2002 Fiscal Year Annual Research Report

広い可視光領域をカバーする光デバイス用材料の開拓

Research Project

Project/Area Number	14041213
Research Institution	Sophia University
Principal Investigator	岸野克巳上智大学, 理工学部, 教授 (90134824)
Keywords	可視光デバイス / 半導体レーザ / 発光ダイオード / II-VI族半導体 / InP基板 / 超格子 / MgZnCdSe / BeZnTe
Research Abstract	本研究では、広い可視光領域をカバーする光デバイス材料の開拓を目的としてII-VI族半導体やIII-V窒化物半導体新材料の開発を目指した。特に本年度は最も材料開発が進んでいるInP基板上II-VI族半導体に焦点を絞り、MgZnCdSe/BeZnTe系超格子材料の開拓及び発光ダイオード(LED)/レーザの開発を行った。得られた成果を以下に述べる。 1.ZnCdSe/BeZnTe超格子及びMgSe/BeZnTe超格子を分子線エピタキシー(MBE)法により作製し特性を評価した。ZnCdSe/BeZnTe超格子のフォトルミネッセンス(PL)測定では、超格子の層厚比を変えることで507nm(青緑)から740nm(赤)の広い可視光領域において発光ピークが観測された。また、ZnCdSe/BeZnTe、MgSe/BeZnTe超格子の反射率測定より屈折率を明らかにし、これら超格子により構成されたレーザ構造において光閉じ込めを得るための十分な屈折率段差があることが示された。 2.活性層をZnCdSe/BeZnTe超格子、pクラッドを窒素(N)ドープMgSe/BeZnTe超格子、nクラッドを塩素(Cl)ドープMgSe/ZnCdSe超格子としたLEDを作製し評価した。活性層の超格子構造を変えることで554nm(黄緑色)から644nm(赤色)の良好な単峰性発光が得られた。さらに、3500時間以上の連続動作を達成し、この材料系/デバイスの高信頼性を示した。 3.活性層を10nm厚ZnCdSe、nクラッド及びn側光閉じ込め層をClドープMgSe/ZnCdSe超格子、pクラッド及びp側光閉じ込め層をNドープMgSe/BeZnTe超格子としたレーザを作製した。77Kでのパルス電流駆動によりこの材料で世界初の560nm帯黄緑色レーザ発振を得た。しきい値電流(密度)は270mA(2.5kA/cm^2)であった。

Research Products

(16 results)

All Other

All Publications (16 results)

[Publications] Song-Bek Che: "Growth and characterization of ZnCdSe/BeZnTe II-VI compound type-II superlattices on InP substrates and their application for visible light emitting devices"Japanese Journal of Applied Physics. Vol.40,No.12. 6747-6752 (2002)
[Publications] Song-Bek Che: "Novel ZnCdSe/BeZnTe type-II superlattice structure grown on InP substrates by MBE"Journal of Korean Physical Society. Vol.39. S18-S22 (2002)
[Publications] Kazuhiro Fukada: "Reduction of defect density of ZnCdSe on InP substrates by introducing BeZnTe buffer layers"physica status solidi (b). Vol.229,No.1. 107-110 (2002)
[Publications] Ichirou Nomura: "Refractive index measurements of BeZnTe and related superlattices on InP and application for waveguide analysis of MgZnCdSe/BeZnTe visible lasers"physica status solidi (b). Vol.229,No.2. 987-990 (2002)
[Publications] Song-Bek Che: "Visible light emitting diode with ZnCdSe/BeZnTe superlattices as an active layer and MgSe/BeZnTe superlattices as a p-cladding layer"physica status solidi (b). Vol.229,No.2. 1001-1004 (2002)
[Publications] Katsumi Kishino: "ZnCdTe/ZnTe light emitting diodes with CdSe n-type contact layers grown on_ZnTe_substrates by molecular beam epitaxy"physica status solidi (b). Vol.229,No.2. 991-994 (2002)
[Publications] Katsumi Kishino: "Improved molecular beam epitaxy for fabricating AlGaN/GaN heterojunction devices"physica status solidi (a). Vol.190,No.1. 23-31 (2002)
[Publications] Katsumi Kishino: "Intersubband absorption at λ〜1.2-1.6μm in GaN/AlN multiple quantum wells grown by rf-plasma molecular beam epitaxy"physica status solidi (a). Vol.192,No.1. 124-128 (2002)
[Publications] Song-Bek Che: "MgZnCdSe/BeZnTe visible light-emitting diode with longer lifetime over 1000h"physica status solidi (a). Vol.192,No.1. 201-205 (2002)
[Publications] Yasutomo Ochiai: "ZnCdTe/ZnTe light emitting diodes with MgSeTe/ZnTe super-lattice layers grown on ZnTe substrates by molecular beam epitaxy"physica status solidi (a). Vol.192,No.1. 206-211 (2002)
[Publications] Katsumi Kishino: "II-VI semiconductors on InP for green-yellow emitters (Invited)"Journal of Selected Topics in Quantum Electronics. Vol.8,No.4. 773-786 (2002)
[Publications] Masao Yonemaru: "Improved responsivity of AlGaN-based resonant cavity-enhanced UV-photodetectors grown on sapphire by RF-MBE"physica status solidi (a). Vol.192,No.2. 292-295 (2002)
[Publications] Song-Bek Che: "Yellow-green ZnCdSe/BeZnTe II-VT laser diodes grown on InP substrates"Applied Physics Letters. Vol.81,No.6. 972-974 (2002)
[Publications] Katsumi Kishino: "λ〜1.1-1.6μm intersubband transition in (GaN)_m/(AlN)_n superlattices grown by rf-plasma molecular beam epitaxy"Applied Physics Letters. Vol.81,No.7. 1234-1236 (2002)
[Publications] Akihiko Kikuchi: "AlN/GaN double resonant tunneling diodes grown by rf-plasma assisted molecular beam epitaxy"Applied Physics Letters. Vol.81,No.9. 1729-1731 (2002)
[Publications] Kazuhide Kusakabe: "Overgrowth of GaN layer on GaN nano-columns by RF-molecular beam epitaxy"Journal of Crystal Growth. Vol.237,No.2. 988-992 (2002)

2002 Fiscal Year Annual Research Report

広い可視光領域をカバーする光デバイス用材料の開拓

Principal Investigator

岸野 克巳 上智大学, 理工学部, 教授 (90134824)

Research Products

[Publications] Song-Bek Che: "Growth and characterization of ZnCdSe/BeZnTe II-VI compound type-II superlattices on InP substrates and their application for visible light emitting devices"Japanese Journal of Applied Physics. Vol.40,No.12. 6747-6752 (2002)

[Publications] Song-Bek Che: "Novel ZnCdSe/BeZnTe type-II superlattice structure grown on InP substrates by MBE"Journal of Korean Physical Society. Vol.39. S18-S22 (2002)

[Publications] Kazuhiro Fukada: "Reduction of defect density of ZnCdSe on InP substrates by introducing BeZnTe buffer layers"physica status solidi (b). Vol.229,No.1. 107-110 (2002)

[Publications] Ichirou Nomura: "Refractive index measurements of BeZnTe and related superlattices on InP and application for waveguide analysis of MgZnCdSe/BeZnTe visible lasers"physica status solidi (b). Vol.229,No.2. 987-990 (2002)

[Publications] Song-Bek Che: "Visible light emitting diode with ZnCdSe/BeZnTe superlattices as an active layer and MgSe/BeZnTe superlattices as a p-cladding layer"physica status solidi (b). Vol.229,No.2. 1001-1004 (2002)

[Publications] Katsumi Kishino: "ZnCdTe/ZnTe light emitting diodes with CdSe n-type contact layers grown on_ZnTe_substrates by molecular beam epitaxy"physica status solidi (b). Vol.229,No.2. 991-994 (2002)

[Publications] Katsumi Kishino: "Improved molecular beam epitaxy for fabricating AlGaN/GaN heterojunction devices"physica status solidi (a). Vol.190,No.1. 23-31 (2002)

[Publications] Katsumi Kishino: "Intersubband absorption at λ〜1.2-1.6μm in GaN/AlN multiple quantum wells grown by rf-plasma molecular beam epitaxy"physica status solidi (a). Vol.192,No.1. 124-128 (2002)

[Publications] Song-Bek Che: "MgZnCdSe/BeZnTe visible light-emitting diode with longer lifetime over 1000h"physica status solidi (a). Vol.192,No.1. 201-205 (2002)

[Publications] Yasutomo Ochiai: "ZnCdTe/ZnTe light emitting diodes with MgSeTe/ZnTe super-lattice layers grown on ZnTe substrates by molecular beam epitaxy"physica status solidi (a). Vol.192,No.1. 206-211 (2002)

[Publications] Katsumi Kishino: "II-VI semiconductors on InP for green-yellow emitters (Invited)"Journal of Selected Topics in Quantum Electronics. Vol.8,No.4. 773-786 (2002)

[Publications] Masao Yonemaru: "Improved responsivity of AlGaN-based resonant cavity-enhanced UV-photodetectors grown on sapphire by RF-MBE"physica status solidi (a). Vol.192,No.2. 292-295 (2002)

[Publications] Song-Bek Che: "Yellow-green ZnCdSe/BeZnTe II-VT laser diodes grown on InP substrates"Applied Physics Letters. Vol.81,No.6. 972-974 (2002)

[Publications] Katsumi Kishino: "λ〜1.1-1.6μm intersubband transition in (GaN)_m/(AlN)_n superlattices grown by rf-plasma molecular beam epitaxy"Applied Physics Letters. Vol.81,No.7. 1234-1236 (2002)

[Publications] Akihiko Kikuchi: "AlN/GaN double resonant tunneling diodes grown by rf-plasma assisted molecular beam epitaxy"Applied Physics Letters. Vol.81,No.9. 1729-1731 (2002)

[Publications] Kazuhide Kusakabe: "Overgrowth of GaN layer on GaN nano-columns by RF-molecular beam epitaxy"Journal of Crystal Growth. Vol.237,No.2. 988-992 (2002)

岸野克巳上智大学, 理工学部, 教授 (90134824)