2003 Fiscal Year Final Research Report Summary
Study of Cluster Ion Analysis method?
Project/Area Number |
14550025
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Research Category |
Grant-in-Aid for Scientific Research (C)
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Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
表面界面物性
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Research Institution | KYOTO UNIVERSITY |
Principal Investigator |
MATSUO Jiro KYOTO UNIVERSITY, Quantum Science and Engineering Center, Assistant Professor, 工学研究科・附属量子理工学研究実験センター, 助教授 (40263123)
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Co-Investigator(Kenkyū-buntansha) |
TAKAOKA Gikan KYOTO UNIVERSITY, Faculty of Engineering, Professor, 工学研究科・附属イオン工学実験施設, 教授 (90135525)
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Project Period (FY) |
2002 – 2003
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Keywords | ion / cluster / secondary ion / SIMS / simulation / many-body collision / oxygen / sputtering |
Research Abstract |
Secondary Ion Mass Spectrometry (SIMS) with Gas Cluster Ion Beams (GCIB) was investigated with experiments and molecular dynamics (MD) simulations. A new cluster SIMS system with high-intensity cluster ion source has been developed. Ar cluster ion beam with the average size of 2000 was utilized as a primary ion beam. The beam diameter is less than 1mm at the target position, and a current density of 10uA/cm^2 is obtained. The etch rate of Si with this current density is more than 20nm/min., which is far beyond the etch rate in recent low energy SIMS system. The secondary ion intensity linearly increases with the acceleration voltage. a threshold voltage of a few keV for secondary ion emission was found. These results are consistent with previous sputtering exveriments. Due to the dense energy deposition in a local area with cluster ion impacts, the ion-mixing effect is heavier than the same energy per atom of Ar monomer ion. The calculated sputtering yields with Ar_<10>^+ with a kinetic energy of 100eV/atom is about 1atoms/ion, which is one order of magnitude higher than those with Ar^+ at the same energy/atom. This indicates that cluster ion beam has a great capability to be utilized as a primary ion beam in high depth resolution SIMS with short analysis time.
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Research Products
(37 results)
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[Publications] H.Kageyama, T.Asanuma, T.Takeuchi, K.Handa, K.Omoto, A.Nakai, T.Seki, J.Matsuo, Y.Shimizugawa, N.Toyoda, I.Yamada: "XAFS study on high quality optical films formed with cluster ion assist deposition"SPring-8 User Experimental Report 2002A(Oct.2002).
Description
「研究成果報告書概要(欧文)」より
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