2004 Fiscal Year Final Research Report Summary
High Voltage SiC Power Transistor having High Quality Gate Insulator Formed by Microwave Excited Plasma
| Project/Area Number |
15360156
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Tohoku University |
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Principal Investigator |
TERAMOTO Akinobu Tohoku University, New Industry Creation Hatchery Center, Associate Professor, 未来科学技術共同研究センター, 助教授 (80359554)
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| Co-Investigator(Kenkyū-buntansha) |
MORIMOTO Akihiro Tohoku University, New Industry Creation Hatchery Center, Assistant Professor, 未来科学技術共同研究センター, 助手 (10359557)
OHMI Tadahiro Tohoku University, New Industry Creation Hatchery Center, Professor, 未来科学技術共同研究センター, 教授 (20016463)
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| Project Period (FY) |
2003 – 2004
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| Keywords | microwave excited plasma / SiC / insulator film / MOS structure / carbon remaining / low temperature process / epitaxial groth |
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| Research Abstract |
High quality gate oxides are realized in the process temperature less than 1000[℃] by removal of carbon atoms from SiO_2 films formed by microwave excited high-density plasma. The microwave excited high-density plasma can generate the O^* radical, as a result, it can form the high quality SiO_2 films which have low fixed charge density and low int ire trap density on every Si surface such as (100), (110), (111), and polycrystalline Si at low temperature (<500[℃]). However, only O^* oxidation at 400[℃] cannot form the high quality oxides, which contain many carbon atoms of 10^<19> [atmos/cm^3] and high fixed charge density of 10^<12>[cm^<-2>]. The carbon content and the fixed charge density can be reduced one order of magnitude by N_2 annealing at 1000[℃]. The high SiO_2 films of desired film thickness can be formed by following CVD SiO_2 deposition using the dual shower plate structure microwave excited high-density plasma system. On the other hand combination of CVD Poly-Si and following O^* oxidation can form the high quality SiO_2 films on SiC surface at 400[℃]. In this method, the interface trap and fixed charge densities in the SiO_2 film can also reduced one order of magnitude compared with SiO_2 films directly oxidized by O^* oxidation on SiC surface. These indicate that the high quality SiO_2 films can be formed on SiC surface at low temperature less than 1000[℃].
SiC films are deposited on Si(100) surface at 400[℃] using by RF-DC coupled sputter system The crystal of SiC(111) are appeared by N_2 annealing at 950[℃] after the deposition This suggests that the SIC crystal can be formed at the process temperature less than 1000[℃].
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