2005 Fiscal Year Final Research Report Summary
Investigation for improved performance of new-type extremely-stable-wavelength light-emitting devices based on rare-earth-doped III-V semiconductors
| Project/Area Number |
15360164
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Osaka University |
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Principal Investigator |
FUJIWARA Yasufumi Osaka University, Graduate School of Engineering, Professor, 大学院・工学研究科, 教授 (10181421)
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| Co-Investigator(Kenkyū-buntansha) |
YOSHIDA Hiroshi Osaka University, The Institute of Scientific and Industrial Research, Professor, 産業科学研究所, 教授 (30133929)
TAKEDA Yoshikazu Nagoya University, Graduate School of Engineering, Professor, 大学院・工学研究科, 教授 (20111932)
MIYAMOTO Tomoyuki Tokyo Institute of Technology, Precision and Intelligence Laboratory, Associate Professor, 精密工学研究所, 助教授 (70282861)
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| Project Period (FY) |
2003 – 2005
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| Keywords | rare-earth-doped III-V semiconductors / new semiconductor lasers / atomically-controlled growth / stimulated emission / erbium / doubleheterostructures / control of heterointerface / carrier dynamics |
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| Research Abstract |
Rare-earth (RE) doped semiconductors have gained significant attention as a promising new class of materials that emit light from the RE 4f shell by means of electrical injection, in which the energy of electron-hole pairs is transferred to the RE shell. The intra-4f shell transitions of RE ions give rise to sharp emission lines whose wavelengths are largely independent of both the host materials and temperature. This stability occurs because the filled outer 5s and 5p electron shells screen transitions within the inner 4f electron shell from the interaction with the host. The intra-4f shell transitions from the first excited state (^4I_<13/2>) to the ground state (^4I_<15/2>) of Er^<3+> ions at around 1.5 μm is of special interest because the wavelength matches the minimum loss region of silica fibers used in optical communications.
In this research project, we investigated new-type extremely-stable-wavelength light-emitting devices with Er,O-codoped GaAs (GaAs:Er,O) to get a clue for
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their improved performance. Results obtained experimentally are summarized as follows :
1) Er-related luminescence was observed in GaInP/GaAs:Er,O/GaAs doubleheterostructures by injecting current at room temperature. The EL spectrum was dominated by Er-2O lines, suggesting a successful formation of the Er-2O center and preferential excitation of the center by current injection.
2) The current density dependence of the EL intensity revealed an extremely large excitation cross section of Er ions by current injection, approximately 10^<-15> cm^2. The large excitation cross section was confirmed by time-resolved measurements of the EL intensity. It is by two orders in magnitude larger than that of Er-doped Si LEDs (6 x 10^<-17> cm^2).
3) Carrier dynamics in GaAs:Er,O were investigated in a picosecond time scale by a pump and probe reflection technique. Time-resolved reflectivity exhibited a characteristic dip ; a steep decrease to negative in less than 1 ps and then an increase in more than 100 ps. The reflectivity increase at the initial stage, consisting of two components, depended strongly on Er concentration. The Er-concentration dependence on the components reveals that an initial faster decay is due to the capture of nonequilibrium carriers by a trap induced by Er and O codoping Less
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Research Products
(34 results)
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[Journal Article] Nonequilibrium carrier dynamics studied in Er,O-codoped GaAs by pump-probe reflection technique2005
Author(s)
Y.Fujiwara, K.Nakamura, S.Takemoto, Y.Terai, M.Suzuki, A.Koizumi, Y.Takeda, M.Tonouchi
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Journal Title
Materials Research Society Symposium Proceedings, Rare-Earth Doping for Optoelectronic Applications (edited by T.Gregorkiewicz, Y.Fujiwara, M.Lipson and J.M.Zavada) (Materials Research Society, Pittsburgh) Vol.866
Pages: 79-83
Description
「研究成果報告書概要(欧文)」より
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[Journal Article] AFM observation of OMVPE grown ErP on InP (001), (111)A and (111)B substrates2003
Author(s)
T.Kuno, T.Akane, S.Jinno, T.Hirata, Y.Yang, Y.Isogai, N.Watanabe, Y.Fujiwara, A.Nakamura, Y.Takeda
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Journal Title
Materials Science in Semiconductor Processing 6
Pages: 461-464
Description
「研究成果報告書概要(和文)」より
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[Journal Article] Extremely large Er excitation cross section in Er,O-codoped GaAs light emitting diodes grown by organometallic vapor phase epitaxy2003
Author(s)
Y.Fujiwara, A.Koizumi, K.Inoue, A.Urakami, T.Yoshikane, Y.Takeda
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Journal Title
Materials Research Society Symposium Proceedings, Progress in Semiconductors II--Electronic and Optoelectronic Applications (edited by B.D.Weaver, M.O.Manasreh, C.C.Jagadish and S.Zollner) (Materials Research Society, Pittsburgh) Vol.744
Pages: 149-154
Description
「研究成果報告書概要(欧文)」より
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