2017 Fiscal Year Final Research Report
Large-size clusterization of heavily-doped degenerate CVD diamond layer and its functional device application
Project/Area Number |
15H03557
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Research Category |
Grant-in-Aid for Scientific Research (B)
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Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Crystal engineering
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Research Institution | Osaka University |
Principal Investigator |
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Co-Investigator(Kenkyū-buntansha) |
毎田 修 大阪大学, 工学研究科, 助教 (40346177)
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Project Period (FY) |
2015-04-01 – 2018-03-31
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Keywords | CVDダイヤモンド / マイクロ波プラズマCVD / ワイドギャップ半導体 / 不純物ドーピング / CVD製膜装置 / p型半導体 |
Outline of Final Research Achievements |
In order to further develop researches on CVD diamond having the large functionality, we have studied on (1) a substantial suppression of the abnormal decrease in the carrier mobility with increasing dopant densities and (2) development of a new microwave plasma (MWP) CVD apparatus. The following research results have been attained.(1) By embedding multiple-layered heavily-doped degenerate thin diamond layers which are suitably etched to be isolated each other as innumerable clusters to into lightly-doped CVD diamond, the activation energy of the concerned dopants can be decreased successfully with a suppressed (abnormal) reduction in the macroscopic carrier mobility. In this case, the important factors include both the uniformity of the size and two-dimensional periodicity of the clusters formed.(2) A prototype of the MWPCVD with a tapered reaction chamber that is appropriately designed has been developed. Both high-quality diamond growth and large area growth are expected for it.
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Free Research Field |
電気電子材料
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