Development of digital etching of 2D layered materials using the inward plasma method

2016 Fiscal Year Final Research Report

• Project/Area Number: 15K13310
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Nanomaterials engineering
• Research Institution: National Institute of Advanced Industrial Science and Technology
• Principal Investigator: Miyawaki Jun 国立研究開発法人産業技術総合研究所, ナノ材料研究部門, 主任研究員 (20358138)
• Project Period (FY): 2015-04-01 – 2017-03-31
• Keywords: 二次元層状物質 / プラズマ / エッチング

Outline of Final Research Achievements

Two-dimensional layered materials, such as graphene and transition metal chalcogenides, have recently attracted much attention as materials for next-generation nano-electronic devices. Such materials usually perform novel functions when fabricated as atomically flat mono- or a few- layer samples. For fabrication of electronic devices, it is thus essential to control their thickness with layer-by-layer manners. We have attempted to develop a digital-etching technique of such materials by using our novel inward-plasma technique. For molybdenum disulfide, terrace region with micrometer order was fabricated, which may be used for electronic devices in the lab.

Free Research Field

プラズマ加工・モニタリング