2007 Fiscal Year Final Research Report Summary
Eigh efficiency solar energy conversion by nano-structured InGaN semiconductor photoelectrode
Project/Area Number |
16310085
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Research Category |
Grant-in-Aid for Scientific Research (B)
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Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Nanomaterials/Nanobioscience
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Research Institution | The University of Electro-Communications |
Principal Investigator |
KOBAYASHI Naoki The University of Electro-Communications, Faculty of Applied Physics and Chemistry, Professor (10361825)
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Project Period (FY) |
2004 – 2007
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Keywords | water photolysis / energy resource of hydrogen / semiconductor photoelectrode / nitride semiconductors / gallium nitride / indium gallium nitride / solar energy |
Research Abstract |
Hydrogen was evolved at a zero bias when a p-type GaN cathode in an electrolyte solution is irradiated with UV light, although both hydrogen evolution rate and photocurrent decrease during irradiation. Spontaneous hydrogen evolution indicates that the conduction band-edge of p-GaN is above the reduction potential of H+(aq). From the relationship between the volume of generated hydrogen and the amount of electrons traveling from the Pt anode to the p-GaN cathode, the reaction efficiency of electrons injected from the conduction band of the p-GaN cathode with H+(aq) in a neutral Na2SO4 electrolyte solution is larger than 70%. As a result, the overall quantum efficiency for the hydrogen generation before degradation is estimated to be 4-6% at a wavelength of 340 nm by considering the incident photon-to-current efficiency of p-GaN. We also studied the electron transport between InGaN and electrolyte solution by using cyclic voltammetry, compared with Pt, Ti02/FTO (Fluorine-doped Tin Oxide glass). The forward and reverse reactions of H2→2H+ + 2e occurred at Pt and TiO2/FTO electrodes. In contrast, in GaN and In0.12Ga0.88N electrodes, only forward reaction occured and no reserve reaction of H2→2H+ + 2e was observed. These results show that GaN and In0.12Ga0.88N have higher comduction band-edge potentials than the reduction potential of H+ (aq) in water. Moreover, we observed cathodic photocurrent with p-In0.12Ga0.88N electrode under 405nm visible light irradiation in Na2SO4 solution and H2 bubbles on electrode surface were in-situ detected by monitoring the scattered light intensity.
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[Journal Article] p-GaN cathode degradation correlated with hydrogen passivation during water photolysis under uv light2007
Author(s)
D., Takagi, T., Narumi, N., Kobayashi, J., Yamamoto, Y., Ban, K., Wakao
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Journal Title
Jpn. J. Appl. Phys Vol. 46
Pages: 572-573
Description
「研究成果報告書概要(欧文)」より
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[Journal Article] Minority carrier diffusion lengths in MOVPE-grown-p-InGaN and performance of AlGaN/InGaN/GaN double heterojunction bipolar transistors2007
Author(s)
K., Kumakura, T., Makimoto, N., Kobayashi, T., Hashizume, T., Fukui, H., Hasegawa
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Journal Title
J. Cryst. Growth Vol. 298
Pages: 787-790
Description
「研究成果報告書概要(欧文)」より
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[Presentation] Electron transport at InGaN/electrolyte interface and its application to water photolysis using visible light2007
Author(s)
S., Usui, T., Narumi, J., Tokue, N., Kobayashi, J., Yamamoto, Y., Ban, K., Wakao
Organizer
the Int. Conf. on SSDM, Tsukuba
Year and Date
20070000
Description
「研究成果報告書概要(欧文)」より
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