2002 Fiscal Year Final Research Report Summary
Chemical synthesis and thin film growth of oxide semiconductor nanoparticles
Project/Area Number |
13650351
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Research Category |
Grant-in-Aid for Scientific Research (C)
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Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Electronic materials/Electric materials
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Research Institution | AOYAMA GAKUIN UNIVERSITY |
Principal Investigator |
NAKADA Tokio Aoyama Gakuin University, College of Science and Engineering, Professor, 理工学部, 助教授 (90082825)
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Co-Investigator(Kenkyū-buntansha) |
INAYOSHI Tomoko Aoyama Gakuin University, College of Science and Engineering, Research Associate, 理工学部, 助手 (40082862)
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Project Period (FY) |
2001 – 2002
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Keywords | ZnO / zinc oxides / nanoparticles / nanoparticle ink / thin films / dipping / oxide semiconductors / chemical synthesis |
Research Abstract |
The chemical synthesis and thin film growth of zinc oxide (ZnO) nanoparticles have been investigated. The synthesis of ZnO nanoparticle was carried out by the following procedure. Zinc acetate anhydrate(Zn(CH_3COO)_2) was dissolved in absolute ethanol (C_2H_5OH) and cooled at 0℃. Lithium hydroxide (LiOH) was added to the above solution and stirred, followed by storing at low temperature for more than 1 week. To remove Lithium acetate and water of reaction by-products, hexane was added to the solution and separated by centrifugation. The precipitate in the centrifuge was re-dispersed on fresh ethanol. The solution of colorless transparent ZnO nanoparticle was prepared. The electron diffraction pattern revealed that the crystal structure of the particle was identified with a hexagonal ZnO (zincite, JCPDS-361451). It was also found by transmission electron microscopy that, the size was around 4 nm for as-grown ZnO particles. ZnO thin films were prepared by the following procedure. The glass substrate was dipped into the solution of ZnO nanoparticles. The ZnO precursor film was dried, and then annealed in air at 100〜500℃. Approximately 200nm-thick ZnO thin film with hexagonal zincite structure was obtained at annealing temperature of 400〜500℃. The optical transmission of the ZnO films was more than 90%. The crystal grain size increased with annealing temperature and was found to be 13 nm. Based on the above results It was revealed that the ZnO nanoparticles and thin films could be prepared by using an inexpensive non vacuum process.
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