2017 Fiscal Year Final Research Report
Preparation of high sensitive magnetic sensor using multiferroic tunnel junctions
| Project/Area Number |
15H03548
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials
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| Research Institution | Tohoku University |
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Principal Investigator |
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| Project Period (FY) |
2015-04-01 – 2018-03-31
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| Keywords | BiFeO3 / マルチフェロイクス / スピントロニクス / 磁気センサ / トンネル接合 / 電気磁気効果 / 室温 |
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| Outline of Final Research Achievements |
Development of electronic devices based on noble ideas is essential to sustainably continue a highly sophisticated society. In this project, we investigated elemental technologies necessary to realize a novel highly sensitive magnetic sensor by using the multiferroics magneto-electric effect. We succeeded to find a new multiferroic (BiFeO3) phase by structural analyses using highly accurate electron beam diffraction. We succeeded in observing the electro-magnetic effect of controlling the magnetization direction by an external electric field at room temperature using a multiferroic thin film, and magneto-electric effect could be explained by the theoretical prediction of the first principle calculation. Finally, in experiments, the spontaneous polarization due to an external magnetic field could be controlled, it was found that low noise of measurement system is important for high sensitivity magnetic sensor.
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| Free Research Field |
マルチフェロイクス
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