Electric-field control of electronic phase change properties in transition-metal oxides

2017 Fiscal Year Final Research Report

• Project/Area Number: 15H03567
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Thin film/Surface and interfacial physical properties
• Research Institution: Tohoku University
• Principal Investigator: Fujiwara Kohei 東北大学, 金属材料研究所, 講師 (50525855)
• Project Period (FY): 2015-04-01 – 2018-03-31
• Keywords: 電気二重層トランジスタ / 電界効果トランジスタ

Outline of Final Research Achievements

Electric-field control of functional properties in transition-metal oxides has been considered as a key technology for development of next-generation electronic devices. Recent studies have shown that, by using electric-double-layer transistors, properties of oxide channels can be largely modulated via field-induced redox reactions as well as electrostatic carrier accumulation induced by the strong electric field. In this project, various rutile-type oxide films have been synthesized by a reactive sputtering technique for use in electric-double-layer transistors. Also, a three-terminal device that employs a solid-state electrolyte as the gate dielectric layer has been constructed.

Free Research Field

酸化物エレクトロニクス