2019 Fiscal Year Final Research Report
Achievement of Tailor-made Lighting Sources by the Control of Nanoscopic Carrier Localization in Nitride Semiconductors
| Project/Area Number |
15H05732
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| Research Category |
Grant-in-Aid for Scientific Research (S)
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| Allocation Type | Single-year Grants |
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| Research Field |
Crystal engineering
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| Research Institution | Kyoto University |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
船戸 充 京都大学, 工学研究科, 准教授 (70240827)
石井 良太 京都大学, 工学研究科, 助教 (60737047)
岡本 晃一 大阪府立大学, 工学(系)研究科(研究院), 教授 (50467453)
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| Project Period (FY) |
2015-05-29 – 2020-03-31
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| Keywords | 新機能発光デバイス / 半導体3次元構造 |
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| Outline of Final Research Achievements |
As an InGaN-based multicolor light emitting structure that covers the visible region, we have succeeded in fabricating a polar face-free multifacet structure on a semipolar GaN template and realized multicolor light emission. In addition, the evaluation of the emission dynamics confirmed that all emission components have higher radiative recombination probability than that from the (0001) polar plane, demonstrating the suppression of the polarization-induced electric field. In addition, we succeeded in forming a pn junction on each crystal facet of the multi-facet structure, and succeeded in prototyping a multi-colored light emitting diode (LED) including white color. Furthermore, as an AlGaN-based polychromatic structure, we achieved in obtaining the three-dimensional structure, by employing the regrowth on an AlN/sapphire template with striped grooves. We succeeded in prototyping a multi-wavelength LED in the deep ultraviolet region based on this technique.
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| Free Research Field |
光材料物性工学分野
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| Academic Significance and Societal Importance of the Research Achievements |
(Al,Ga,In)N系半導体におけるナノ・マイクロ構造中から，任意の波長を高効率で発光させるための技術や基礎光物性評価は，光材料物性の学理構築に貢献する．また，試作された発光素子は，高い演色制御が求められる次世代のテーラーメイド照明，ウイルスの不活性化や微細加工技術として期待される深紫外フォトニクス，さらには情報を光の上に乗せて通信する第6世代の高速光通信（Li-Fi応用）に貢献するものである．
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