Development of anion-doped oxide epitaxy

2017 Fiscal Year Final Research Report

• Project/Area Number: 15H05424
• Research Category: Grant-in-Aid for Young Scientists (A)
• Allocation Type: Single-year Grants
• Research Field: Thin film/Surface and interfacial physical properties
• Research Institution: The University of Tokyo
• Principal Investigator: Chikamatsu Akira 東京大学, 大学院理学系研究科(理学部), 助教 (40528048)
• Project Period (FY): 2015-04-01 – 2018-03-31
• Keywords: 複合アニオン / エピタキシャル薄膜

Outline of Final Research Achievements

I developed new thin-film growth techniques of mixed-anion transition metal oxides by combining pulsed-laser deposition and topotactic synthesis methods. In this study, I succeeded in creating some new mixed-anion oxide films and mixed-anion oxide/oxide heterostructures by these methods. Anion-doping oxide epitaxy is an effective way to search for new functionalities and new phenomena in mixed-anion transition metal oxides.

Free Research Field

固体化学