2005 Fiscal Year Final Research Report Summary
Development of Integrated Analysis System for manufacturing high quality devices
| Project/Area Number |
15360058
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (B)
|
| Allocation Type | Single-year Grants |
|---|
| Section | 一般 |
|---|
| Research Field |
Materials/Mechanics of materials
|
|---|
| Research Institution | Kyoto University (2004-2005)
Kyushu University (2003) |
|---|
Principal Investigator |
MIYAZAKI Noriyuki Kyoto University, Graduate School of Engineering, Professor, 工学研究科, 教授 (10166150)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
IKEDA Toru Kyoto University, Graduate School of Engineering, Associate Professor, 工学研究科, 助教授 (40243894)
|
|---|
| Project Period (FY) |
2003 – 2005
|
| Keywords | Finite Element Method / Single Crystal / Dislocation Density / Crystal Anisotropy / Single Crystal Growth / Ingot Annealing / Manufacturing Devices / Haasen-Alexander-Sumino Model |
|---|
| Research Abstract |
The present research was performed to develop an integrated analysis system for manufacturing high quality devices, which comprises computer codes for the dislocation density analysis during single crystal growth process, for the dislocation density analysis during ingot annealing process, and for the dislocation density analysis during manufacturing devices on wafers. In the integrated analysis system for manufacturing high quality devices, these subsystems are sequentially connected to deal with the whole process of manufacturing devices. The following are results of the present research.
(1)We developed a dislocation density analysis code, in which crystal anisotropy is neglected or approximately considered.
(2)We proposed a modified Haasen-Alexander-Sumino (HAS) model as a constitutive equation to take account of the annihilation of dislocations. In this model, the dislocation density has a positive value or a negative value in accordance with the direction of the resolved shear stre
… More
ss, and the model is able to represent not only the dislocation multiplication but also the annihilation of dislocations. We also proposed the constitutive equation by considering the kinds of dislocations, i.e. screw dislocation, edge dislocation and mixed dislocation. We incorporated these constitutive equations into the three-dimensional finite element computer code for ingot annealing process, in which crystal anisotropy is exactly taken into account. We applied this computer code to the dislocation density analyses of compound semiconductor crystals such as GaAs and InP during ingot annealing process.
(3)We utilized the modified HAS model to take account of the annihilation of dislocations in the dislocation density analysis code for GaAs thin film deposition on the Si substrate. We applied this computer code to the rapid thermal annealing (RPA) process, in which the annihilation of dislocations must be taken into account. The computer code successfully provides the decrease of dislocation density by the RPA process, which agrees with the experimental observation.
(4)We successfully connected above three subsystems. Less
|
