Research on Radiation-Hardened CMOS Integrated Circuits using Wide Bandgap SiC Semiconductor(Fostering Joint International Research)

2017 Fiscal Year Final Research Report

• Project/Area Number: 15KK0240
• Research Category: Fund for the Promotion of Joint International Research (Fostering Joint International Research)
• Allocation Type: Multi-year Fund
• Research Field: Electron device/Electronic equipment
• Research Institution: Hiroshima University
• Principal Investigator: Kuroki Shin-Ichiro 広島大学, ナノデバイス・バイオ融合科学研究所, 准教授 (70400281)
• Research Collaborator: Zetterling Carl-Mikael KTH Royal Institute of Technology, School of Information and Communication Technology, Prof. ; Östling Mikael スウェーデン王立工科大学, School of Information and Communication Technology, Prof.
• Project Period (FY): 2016 – 2017
• Keywords: 極限環境エレクトロニクス / シリコンカーバイド / CMOS集積回路 / MOSFETs / 耐放射線 / 高温動作 / 廃炉技術

Outline of Final Research Achievements

For the decommissioning of the Fukushima Daiichi Nuclear Power Plant in Japan, installation of robots has been promoted. However the electronics are mainly consist of conventional silicon integrated circuits, which is vulnerable to radiation. And then the electronics limits the operation time for the decommissioning. For the radiation hardened electronics, we need to apply other semiconductor with radiation hardness. 4H-SiC semiconductor is one of the candidates for such a material. In this research project, we promoted research and developments on 4H-SiC MOSFET devices and integrated circuits, research for high performance, and for harsh environment applications, under the international collaboration.

Free Research Field

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