Improvement of SiC photonic crystals

2017 Fiscal Year Final Research Report

• Project/Area Number: 15H03993
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electron device/Electronic equipment
• Research Institution: Kyoto University
• Principal Investigator: Asano Takashi 京都大学, 工学研究科, 准教授 (30332729)
• Research Collaborator: SONG Bong-Shik 成均館大学, 電子電機工学部, 教授
• Project Period (FY): 2015-04-01 – 2018-03-31
• Keywords: シリコンカーバイド / フォトニック結晶 / ナノ光デバイス / 光共振器 / 光非線形効果

Outline of Final Research Achievements

We have improved the optical loss of SiC photonic crystals, which are expected to overcome the issues in Si photonic crystals such as suppression of two-photon absorption, operation at visible range, etc. We have found that thin film SiC of SiC on insulator substrate has linear absorption loss originates from the fabrication process, and proposed a fabrication method to avoid this issue. As a result, a low-loss SiC photonic crystal nanocavity with a Q factor of 300 thousand has been realized, which means that optical loss has been suppressed to be less than 1/30 of the value before this research. Enhancement of optical nonlinearity based on a high-Q SiC nanocavity has been also investigated, and high normalized second harmonic conversion efficiency of 1400%/W has been observed.

Free Research Field

光ナノデバイス