Electron and spin transport properties of Rashba systems on semiconductor surfaces

2017 Fiscal Year Final Research Report

• Project/Area Number: 15H03675
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Condensed matter physics I
• Research Institution: Kyoto University
• Principal Investigator: Aruga Tetsuya 京都大学, 理学研究科, 教授 (70184299)
• Co-Investigator(Kenkyū-buntansha): 八田 振一郎 京都大学, 理学研究科, 助教 (70420396)
• Project Period (FY): 2015-04-01 – 2018-03-31
• Keywords: 表面電気伝導 / トポロジカル絶縁体 / 表面相転移

Outline of Final Research Achievements

In this work, we developed a new method of the vacuum growth of Bi2Te3, which is not associated with the contamination of the chamber, and succeeded in layer-by-layer growth of good-quality Bi2Te3. We studied and clarified the correlation between the development of valence electronic structure and the electrical conductivity of the film.
We also studied the electrical conductivity of the (4x1)-In monolayer on Si surface and succeeded in the observation of the precise conductivity change during a phase transition, which enabled us to understand the detailed mechanism of the phase transition which has been under debate for decades. We also measured the temperature dependence of the conductivity of rect-In phase. The adsorption of metal phthalocyanine on the rect-In surface modified greatly the temperature coefficient of the conductivity. We also succeeded in the preparation of the √7 x √3-hex phase and found that this is the single-layer limit of the metallic In phases on Si.

Free Research Field

表面物性化学