2002 Fiscal Year Final Research Report Summary
Fabrication of highly oriented carbon-nanotube films and its application to an emitter with high efficiency
Project/Area Number |
13650737
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Research Category |
Grant-in-Aid for Scientific Research (C)
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Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Inorganic materials/Physical properties
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Research Institution | Shizuoka University |
Principal Investigator |
MATSUMOTO Koichi Research Institute of Electronics, Associate Professor, 電子工学研究所, 助教授 (10022138)
|
Co-Investigator(Kenkyū-buntansha) |
MURAKAMI Kenji Research Institute of Electronics, Associate Professor, 電子工学研究所, 助教授 (30182091)
YAMAGUCHI Tomuo Research Institute of Electronics, Professor, 電子工学研究所, 教授 (40010938)
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Project Period (FY) |
2001 – 2002
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Keywords | carbon nanotube / carbon / nanotube / silicon carbide / SiC / surface / ellipsometry |
Research Abstract |
In order to investigate the initial stage of carbon-nanotube(CNT) formation at the surface decomposition of SiC, we heated the SiC single-crystal substrates (6H-type, C-face polished) in vacuum using an infrared mirror furnace and a turbo-molecular pump, and we analyzed the structure change at the surfaces by means of spectro-ellipsometric measurements. Up to 1100℃, the change in spectra could be interpreted as the decrease of thickness of SiO_2 layer (〜4 nm) on the SiC substrate. At 1150℃ and above, however, spectra were distinctly different from those of the samples heated up to 1100℃, and could be interpreted with a three-phase model, in which the surface layer consists of graphite including X% of voids, where the surface layer thickness t = 10〜50 nm and X = 50〜70%. This indicates that the surface decomposition of SiC is initiated at this temperature and that the spectro-ellipsometric measurements can detect small changes of optical properties of surface due to the initiation of decomposition. When the substrates were heated for a longer time (80〜640 min) at 1300℃, the spectra were essentially different again, and they could be interpreted with a four-phase model, in which the surface layer consists of two graphite layers including different percentages of voids, where the thickness of surface layers t_1 = 20〜50 nm, t_2 = 20〜60 nm and the percentages of voids X = 〜90%, Y = 〜50%. This implied that formation of CNT would start at this temperature. This formation was also detected by FE-SEM observation.
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Research Products
(2 results)