Epitaxial growth of thee-dimensional periodic structure consisting of single crystal (Fostering Joint International Research)

2017 Fiscal Year Final Research Report

• Project/Area Number: 15KK0205
• Research Category: Fund for the Promotion of Joint International Research (Fostering Joint International Research)
• Allocation Type: Multi-year Fund
• Research Field: Inorganic materials/Physical properties
• Research Institution: Kyoto University
• Principal Investigator: Miyake Masao 京都大学, エネルギー科学研究科, 准教授 (60361648)
• Research Collaborator: Braun Paul V. イリノイ大学, アーバナ-シャンペーン校・Materials Science and Engineering, 教授
• Project Period (FY): 2016 – 2017
• Keywords: エピタキシャル成長 / フォトニック結晶 / ナノポーラス / 多孔質

Outline of Final Research Achievements

Researches on attempting to acquire various novel functionality such as enhanced reactivity by forming a nanoporous structure of semiconductor materials have been conducted. However, most of the conventional methods for the preparation of porous materials can only produce materials composed of polycrystalline or amorphous materials. Because the defect density of such materials is high, optical an electrical properties are not good enough to realize a device with high performance. In this study, we developed a technique to fabricate three dimensional nanoporous material consisting of a single crystal semiconductor.

Free Research Field

材料プロセス科学