift-off method with electron beam lithography techniques. Current-voltage analysis of the nanowires in the gap clearly indicates intrinsic semiconductive features based on crosslinked polysilanes.
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