Electronic property control of solid-state oxide thin-film device by water electrolysis

2017 Fiscal Year Final Research Report

• Project/Area Number: 15H05543
• Research Category: Grant-in-Aid for Young Scientists (A)
• Allocation Type: Single-year Grants
• Research Field: Inorganic materials/Physical properties
• Research Institution: Tokyo Institute of Technology (2017); Hokkaido University (2015-2016)
• Principal Investigator: KATASE TAKAYOSHI 東京工業大学, 科学技術創成研究院, 准教授 (90648388)
• Project Period (FY): 2015-04-01 – 2018-03-31
• Keywords: 薄膜トランジスタ / プロトン / 水の電気分解 / エレクトロクロミック素子

Outline of Final Research Achievements

On-demand electronic property control of oxide thin films was demonstrated by using an all-solid-state thin-film transistor (TFT) structure with water-electrolysis. The TFT structure was fabricated on vanadium dioxide (VO2) channel with a gate insulator of water-infiltrated nanoporous glass. Alternative positive/negative gate-voltage applications induced the reversible protonation/deprotonation of VO2 channel, leading to reversible metal-insulator conversion at room temperature. The TFT structure was applied for VO2 polycrystalline film on glass substrate and it is succeeded to demonstrate the electrochromic device that reversibly modulates from infrared (IR) transparent insulator to IR opaque metal state. The present device is operable by the room-temperature protonation in all-solid-state structure, and thus this concept will provide a new approach for the development of new functional devices.

Free Research Field

酸化物エレクトロニクス