Glide motion and electronic structure of partial dislocations in 4H-SiC under electronic excitation conditions

2017 Fiscal Year Final Research Report

• Project/Area Number: 15H03535
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Nanomaterials engineering
• Research Institution: Tohoku University
• Principal Investigator: Ohno Yutaka 東北大学, 金属材料研究所, 准教授 (80243129)
• Research Collaborator: MAEDA Koji 東京大学, 名誉教授 (10107443)
• Project Period (FY): 2015-04-01 – 2018-03-31
• Keywords: 炭化シリコン / 電子励起 / 転位すべり

Outline of Final Research Achievements

Photo-induced glide of 30degrees-Si partial dislocations in 4H-SiC was induced by the illumination of laser light with a sub-gap energy (2.71 eV and 3.06 eV) in a transmission electron microscope (TEM), and the glide was observed in-situ by TEM under photo-illumination. It was concluded that the glide was enhanced by the photo-ionization of the dislocations with a localized energy level below 0.55 eV in depth. Under the hypothesis that 1) the glide velocity was determined by the drift motion of kinks on the dislocations and 2) the driving force of the glide was related to the energy of the stacking faults bound by the dislocations as well as to the line tension of the dislocations, the activation energy for the kink motion was estimated to be below 0.6 eV.

Free Research Field

ナノ構造物性