2002 Fiscal Year Final Research Report Summary
Study on Web Hub System of Nano-Eledronic Device Modeling
| Project/Area Number |
13650378
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (C)
|
| Allocation Type | Single-year Grants |
|---|
| Section | 一般 |
|---|
| Research Field |
電子デバイス・機器工学
|
|---|
| Research Institution | Kobe University |
|---|
Principal Investigator |
OGAWA Matsuto Kobe Univ.School of Electric, & Electon., Prof., 工学部, 教授 (40177142)
|
|---|
| Project Period (FY) |
2001 – 2002
|
| Keywords | Non-Equilibrium Green's Function / Tight-Binding Approximation / Nano-Scale MOSFET / Ab-Initio Density Functional Calculation / Quantum Transport Analysis / Device Modeling / Web Hub |
|---|
| Research Abstract |
The following results have been successfully achieved during allotted period of this project research.
1. Development of Semiconductor Band Structure Calculation Programs Based on Tight-Binding Approximation
Automatic Hamiltonian generation of arbitrary III-V compound semiconductor has been achieved. We have developed a new code to extract tight-binding (TB) parameters of arbitrary crystals such as a diamond, zinc-blende, cubic, or hexagonal crystallographic structures. This code utilizes a genetic algorithm (GA) which enables us to extract tight-binding parameters from results of ab-initio density functional (DFT) band calculation without falling into local minima. As a result, we have extracted various kinds of TB parameters from which we can readily calculate band structures as well as optical properties of compound semiconductors.
2. Quantum Transport Modeling in Nano-scale MOSFETs
We have made use of the non-equilibrium Green's function method to analyze quantum transport phenomena in nano-scale devices, specifically deca-nm size MOSFETs. In the simulation, we have used the material parameters of the crystal we extracted by the GA technique. As a result, it is found that the surface quantization occurs at the Si-SiO2 interface and the electron waves transport from size-quantized modes in one electrode to the surface quatized mode and then to the size-quantized mode in the other electrode. It is demonstrated that the present modeling tool is powerful in the analysis of nano-scale devices where quantum effects play important roles.
|
Research Products
(8 results)
