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2004 Fiscal Year Final Research Report Summary

Injection and control of spin-polarized electrons into highly uniform semiconductor quantum dots

Research Project

Project/Area Number 14550294
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionThe University of Electro-Communications

Principal Investigator

YAMAGUCHI Koichi  The University of Electro-Communications, Faculty of Electro-Communications, Associate Professor, 電気通信学部, 助教授 (40191225)

Project Period (FY) 2002 – 2004
Keywordsquantum dot / molecular beam epitaxy / InAs / GaAs / GaSb / self formation / spin / nanohole
Research Abstract

1.Uniform self-formation of InAs/GaAs and GaSb/GaAs quantum dots
A self size-limiting effect of InAs quantum dots was observed and provided the highly uniform formation of the InAs quantum dots, which revealed a narrow photoluminescence linewidth of 17 meV. The uniform formation of the GaSb quantum dots was attempted by using the appropriate growth conditions enhancing the surface migration. As the result, a narrow photoluminescence linewidth of 49 meV was obtained successfully.
2.Stacking growth of InAs quantum dots and self-formation of GaAs nanoholes
The stacking growth of the uniform InAs quantum dots was attempted, and, influences of the strain field on the stacking growth were studied. From these results, the stacked quantum-dot structure was controlled precisely, and, the uniform stacking growth technique was developed. The uniformly stacked InAs quantum dots revealed a narrow photoluminescence of 17 meV. Next, the GaAs nano-holes were spontaneously formed just above the embedded InAs quantum dots by the annealing after the GaAs capping growth. The quantum-dot diodes with the nano-contacting InAs dots through the GaAs nano-holes were proposed and were fabricated. The local tunnel injection of electrons was confirmed successfully.
3.Evaluations of spin physics in semiconductor quantum dots
The high dot density of the InAs quantum dots was achieved by using a new method introducing the GaSb/GaAs buffer layers. The spin polarization of the high-density quantum dots was evaluated by the polarized photoluminescence measurement and decreased with increasing the dot density. Next, the spin-polarized scanning tunneling microscopy using the optically pumped GaAs tips and the magnetic tips was attempted. In case of the Ni thin-film sample, spin-dependent tunneling current was detected. These techniques have an attractive potential for studying the spin physics in the semiconductor quantum dots.

  • Research Products

    (43 results)

All 2005 2004 2003 2002

All Journal Article (40 results) Book (1 results) Patent(Industrial Property Rights) (2 results)

  • [Journal Article] Control of Light Emitting Wavelength from Uniform InAs Quantum Dots by Annealing2005

    • Author(s)
      Y.Kobayashi et al.
    • Journal Title

      Applied Surface Science Vol.244

      Pages: 88-91

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Self-Assembled InAs Quantum Dots on GaSb/GaAs(001) layers by Molecular Beam Epitaxy2005

    • Author(s)
      K.yamaguchi et al.
    • Journal Title

      Journal of Crystal Growth Vol.275

      Pages: E2269-e2273

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] 高均一量子ドットの自己形成2005

    • Author(s)
      山口 浩一
    • Journal Title

      応用物理学会誌 Vol.74 No.3

      Pages: 307-312

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Control of self-formed GaAs nanoholes combined with embedded InAs quantum dots2005

    • Author(s)
      T.Sato et al.
    • Journal Title

      Japanese Journal of Applied Physics Vol.44,No.4B

      Pages: 2672-2675

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Analysis of Sb-As surface exchange reaction in molecular beam epitaxy of GaSb/GaAs quantum wells2005

    • Author(s)
      T.Nakai et al.
    • Journal Title

      Japanese Journal of Applied Physics Vol.44 No.6A

      Pages: 3803-3807

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Self-Assembled InAs Quantum Dots on GaSb/GaAs(001) layers by Molecular Beam Epitaxy2005

    • Author(s)
      K.Yamaguchi, T.Kanto
    • Journal Title

      J.Crystal Growth Vol.275

      Pages: 2269-2273

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Control of Light Emitting Wavelength from Uniform InAs Quantum Dots by Annealing2005

    • Author(s)
      Y.Kobayashi, K.Yamaguchi
    • Journal Title

      Appl.Surf.Sci. Vol.244

      Pages: 88-91

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Control of Self-Formed GaAs Nanoholes Combined with Embedded InAs Quantum Dots2005

    • Author(s)
      T.Satoh, K.Yamaguchi
    • Journal Title

      Jpn.J.Appl.Phys. Vol.44, No.4B

      Pages: 2672-2675

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Analysis of Sb-As Surface Exchange Reaction in Molecular Beam Epitaxy of GaSb/GaAs Quantum Wells2005

    • Author(s)
      T.Nakai, K.Yamaguchi
    • Journal Title

      Jpn.J.Appl.Phys. Vol.44, No.6A

      Pages: 3803-3807

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Controlled Stacking Growth of Uniform InAs Quantum Dots by Molecular Beam Epitaxy2004

    • Author(s)
      Y.Suzuki et al.
    • Journal Title

      Physica E Vol.21/2-4

      Pages: 555-559

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Control of GaSb/GaAs Nanostructures by Molecular Beam Epitaxy2004

    • Author(s)
      T.Nakai et al.
    • Journal Title

      Japanese Journal of Applied Physics Vol.43 No.4B

      Pages: 2122-2124

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Spin Relaxation Dynamics in Highly Uniform InAs Quantum Dots2004

    • Author(s)
      A.Takeuchi et al.
    • Journal Title

      Applied Physics Letters Vol.84

      Pages: 3576-3578

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Atomically controlled GaSb-termination of GaAs surface and its properties2004

    • Author(s)
      T.Miura et al.
    • Journal Title

      Applied Surface Science Vol.237

      Pages: 242-245

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Self-Formation of Uniform InAs Quantum Dots and Quantum-Dot Chains2004

    • Author(s)
      K.Yamaguchi, T.Kaizu, T.Kanto, Y.Suzuki
    • Journal Title

      Trans.MRS-J Vol.29, No.1

      Pages: 117-121

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Self-Assembled GaAs/GaSb Quantum Dots by MolecularBeam Epitaxy2004

    • Author(s)
      S.Iwasaki, T.Nakai, K.Yamaguchi
    • Journal Title

      Trans.MRS-J Vol.29, No.1

      Pages: 127-129

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Controlled Stacking Growth of Uniform InAs Quantum Dots by Molecular Beam Epitaxy2004

    • Author(s)
      Y.Suzuki, T.Kaizu, K.Yamaguchi
    • Journal Title

      Physica E Vol.21/2-4

      Pages: 555-559

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Control of GaSb/GaAs Nanostructures by Molecular Beam Epitaxy2004

    • Author(s)
      T.Nakai, S.Iwasaki, K.Yamaguchi
    • Journal Title

      Jpn.J.Appl.Phys. Vol.43, No.4B

      Pages: 2122-2124

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Spin Relaxation Dynamics in Highly Uniform InAs Quantum Dots2004

    • Author(s)
      A.Takeuchi, R.Ohtsubo, K.Yamaguchi, M.Murayama, T.Kitamura, et al.
    • Journal Title

      Appl.Phys.Lett. Vol.84

      Pages: 3576-3578

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Atomically controlled GaSb-termination of GaAs surface and its properties2004

    • Author(s)
      T.Miura, T.Nakai, K.Yamaguchi
    • Journal Title

      Appl.Surf.Sci. Vol.237

      Pages: 242-245

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] High quality InAs quantum dots covered by InGaAs/GaAs hetero-capping layer2003

    • Author(s)
      R.Ohtsubo et al.
    • Journal Title

      Physics Status Solidi (C) Vol.0,No.3

      Pages: 939-943

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Size ordering effects of InAs quantum dots during a GaAs capping growth2003

    • Author(s)
      Y.Saito et al.
    • Journal Title

      Int.Phys.Conf.Ser. No.170,Chap.7

      Pages: 531-535

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Uniform Formation of Two-dimensional and Three-dimensional InAs Islands on GaAs by Molecular Beam Epitaxy2003

    • Author(s)
      T.Kaizu et al.
    • Journal Title

      Japanese Journal of Applied Physics Vol.42,No.4A

      Pages: 1705-1708

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Shape Transition of InAs from 2-Dimensional Islands and 3-Dimensional Dots by Annealing2003

    • Author(s)
      S.Iwasaki et al.
    • Journal Title

      Applied Surface Science Vol.216

      Pages: 407-412

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Facet Formation of Uniform InAs Quantum Dots by Molecular Beam Epitaxy2003

    • Author(s)
      T.Kaizu et al.
    • Journal Title

      Japanese Journal of Applied Physics Vol.42,No.6B

      Pages: 4166-4168

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Direct Observation of Phonon Relaxation Bottleneck in InAs Quantum Dots of High-Uniformity2003

    • Author(s)
      T.Kitamura et al.
    • Journal Title

      Physica Status Solidi (c) Vol.0,No.4

      Pages: 1165-1168

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Observation of Spin Pauli Blocking in InAs High-Uniform Quantum Dots2003

    • Author(s)
      M.Murayama et al.
    • Journal Title

      Physica Status Solidi (c) Vol.0,No.4

      Pages: 1145-1148

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] High Quality InAs Quantum Dots Covered by InGaAs/GaAs Hetero-Capping Layer2003

    • Author(s)
      R.Ohtsubo, K.Yamaguchi
    • Journal Title

      Phys.Status Sol.(c) Vol.0, No.3

      Pages: 939-943

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Uniform Formation of Two-dimensional and Three-dimensional InAs Islands on GaAs by Molecular Beam Epitaxy2003

    • Author(s)
      T.Kaizu, K.Yamaguchi
    • Journal Title

      Jpn.J.Appl.Phys. No.4A

      Pages: 1705-1708

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Shape Transition of InAs from 2-Dimensional Islands and 3-Dimensional Dots by Annealing2003

    • Author(s)
      S.Iwasaki, K.Yamaguchi
    • Journal Title

      Appl.Surf.Sci. Vol.216

      Pages: 407-412

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Facet Formation of Uniform InAs Quantum Dots by Molecular Beam Epitaxy2003

    • Author(s)
      T.Kaizu, K.Yamaguchi
    • Journal Title

      Jpn.J.Appl.Phys. Vol.42, No.6B

      Pages: 4166-4168

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Direct Observation of Phonon Relaxation Bottleneck in InAs Quantum Dots of High-Uniformity2003

    • Author(s)
      T.Kitamura, R.Ohtsubo, M.Murayama, T.Kuroda, K.Yamaguchi et al.
    • Journal Title

      Phys.Status Sol.(c) Vol.0, No.4

      Pages: 1165-1168

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Observation of Spin Pauli Blocking in InAs High-Uniform Quantum Dots2003

    • Author(s)
      M.Murayama, R.Ohtsubo, T.Kitamura, T.Kuroda, K.Yamaguchi et al.
    • Journal Title

      Phys.Status Sol.(c) Vol.0, No.4

      Pages: 1145-1148

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Size-shrinkage effects on InAs quantum dots during the growth of GaAs capping layer2002

    • Author(s)
      K.Yamaguchi et al.
    • Journal Title

      Applied Surface Science Vol.190

      Pages: 212-217

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Uniform formation process of self-organized InAs quantum dots2002

    • Author(s)
      K.Yamaguchi et al.
    • Journal Title

      Journal Crystal Growth Vol.237/239

      Pages: 1301-1306

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Spin-polarized scanning tunneling microscopy using optically pumped GaAs tips2002

    • Author(s)
      T.Miura et al.
    • Journal Title

      Japanese Journal Applied Physics Vol.41,No.6B

      Pages: 4382-4384

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] One-dimensional quantum-dot chains of InAs grown on strain-controlled GaAs/InGaAs buffer layers by molecular beam epitaxy2002

    • Author(s)
      K.Yamaguchi et al.
    • Journal Title

      Japanese Journal Applied Physics Vol.41,No.9AB

      Pages: L996-L998

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Size-Shrinkage Effects of InAs Quantum Dots During the Growth of GaAs Capping Layer2002

    • Author(s)
      K.Yamaguchi, Y.Saito, R.Otsubo
    • Journal Title

      Appl.Surf.Sci. Vol.190

      Pages: 212-217

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Uniform Formation Process of Self-Organized InAs Quantum Dots2002

    • Author(s)
      K.Yamaguchi, T.Kaizu, K.Yujobo, Y.Saito
    • Journal Title

      J.Cryst.Growth Vol.237-239

      Pages: 1301-1306

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Spin-Polarized Scanning Tunneling Microscopy Using Optically Pumped GaAs Tips2002

    • Author(s)
      T.Miura, K.Yamaguchi
    • Journal Title

      Jpn.J.Appl.Phys. Vol.41, No.6B

      Pages: 4382-4384

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] One-Dimensional Quantum-Dot Chains of InAs Grown on Strain-Controlled GaAs/InGaAs Buffer Layer by Molecular Beam Epitaxy2002

    • Author(s)
      K.Yamaguchi, K.Kawaguchi, T.Kanto
    • Journal Title

      Jpn.J.Appl.Phys. Vol.41, No.9AB

      Pages: L996-L998

    • Description
      「研究成果報告書概要(欧文)」より
  • [Book] ナノマテリアルハンドブック(国武豊喜監修)2005

    • Author(s)
      山口 浩一(分担執筆)
    • Total Pages
      807
    • Publisher
      エヌ・ティー・エス
    • Description
      「研究成果報告書概要(和文)」より
  • [Patent(Industrial Property Rights)] 量子半導体装置およびその製造方法2004

    • Inventor(s)
      山口 浩一
    • Industrial Property Rights Holder
      電気通信大学
    • Industrial Property Number
      特願2004-244210
    • Filing Date
      2004-08-24
    • Description
      「研究成果報告書概要(和文)」より
  • [Patent(Industrial Property Rights)] 量子ドットの形成方法2004

    • Inventor(s)
      山口 浩一
    • Industrial Property Rights Holder
      電気通信大学
    • Industrial Property Number
      特願2004-262638
    • Filing Date
      2004-09-09
    • Description
      「研究成果報告書概要(和文)」より

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Published: 2006-07-11  

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