2018 Fiscal Year Final Research Report
Development of an extreme environment resistive CCD using silicon carbide
| Project/Area Number |
15H03967
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Saitama University |
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Principal Investigator |
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| Project Period (FY) |
2015-04-01 – 2019-03-31
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| Keywords | 炭化ケイ素(SiC)半導体 / CCD / ガンマ線照射効果 / MOSキャパシタ / 界面準位密度 |
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| Outline of Final Research Achievements |
In this study, I attempt to fabricate a CCD using SiC semiconductors that have high radiation hardness and durability under high temperature circumstances. First of all, basic principles such as a photo-response in SiC MOS capacitor and charge transfer in a MOS capacitor array have been verified. As a result, photo-responses were confirmed from irradiation at UV-green region in cubic SiC substrates as well as at UV region for hexagonal SiC substrates. MOS capacitor arrays were fabricated using photo-lithography, and I for the first time succeeded in charge transfer in SiC semiconductors. Gamma irradiation tests were carried out for SiC and Si MOS capacitors, and it was found that SiC MOS capacitors had about three orders higher gamma-ray durability compared with that of Si.
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| Free Research Field |
半導体結晶工学
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| Academic Significance and Societal Importance of the Research Achievements |
SiC半導体はパワーデバイスへの応用に極めて優れた物性値を有する上、自然酸化膜が良質な絶縁材料であるSiO2であることから、３０年来に亘り世界各地でパワーMOSFETの開発が行われてきた。しかし、耐極限環境半導体のニーズが今よりも低かったためか、Siを置き換えてSiCでCCDを作ろうという発想は、筆者の知る限りこれまで全く無かった。従って、今回初めてSiC-CCDの試作に着手し、原理検証に成功したことになる。また、今回MOSキャパシタで得られた1MGyというガンマ線耐性は、撮像素子としては突出した値である。
本研究を通じて、高い耐放射線性を有するイメージセンサ実現のための道筋を与えたと言える。
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