Low temperature growth of GeSn crystals on insulator and application to high-speed transistors for three dimensional LSI

2017 Fiscal Year Final Research Report

• Project/Area Number: 15H03976
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: Kyushu University
• Principal Investigator: SADOH Taizoh 九州大学, システム情報科学研究院, 准教授 (20274491)
• Project Period (FY): 2015-04-01 – 2018-03-31
• Keywords: 電子・電気材料 / IV族系ヘテロ半導体

Outline of Final Research Achievements

Performance of large-scale integrated circuits has been improved through scaling of the transistors. However, further improvement through the scaling is becoming difficult, due to the short channel effects and propagation delay owing to parasitic resistance and capacitance of metal wiring. For further improvement of performance of the large-scale integrated circuits, it is useful to integrate high-speed transistors and optical interconnection, consisting of a novel material GeSn with superior electronic and optical properties compared with Si, on Si-based large-scale integrated circuits and build three-dimensional large-scale integrated circuits. To achieve this, in the present study, techniques to obtain high quality GeSn on insulator at low temperatures have been developed.

Free Research Field

工学