2004 Fiscal Year Final Research Report Summary
Simultaneous detection of positive and negative scanning ion images using a focused ion beam
| Project/Area Number |
14550028
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
表面界面物性
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| Research Institution | Takushoku University |
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Principal Investigator |
SEKI Setsuko Takushoku University, Faculty of Engineering, Professor, 工学部, 教授 (40196944)
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| Project Period (FY) |
2002 – 2004
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| Keywords | secondary ion image / liquid metal ion source / SIMS / beveling method / focused ion beam / ion implantation / イオン注入 |
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| Research Abstract |
An instrument to simultaneously obtain the positive and negative ion images by scanning a focused ion beam (FIB) of a liquid-metal-ion source (LMIS) has been developed. It consists of primary ion irradiation column, sample chamber, extracting and detecting system for secondary ions, and data processing system. The structural features of the instrument are as follows: scanning ion beam axis is perpendicular to the sample which is held in a horizontal plane; the positive and negative secondary ions are extracted to the separate directions by extractors which face each other in a symmetrical position to the scanning beam axis. By this arrangement the electric field formed by the voltages applied to the extractors hardly affects the deflection of the primary ion beam. The secondary ions are detected as follows: 1) an LMIS beam scans on the sample surface; 2) the sputtered positive and negative secondary ions are separately and simultaneously extracted by the electric fields; 3) the secondary ions are converted to electrons by bombarding the converters made of aluminum; 4) the electrons are accelerated toward scintillators to generate photons; 5) the photon signals are detected and amplified by photomultipliers; 6) two channels of output signals synchronized with the scanning signal are processed by computer. Thus the positive and negative ion images of the same point are displayed on a monitor. The author confirmed that each part of the instrument normally works, and that the positive and negative ion images of a mesh sample are properly observed.
Moreover, to further advance the SIMS analyzing technique the measuring method was also developed. In this study, the secondary ion image analysis by Ga-FIB on a beveled layered sample was investigated. This technique was especially useful for a rough surface sample as an alternative to SIMS depth profiling.
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Research Products
(8 results)
