2004 Fiscal Year Final Research Report Summary
Study of local arrigments and ferromagnetism of dilute magnetic semiconductors of GaN systems by using XAFS method and XMCD.
| Project/Area Number |
15560007
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Osaka University |
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Principal Investigator |
EMURA Shuichi Osaka University, Institute of Scientific and Industrial Research, Research associate, 産業科学研究所, 助手 (90127192)
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| Co-Investigator(Kenkyū-buntansha) |
ASAHI Hajime Osaka University, Institute of Scientific and Industrial Research, Professor, 産業科学研究所, 教授 (90192947)
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| Project Period (FY) |
2003 – 2004
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| Keywords | Spintronics / Dilute magnetic semiconductors / Nitride semiconductor / Photoluminescence / Rare earthes / Ferromagnetism / XAFS / Structural solid state physica |
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| Research Abstract |
We investigated on the local circumstances and ferromagnetism of GaN doped Cr and Gd elements by using XAFS method and XMCD. We found the local structure around Cr in GaN that the Cr atom is substituted on Ga atom until 4% of the Cr concentration. In deep doping over 4%, Cr atoms construct a CrN structure in GaN. Our GaN : Cr showed two phases of hexagonal and cubic structures from the first nearest neighbor analysis around Cr atoms. GaGdN with 6% concentration of Gd atoms also showed the substitutional arraignment on Gd. We furthermore found a new luminescence in GaGdN at 652nm, which is tentatively assigned to f-f transition of divalent Gd ions.
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