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2005 Fiscal Year Final Research Report Summary

Ultra-high Speed Global Interconnects for Inter-chip Communication

Research Project

Project/Area Number 15206041
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section一般
Research Field Electron device/Electronic equipment
Research InstitutionHIROSHIMA UNIVERSITY

Principal Investigator

KIKKAWA Takamaro  Hiroshima University, Research Center for Nanodevices and Systems, Professor, ナノデバイス・システム研究センター, 教授 (60304458)

Co-Investigator(Kenkyū-buntansha) YOKOYAMA Shin  HIROSHIMA UNIVERSITY, Research Center for Nanodevices and Systems, Professor, ナノデバイス・システム研究センター, 教授 (80144880)
MIYAZAKI Seiichi  HIROSHIMA UNIVERSITY, Graduate School of Advanced Sciences of Matter, Professor, 大学院先端物質科学研究科, 教授 (70190759)
Project Period (FY) 2003 – 2005
KeywordsSilicon / Antenna / Wireless / Interconnect / Radio communication / Interconnection / Transceiver / ガウシアンパルス
Research Abstract

Ultra-wideband characteristics of Sierpinski carpet fractal antennas fabricated on silicon substrates with the resistivities of 2290 Ω-cm, 79.6 Ω-cm and 10 Ω-cm were investigated. The return losses lower than-10 dB and high transmission gains of approximately-14 dB were obtained for the antennas with 10 mm distance on the Si substrate with the resistivity of 2290 Ω-cm in the frequency range from 18 to 26.5 GHz. Gaussian monocycle pulses with 70 ps pulse width were transmitted in the Si substrates successfully and the corresponding voltage gains were-23 dB,-26 dB and-39 dB for the Si resistivities of 2290 Ω-cm, 79.6 Ω-cm and 10 Ω-cm, respectively.
Ultra-wideband impulse based radio system uses Gaussian monocycle pulse as a transmitted signal at transmitting end and as a template signal at receiving end. In this paper we present a new fully integrated differential Gaussian monocycle pulse generator in 0.18 pm CMOS technology. Here the differential Gaussian monocycle pulse is generated from triangular shaped pulse by a single differentiator circuit and it is then converted into differential form by using a single input to dual output amplifier. The developed circuit occupies a small area of 0.06 mm^2 and consumes a total power of 44 mW from 1.8 V. The transmission of the generated differential Gaussian monocycle pulse at a rate of 1.4 Gbps through integrated dipole antenna in the same Si-substrate for intrachip communication in future ULSI is verified by simulation and results are presented here.

  • Research Products

    (16 results)

All 2005 2004 2003

All Journal Article (14 results) Patent(Industrial Property Rights) (2 results)

  • [Journal Article] Ultrawideband characteristics of fractal dipole antennas integrated on Si for ULSI wireless interconnects2005

    • Author(s)
      T.Kikkawa, K.Kimoto, S.Watanabe
    • Journal Title

      Electron Device Letters, IEEE Volume26,Issue10

      Pages: 767-769

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] transmission Characteristics of Gaussian Monocycle Pulses for Inter-Chip wireless Interconnections Using Integrated antennas2005

    • Author(s)
      Kentaro Kimoto, Takamaro Kikkawa
    • Journal Title

      Japanese Journal of Applied Physics Vol.44,No.4B

      Pages: 2756-2760

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Efficient Design of Integrated Antennas on Si for On-Chip wireless Interconnects in Multi-Layer Metal Process2005

    • Author(s)
      A.B.M.H.Rezwan Khan, T.Kikkawa
    • Journal Title

      Japanese Journal of Applied Phyusics Vol.44,No.4B

      Pages: 2761-2765

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] A CMOS Monocycle Pulse Generation Circuit in a Ultra-wideband Transmitter for Intra/Inter Chip wireless Interconnection2005

    • Author(s)
      Pran Kanai saha, Nobuo Sasaki, Takamaro Kikkawa
    • Journal Title

      Japanese Journal of Applied Physics vol.44,No.4B

      Pages: 2104-2108

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Ultra wideband characteristics of fractal dipole antennas integrated on Si for ULSI wireless interconnects2005

    • Author(s)
      T.Kikkawa, K.kimoto, S.Watanabe
    • Journal Title

      Electron Device Letters, IEEE Volume 26, Issue 10

      Pages: age(s):767-769

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Transmission Characteristics of Gaussian Monocycle Pulses for Inter-Chip Wireless Interconnections Using Integrated Antennas2005

    • Author(s)
      Kentaro Kimoto, Takamaro Kikkawa
    • Journal Title

      Japanese Journal of Applied Physics Vol. 44, No. 4B

      Pages: 2756-2760

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Efficient Design of Integrated Antennas on Si for On-Chip Wireless Interconnects in Multi-Layer Meta Process2005

    • Author(s)
      A.B.M.H.Rashid, Nasrin Sultana, M.Rezwan Khan, T.Kikkawa
    • Journal Title

      Japanese Journal of Applied Physics Vol. 44, No. 4B

      Pages: 2761-2765

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] A CMOS Monocycle Pulse Generation Circuit in Ultra-Wideband Transmitter for Intra/Inter Chip Wireless Interconnection2005

    • Author(s)
      Pran Kanai Saha, Nobuo Sasaki, Takamaro Kikkawa
    • Journal Title

      Japanese Journal of Applied Physics Vol. 44, No. 4B

      Pages: 2104-2108

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Effect of High Resistivity Si substrate on Antenna Transmission Gain for On-Chip wireless Interconnects2004

    • Author(s)
      S.Watanabe, A.B.M.H.Rashid, T.Kikkawa
    • Journal Title

      Japanese Journal of Applied Physics vol.43,No.4B

      Pages: 2297-2301

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Characteristics of Si Integrated Antenna for Inter-Chip Wireless Interconnection2004

    • Author(s)
      A.B.M.H.Rasihd, S.Watanabe
    • Journal Title

      Japanese Journal of Appilied Physics Vol.43,No.4B

      Pages: 2283-2287

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Effect o High Resistivity Si substrate on Antenna Transmission Gain for On-Chip Wireless Interconnects2004

    • Author(s)
      S.Watanabe, A.B.M.H.Rashid, T.Kikkawa
    • Journal Title

      Japanese Journal of Applied Physics Vol. 43, No. 4B

      Pages: 2297-2301

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Characteristics of Si Integrated Antenna for Inter-Chip Wireless Interconnection,2004

    • Author(s)
      A.B.M.H.Rashid, S.Watanabe, T.Kikkawa
    • Journal Title

      Japanese Journal of Applied Physics Vol. 43, No. 4B

      Pages: 2283-22287

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] characteristics of Integrated Antenna on Si for On-Chip Wireless Interconnect2003

    • Author(s)
      A.B.M.H.Rashid, S.Watanabe, T.Kikakwa
    • Journal Title

      Japanaese Journal of applied Physics vol.42

      Pages: 1-6

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Characteristics of Integrated Antenna on Si for On-Chip Wireless Interconnect2003

    • Author(s)
      A.B.M.H.Rashid, S.Watanabe, T.Kikkawa
    • Journal Title

      Japanese Journal of Applied Physics Vol. 42, No. 4B

      Pages: 2204-2209

    • Description
      「研究成果報告書概要(欧文)」より
  • [Patent(Industrial Property Rights)] 半導体装置2005

    • Inventor(s)
      吉川公鷹他3名
    • Industrial Property Rights Holder
      広島大学
    • Industrial Property Number
      特願2005-352935
    • Filing Date
      2005-12-07
    • Description
      「研究成果報告書概要(和文)」より
  • [Patent(Industrial Property Rights)] 半導体装置2003

    • Inventor(s)
      吉川公麿他9名
    • Industrial Property Rights Holder
      科学技術振興機構
    • Industrial Property Number
      特願2003-117826
    • Filing Date
      2003-04-23
    • Description
      「研究成果報告書概要(和文)」より

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Published: 2008-05-27  

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