2004 Fiscal Year Final Research Report Summary
Femtosecond pulse radiolysis study on reaction mechanism induced in nanostructures
| Project/Area Number |
14208060
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (A)
|
| Allocation Type | Single-year Grants |
|---|
| Section | 一般 |
|---|
| Research Field |
Nuclear engineering
|
|---|
| Research Institution | Osaka University |
|---|
Principal Investigator |
TAGAWA Seiichi Osaka University, The Institute of Scientific and Industrial Research, Professor, 産業科学研究所, 教授 (80011203)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
YOSHIDA Yoichi Osaka University, The Institute of Scientific and Industrial Research, Professor, 産業科学研究所, 教授 (50210729)
KOZAWA Takahiro Osaka University, The Institute of Scientific and Industrial Research, Associate Professor, 産業科学研究所, 助教授 (20251374)
SEKI Shuhei Osaka University, The Institute of Scientific and Industrial Research, Associate Professor, 産業科学研究所, 助教授 (30273709)
SAEKI Akinori Osaka University, The Institute of Scientific and Industrial Research, Research Associate, 産業科学研究所, 助手 (10362625)
|
|---|
| Project Period (FY) |
2002 – 2004
|
| Keywords | femtosecond pulse radiolysis / nanostructure / nanotechnology / spatial distribution / diffusion / reaction mechanism / spatiotemporal dynamics / resist |
|---|
| Research Abstract |
The advance of microelectronics has highly depended on the technological innovation of lithography. Light sources such as a KrF excimer laser and a ArF excimer laser have been used as an exposure tool for mass production. However the resolving power of light sources will fall short of the market demand in the near future. Radiation sources such as electron beam(EB) and extreme ultraviolet(EUV) are expected to replace the light sources. Furthermore, nanotechnology has recently attracted enthusiastic attention in many fields such as bioscience and information technology. The EB and X-ray lithography is also one of promising candidates for the fabrication of nanostructure. The development and improvement of each element such as a resist, optics and a mask for EB and EUV lithography have been pursued. Especially, the resist is a key technology for the mass production and has been investigated energetically. In EB and X-ray lithography, the energy is mostly deposited on resist materials via
… More
ionization process. The ionization means that a molecule is spatially separated into a radical cation and an electron. The average distance of a radical cation and a thermalized electron is approximately several nanometers, which depends on materials. In the resist materials such as chemically amplified resists in which both the radical cation of base resin and the electron play an important role to form a latent image, the spatial separation of a radical cation and an electron have to be well considered.
Using femtosecond laser and femtosecon electron beam, we investigated ultrafast phenomena induced in nanostructure. The initial distribution of low energy electrons in nanofabrication materials was made clear. The spatiotemporal dynamics play an important role in the pattern formation processes in current nanofabrication materials, "chemically amplified resists". Based on experimental results, we carried out the modeling and simulation of reactions induced in nanostructure. The reaction mechanism of nanopattern formation was elucidated. Less
|
