Study on defect distribution and resistive switching behaviors of Si oxide thin films

2017 Fiscal Year Final Research Report

• Project/Area Number: 15H05520
• Research Category: Grant-in-Aid for Young Scientists (A)
• Allocation Type: Single-year Grants
• Research Field: Electronic materials/Electric materials
• Research Institution: Nagoya University
• Principal Investigator: Ohta Akio 名古屋大学, 工学研究科, 助教 (10553620)
• Project Period (FY): 2015-04-01 – 2018-03-31
• Keywords: 光電子収率分光 / 電子状態 / 欠陥準位計測 / 不揮発性メモリ

Outline of Final Research Achievements

Resistive random access memories have been attracting much attention because of their potential as nonvolatile memory devices owing to the simplicity of their structure, low power consumption, high scalability, and fast response. Si oxides attracted our particular interest, because of their good compatibility with the current Si-ULSI technology. In this study, defect distribution and resistive switching behaviors of Si rich oxide has been studied. We have successfully developed the total photoelectron yield spectroscopy system with wide measurement energy range from ~3 eV to ~10 eV, whicn enables us us to evaluate the energy distribution of filled electronic states in the bandgap of Si oxide with a high enough sensitivity. And also, improvement of resistive swiching behaviors of Si oxide by embedding of Ti nanodots have been demonstrated.

Free Research Field

半導体工学