Study for the optical gain and the lasing characteristics of high-Q nanocavity-based silicon Raman laser

2017 Fiscal Year Final Research Report

• Project/Area Number: 15H05428
• Research Category: Grant-in-Aid for Young Scientists (A)
• Allocation Type: Single-year Grants
• Research Field: Optical engineering, Photon science
• Research Institution: Osaka Prefecture University
• Principal Investigator: Takahashi Yasushi 大阪府立大学, 工学(系)研究科(研究院), 准教授 (20512809)
• Research Collaborator: NODA SUSUMU 京都大学, 工学研究科, 教授 (10208358) ; KANEMITSU YOSHIHIKO 京都大学, 化学研究所, 教授 (30185954) ; ASANO TAKASHI 京都大学, 工学研究科, 准教授 (30332729) ; OKANO MAKOTO 産業技術総合研究所, エレクトロニクス・製造領域, 主任研究員 (10443178) ; IHARA TOSHIYUKI 京都大学, 化学研究所, 助教 (10619860)
• Project Period (FY): 2015-04-01 – 2018-03-31
• Keywords: シリコンラマンレーザー / フォトニック結晶 / 高Q値ナノ共振器 / 誘導ラマン散乱 / 微細加工 / 顕微分光

Outline of Final Research Achievements

The realization of silicon-based lasers will be important for the energy-saving human lives. In this project, the lasing mechanism for high-Q nanocavity-based Raman silicon laser was studied using the well-developed nano-fabrication technique and microscopic spectroscopy. We found that the dynamical resonance wavelength shift cause a detrimental effect for the laser performances. In addition, we developed a novel technique to investigate the excitation-wavelength dependence of the optical gain. We also measured the frequency difference, operating wavelength dependence, and temperature dependence. Based on these findings, structural improvement was added and as a result, the production yield and output power was increased.

Free Research Field

シリコンフォトニクス